Structural, Electrical and Magnetic Investigations of Conductive ZnO: Co Thin Films Deposited by DC Reactive Magnetron Co-Sputtering

2013 ◽  
Vol 543 ◽  
pp. 251-254 ◽  
Author(s):  
Soumia Lardjane ◽  
Mohammad Arab Pour Yazdi ◽  
Noureddine Fenineche ◽  
G. Merad ◽  
H.I. Feraoun ◽  
...  
Keyword(s):  
High Pressure ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Antiferromagnetic Interaction ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Diluted Magnetic ◽  
Free Spins

Zn1-xCoxO (0 < x < 14.6) diluted magnetic semiconductor coatings have been obtained by reactive DC magnetron sputtering of metallic Zn and Co targets at high pressure and high temperature. The coatings structural properties have been investigated by X-ray diffraction. All as-deposited coatings are crystalized in ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected in the films. The temperature dependence of the magnetization shows a paramagnetic Curie-Weiss behavior with antiferromagnetic interaction due to the associated spins and simple paramagnetic curie behavior of isolated free spins.

scholarly journals Dilute Magnetic SemiconductorCu2FeSnS4Nanocrystals with a Novel Zincblende Structure

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Xiaolu Liang ◽  
Xianhua Wei ◽  
Daocheng Pan
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Nir Absorption ◽  
Diluted Magnetic ◽  
Average Size

Diluted magnetic semiconductorCu2FeSnS4nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

Preparation of Bulk Polycrystalline MnGexSby (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

2015 ◽  
Vol 760 ◽  
pp. 329-334
Author(s):  
Madalin Ion Rusu ◽  
Daniel Tenciu ◽  
Nicolae Catalin Zoita ◽  
Roger Notonier ◽  
Alain Tonetto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Preparation Method ◽  
Diluted Magnetic Semiconductor ◽  
Bulk Material ◽  
Magnetic Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diluted Magnetic ◽  
Scanning Electron

Bulk polycrystalline MnGexSby materials doped with Co or Fe were prepared and investigated with the aim of obtaining new diluted magnetic semiconductor (DMS) materials. An innovative preparation method was also established. Investigation techniques like X-ray diffraction (XRD), Raman scattering, and scanning electron microscopy (SEM) associated with energy dispersive X-ray analysis (EDX) have been employed to derive the structural properties and the composition of the bulk material.

scholarly journals X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies of Zn1-xCoxS Diluted Magnetic Semiconductor Crystals

1993 ◽  
Vol 84 (4) ◽  
pp. 633-636 ◽  
Author(s):  
K. Ławniczak-Jabłońska ◽  
Z. Gołacki ◽  
W. Paszkowicz ◽  
R.J. Iwanowski ◽  
L.S. Johansson ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Crystals ◽  
Diluted Magnetic

Preparation and Characterization of Cobalt Doped ZnO and TiO2

2002 ◽  
Vol 722 ◽  
Author(s):  
Shaoguang Yang ◽  
Silas T. Hung ◽  
Herman H.Y. Sung ◽  
A.B. Pakhomov ◽  
C.Y. Wong
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
X Ray ◽  
Doped Zno ◽  
Diluted Magnetic ◽  
Co Doped

AbstractSynthesis and characterization of transparent Co-doped ZnO and TiO2 diluted magnetic semiconductor (DMS) films are described. The films are prepared by single sputtering deposition. They are ferromagnetic at temperatures as high as 350 K. The films were characterized by X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), X-ray fluorescence (XRF). Optical transparency was measured on UV/VIS spectrometer. The Codoped ZnO films had wurtzite structure similar to ZnO with the (002) preferential texture. Neither XRD nor XPS showed any presence of pure Co or CoO in the samples. The Co-doped TiO2 samples were amorphous, and some unoxidized Co was found in the films.

Structural and Optical Properties of ZnCoO Thin Film Prepared by Electrodeposition

2013 ◽  
Vol 781-784 ◽  
pp. 323-326 ◽  
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cathodic Electrodeposition ◽  
Uv Emission ◽  
Diluted Magnetic ◽  
Zno Crystal ◽  
Zn Ions

An oxide diluted magnetic semiconductor, Co doped ZnO thin film was successfully fabricated by cathodic electrodeposition method. X-ray diffraction studies demonstrate that the ZnCoO thin film indicates that the wurtzite structure. X-ray photospectroscopy studies suggested Co ions have a chemical valence of 2+. Optical absorption spectrum further confirmed Co ions have been doped into ZnO crystal lattice successfully with substituting positions of Zn ions. In photoluminescence spectrum, the UV emission band shifted to low energy side because of the doping effect.

The impact of hydrogenation conditions on the physical properties of the degenerated Ni/Al co-doped diluted magnetic semiconductor anatase nanoparticles

2021 ◽  
Vol 11 ◽  
Author(s):  
A. A. Dakhel
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Precipitation Method ◽  
Optical Absorption Spectroscopy ◽  
X Ray Diffraction ◽  
Ferromagnetic Properties ◽  
Anatase Nanoparticles ◽  
Diluted Magnetic ◽  
The Impact ◽  
Co Doped

: Anatase (TiO2) nanoparticles co-doped with Ni/Al ions were synthesized by a thermo-precipitation method. The samples were characterized by using X‐Ray diffraction and optical absorption spectroscopy. The structural/optical investigations established the development of substitutional solid solutions: TiO2:Ni:Al. The magnetization investigations were performed to study the generated stable ferromagnetic properties of the samples due to the Ni2+ doping. To boost the created ferromagnetic properties, Al ions co-dopings were employed to supply/densify the itinerant electrons. It was planned to decide the suitable hydrogenation conditions and temperature (TH), which are necessary to create appreciable strength of ferromagnetic properties in the host co-doped samples based on TiO2 for practical uses. The results established that the ferromagnetic energy (Umag) was increased by ~240% and the saturation magnetization by ~140% with increasing of TH from 400 oC to 500oC. The obtained Msat was higher by ~50 times than that previously attained for Ni-doped TiO2. Such novel results were discussed and explained through the spin-spin Heisenberg interactions.

Correlation of Surface Morphologies with Mn Compositions of Ga1-xMnxAs Epilayers Grown by Liquid Phase Epitaxy

2002 ◽  
Vol 719 ◽  
Author(s):  
Hwa-Mok Kim ◽  
Jae-Hyeon Leem ◽  
Sung Woo Choi ◽  
Deuk Young Kim ◽  
Tae-Won Kang
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Mixed Solvent ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Energy Dispersive ◽  
Surface Layers ◽  
X Ray ◽  
Diluted Magnetic ◽  
Surface Morphologies

AbstractIn this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga1-xMnxAs epilayers - a III-V diluted magnetic semiconductor - grown by liquid phase epitaxy (LPE). Ga1-xMnxAs epilayers were grown at 595 °C from 50 % Ga + 50 % Bi mixed solvent. The grown layers were characterized by energy dispersive x-ray analysis (EDS) and atomic forced microscopy (AFM). The Mn composition measured by EDS after growth process was varied from 1 to 7 %. As increasing Mn composition surface morphologies of as-grown Ga1-xMnxAs epilayers were varied. At higher Mn compositions, the morphology of the surface layers degrades strongly, preventing removal of the solution-melt from it. Key words: LPE, as-grown, surface morphology, Mn composition, Ga1-xMnxAs, energy-dispersive x-ray analysis (EDS), atomic forced microscopy (AFM).

Hydrothermal Synthesis of Diluted Magnetic Zn1-xMnxO Semiconductor

2013 ◽  
Vol 313-314 ◽  
pp. 184-187
Author(s):  
Wen Li Zheng ◽  
Wei Yang
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Curie Temperature ◽  
Fill Factor ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Height Ratio ◽  
Atom Concentration ◽  
X Ray ◽  
Diluted Magnetic

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 },pfaces{ 011} and–pfaces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

Three-Dimensional Atomic Image around Mn Atoms in Diluted Magnetic Semiconductor Zn0.4Mn0.6Te Obtained by X-Ray Fluorescence Holography

2005 ◽  
Vol 44 (2) ◽  
pp. 1011-1012 ◽  
Author(s):  
Shinya Hosokawa ◽  
Naohisa Happo ◽  
Koichi Hayashi ◽  
Yukio Takahashi ◽  
Tōru Ozaki ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Three Dimensional ◽  
Magnetic Semiconductor ◽  
X Ray ◽  
Diluted Magnetic ◽  
Atomic Image
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