Three-dimensional structural image of Zn0.4Mn0.6Te diluted magnetic semiconductor obtained by X-ray fluorescence holography

2007 ◽  
Vol 310 (2) ◽  
pp. 2707-2709 ◽  
Author(s):  
S. Hosokawa ◽  
N. Happo ◽  
K. Hayashi
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Three Dimensional ◽  
Magnetic Semiconductor ◽  
X Ray ◽  
Structural Image ◽  
Diluted Magnetic

Three-Dimensional Atomic Image around Mn Atoms in Diluted Magnetic Semiconductor Zn0.4Mn0.6Te Obtained by X-Ray Fluorescence Holography

2005 ◽  
Vol 44 (2) ◽  
pp. 1011-1012 ◽  
Author(s):  
Shinya Hosokawa ◽  
Naohisa Happo ◽  
Koichi Hayashi ◽  
Yukio Takahashi ◽  
Tōru Ozaki ◽  
...  
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Three Dimensional ◽  
Magnetic Semiconductor ◽  
X Ray ◽  
Diluted Magnetic ◽  
Atomic Image

Correlation of Surface Morphologies with Mn Compositions of Ga1-xMnxAs Epilayers Grown by Liquid Phase Epitaxy

2002 ◽  
Vol 719 ◽  
Author(s):  
Hwa-Mok Kim ◽  
Jae-Hyeon Leem ◽  
Sung Woo Choi ◽  
Deuk Young Kim ◽  
Tae-Won Kang
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Mixed Solvent ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Energy Dispersive ◽  
Surface Layers ◽  
X Ray ◽  
Diluted Magnetic ◽  
Surface Morphologies

AbstractIn this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga1-xMnxAs epilayers - a III-V diluted magnetic semiconductor - grown by liquid phase epitaxy (LPE). Ga1-xMnxAs epilayers were grown at 595 °C from 50 % Ga + 50 % Bi mixed solvent. The grown layers were characterized by energy dispersive x-ray analysis (EDS) and atomic forced microscopy (AFM). The Mn composition measured by EDS after growth process was varied from 1 to 7 %. As increasing Mn composition surface morphologies of as-grown Ga1-xMnxAs epilayers were varied. At higher Mn compositions, the morphology of the surface layers degrades strongly, preventing removal of the solution-melt from it. Key words: LPE, as-grown, surface morphology, Mn composition, Ga1-xMnxAs, energy-dispersive x-ray analysis (EDS), atomic forced microscopy (AFM).

Hydrothermal Synthesis of Diluted Magnetic Zn1-xMnxO Semiconductor

2013 ◽  
Vol 313-314 ◽  
pp. 184-187
Author(s):  
Wen Li Zheng ◽  
Wei Yang
Keyword(s):  
Hydrothermal Synthesis ◽  
Low Temperature ◽  
Curie Temperature ◽  
Fill Factor ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Height Ratio ◽  
Atom Concentration ◽  
X Ray ◽  
Diluted Magnetic

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 },pfaces{ 011} and–pfaces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

scholarly journals Dilute Magnetic SemiconductorCu2FeSnS4Nanocrystals with a Novel Zincblende Structure

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Xiaolu Liang ◽  
Xianhua Wei ◽  
Daocheng Pan
Keyword(s):  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Ferromagnetic Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Nir Absorption ◽  
Diluted Magnetic ◽  
Average Size

Diluted magnetic semiconductorCu2FeSnS4nanocrystals with a novel zincblende structure have been successfully synthesized by a hot-injection approach. Cu+, Fe2+, and Sn4+ions occupy the same position in the zincblende unit cell, and their occupancy possibilities are 1/2, 1/4, and 1/4, respectively. The nanocrystals were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy-dispersive spectroscopy (EDS), and UV-vis-NIR absorption spectroscopy. The nanocrystals have an average size of 7.5 nm and a band gap of 1.1 eV and show a weak ferromagnetic behavior at low temperature.

An Electronic Structure Study of Mn Doped ZnO Diluted Magnetic Semiconductor Using X-Ray Absorption and Photoemission Techniques

2009 ◽  
Vol 155 ◽  
pp. 163-172
Author(s):  
R.K. Singhal ◽  
M.S. Dhawan ◽  
S.K. Gaur ◽  
Elisa Saitovitch
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Transition Metal Ions ◽  
X Ray ◽  
Two Samples ◽  
Diluted Magnetic ◽  
X Ray Absorption

ZnO semiconductor doped with a few per cent of some transition metal ions can exhibit above room temperature ferromagnetism, transforming it into a very promising candidate for future spin-electronic applications. In the present article we have compared the electronic structure of two polycrystalline ZnMnO pellets doped with diluted Mn concentration (2% and 4%), carefully characterized by SQUID and XRD, including Rietveld refinement. The characterization measurements established that the samples have the ZnO lattice with ZnS type Wurtzite hexagonal symmetry and no detectable impurities. The samples exhibit distinctly different magnetic properties. The 2% sample displayed a clear FM ordering at 300 K while the 4% sample did not show any ordering down to 5K. The electronic structure of these two samples has been investigated using Mn L23 x-ray absorption spectroscopy, Zn 2p and 3p, Mn 3p and O 1s x-ray photoemission spectroscopy. Our aim was to find out how the changes in the electronic structure can correlate to the observed magnetic properties in such diluted magnetic semiconductor materials. The results show that most of the Mn ions of the ferromagnetic sample are in the divalent state. For the higher Mn percent nonmagnetic sample, a larger contribution of higher oxidation Mn states are dominant and the oxygen content also increases. The two factors can be correlated to the suppressed ferromagnetism, though it is hard to pinpoint that which of these two weighs more in the suppression mechanism.

Preparation of Bulk Polycrystalline MnGexSby (x = 0.5-1.0; y = 1.5-2.2) Doped with Co or Fe

2015 ◽  
Vol 760 ◽  
pp. 329-334
Author(s):  
Madalin Ion Rusu ◽  
Daniel Tenciu ◽  
Nicolae Catalin Zoita ◽  
Roger Notonier ◽  
Alain Tonetto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Preparation Method ◽  
Diluted Magnetic Semiconductor ◽  
Bulk Material ◽  
Magnetic Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diluted Magnetic ◽  
Scanning Electron

Bulk polycrystalline MnGexSby materials doped with Co or Fe were prepared and investigated with the aim of obtaining new diluted magnetic semiconductor (DMS) materials. An innovative preparation method was also established. Investigation techniques like X-ray diffraction (XRD), Raman scattering, and scanning electron microscopy (SEM) associated with energy dispersive X-ray analysis (EDX) have been employed to derive the structural properties and the composition of the bulk material.

scholarly journals X-Ray Photoelectron Spectroscopy and X-Ray Diffraction Studies of Zn1-xCoxS Diluted Magnetic Semiconductor Crystals

1993 ◽  
Vol 84 (4) ◽  
pp. 633-636 ◽  
Author(s):  
K. Ławniczak-Jabłońska ◽  
Z. Gołacki ◽  
W. Paszkowicz ◽  
R.J. Iwanowski ◽  
L.S. Johansson ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Semiconductor Crystals ◽  
Diluted Magnetic

Structural, Electrical and Magnetic Investigations of Conductive ZnO: Co Thin Films Deposited by DC Reactive Magnetron Co-Sputtering

2013 ◽  
Vol 543 ◽  
pp. 251-254 ◽  
Author(s):  
Soumia Lardjane ◽  
Mohammad Arab Pour Yazdi ◽  
Noureddine Fenineche ◽  
G. Merad ◽  
H.I. Feraoun ◽  
...  
Keyword(s):  
High Pressure ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Antiferromagnetic Interaction ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Diluted Magnetic ◽  
Free Spins

Zn1-xCoxO (0 < x < 14.6) diluted magnetic semiconductor coatings have been obtained by reactive DC magnetron sputtering of metallic Zn and Co targets at high pressure and high temperature. The coatings structural properties have been investigated by X-ray diffraction. All as-deposited coatings are crystalized in ZnO structure and neither traces of metallic nor oxide Co-rich clusters were detected in the films. The temperature dependence of the magnetization shows a paramagnetic Curie-Weiss behavior with antiferromagnetic interaction due to the associated spins and simple paramagnetic curie behavior of isolated free spins.

Origin and control of room temperature ferromagnetism in Co,Zn-doped SnO2: oxygen vacancies and their local environment

2020 ◽  
Vol 8 (14) ◽  
pp. 4902-4908 ◽  
Author(s):  
Josha Ho ◽  
Tristan de Boer ◽  
Patrick M. Braun ◽  
Brett Leedahl ◽  
Dhamodaran Manikandan ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Diluted Magnetic Semiconductor ◽  
Room Temperature Ferromagnetism ◽  
Magnetic Semiconductor ◽  
Local Environment ◽  
X Ray ◽  
Local Environments ◽  
Semiconductor System ◽  
Diluted Magnetic ◽  
And Control

The local environments of Co and Zn dopants in SnO2, a diluted magnetic semiconductor system, are studied using X-ray spectroscopy and crystal field calculations, yielding evidence that the ferromagnetism is mediated by oxygen vacancies.

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