Structural Comparisons of SiOx and Si/SiOx Formed by Passivation of Single-Crystal Silicon by Atomic and Molecular Oxygen

2003 ◽  
Vol 786 ◽  
Author(s):  
Maja Kisa ◽  
Ray D. Twesten ◽  
Judith C. Yang
Keyword(s):  
Single Crystal ◽  
Molecular Oxygen ◽  
Atomic Oxygen ◽  
Random Distribution ◽  
Structural Characteristics ◽  
Single Crystal Silicon ◽  
Silica Layer ◽  
Crystal Silicon ◽  
Selected Area Electron Diffraction ◽  
Oxygen Gas

ABSTRACTThe structural characteristics of a silica layer and Si/SiO2 interface formed on Si single-crystal by oxidation in hyperthermal atomic oxygen (AO) and molecular oxygen (MO) at 493K were compared by wide variety of experimental techniques. The hyperthermal AO with kinetic energy of 5.1eV was created by the pulsed laser detonation of oxygen gas. The oxide formed by AO and MO on Si single crystal is amorphous as observed by HRTEM and selected area electron diffraction (SAED). However, the oxide formed by AO has a less random distribution of silicon and oxygen atoms as compared to the oxide formed by MO, as evidenced by the SAED patterns and EELS spectra. In contrast to MO formed silica, initial EELS results across the Si/SiO2 interface revealed no region of suboxides exists near the interface in the AO formed silica. The Si/SiO2 interface formed by AO species was found to be very abrupt and the oxide homogeneous, as opposed to the broad interface and non-homogeneous oxide created by MO, as determined by HRTEM and EELS.

Increased Ordering in the Amorphous SiOx due to Hyperthermal Atomic Oxygen.

2004 ◽  
Vol 851 ◽  
Author(s):  
Maja Kisa ◽  
William G. Stratton ◽  
Timothy K. Minton ◽  
Klaus van Benthem ◽  
Steve J. Pennycook ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Diffraction Pattern ◽  
Molecular Oxygen ◽  
Atomic Oxygen ◽  
Structural Characteristics ◽  
Silica Layer ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Resolution Electron ◽  
Electron Energy Loss

ABSTRACTWe had studied the effects of hyperthermal (5.1eV) atomic oxygen (AO) on the structural characteristics of the silica layer and Si/SiOx interface formed by the oxidation of Si-single crystal by a variety of microcharacterization techniques. A laser detonation source was used to produce atomic oxygen with 5.1eV kinetic energy. High Resolution Transmission Electron Microscopy (HRTEM) and Selected Area Electron Diffraction (SAED) demonstrated that the silica layer formed on Si(100) by atomic oxygen is thicker, more homogeneous, and less amorphous, compared to the oxide layer created by molecular oxygen (MO). High spatial resolution Electron Energy Loss Spectroscopy (EELS) study confirmed that the Si/SiOx interface created by atomic oxygen is abrupt containing no suboxides as opposed to the broad interface with transitional states formed by molecular oxygen. SAED technique was used to observe sharper diffraction rings present in the diffraction pattern of Si(100) oxidized by reactive atomic oxygen as opposed to the diffused haloes present in the diffraction pattern of Si(100) oxidized by molecular oxygen. Radial Distribution Function (RDF) analyses were performed on the SAED patterns of Si(100) oxidized in atomic and molecular oxygen, indicating that a more ordered oxide is formed by atomic oxygen. Initial Fluctuation Electron Microscopy (FEM) results confirmed an increased medium range ordering in SiOx formed by atomic oxygen when compared to the non-regular arrangement present in the amorphous oxide formed by the oxidation of Si(100) in molecular oxygen.

Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
Author(s):  
Kei Kitamura ◽  
Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Effective Action ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Pressure Oxygen ◽  
Gas Atmosphere ◽  
High Pressure Oxygen ◽  
Oxygen Gas ◽  
Basic Characteristics

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

A Structural Comparison of Si(100) Oxidized by Atomic and Molecular Oxygen

2002 ◽  
Vol 751 ◽  
Author(s):  
Maja Randjelovic ◽  
Judith C. Yang
Keyword(s):  
Electron Microscopy ◽  
Molecular Oxygen ◽  
Photoelectron Spectroscopy ◽  
Atomic Oxygen ◽  
Rutherford Backscattering Spectrometry ◽  
Structural Characteristics ◽  
Silica Layer ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Detonation Method

ABSTRACTWe compared the structural characteristics of a silica layer formed on Si(100) by oxidation in hyperthermal atomic oxygen and molecular oxygen at 493K. The laser detonation method was used to create primarily neutral atomic oxygen with kinetic energy of 5.1eV. The silicon oxides were characterized by High Resolution Transmission Electron Microscopy (HRTEM), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS), Scanning Electron Microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS). We determined that atomic oxygen forms amorphous silica that is almost twice as thick and nearly double the surface roughness as compared to molecular oxygen - formed silica at the same temperature and time conditions.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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