Planar Defects and Dislocations in C40 and FCC Lattices

2013 ◽  
Vol 592-593 ◽  
pp. 67-70
Author(s):  
Vaclav Paidar
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Planar Defects ◽  
Hexagonal Axis ◽  
Metal Silicides ◽  
Fcc Lattice ◽  
Fourth Position

Atomic planes at three different positions ABC form the stacking along the <111> directions in the FCC lattice and similarly along the <0001> hexagonal axis in the C40 structure in transition metal silicides. However, the structures of silicides are constituted of several stacking of identical atomic planes at four different positions: AB in C11bstructures of e.g. MoSi2, ABC in C40 structures of e.g. VSi2and ABDC in C54 structures of e.g. TiSi2disilicides. The occurrence of the fourth position essentially influences the properties of defects and consequently the mechanical properties of C40 materials.

scholarly journals High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

2021 ◽  
Author(s):  
Ali Sheraz ◽  
Naveed Mehmood ◽  
Mert Mirac Cicek ◽  
İbrahim Ergün ◽  
Hamid Reza Rasouli ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Flexible Electronics ◽  
Transition Metal Dichalcogenides ◽  
High Elasticity ◽  
Metal Dichalcogenides

Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2...

Tribo-mechanical properties of reactive magnetron sputtered transition metal carbide coatings

2017 ◽  
Vol 114 ◽  
pp. 234-244 ◽  
Author(s):  
D. Dinesh Kumar ◽  
N. Kumar ◽  
S. Kalaiselvam ◽  
R. Radhika ◽  
Arul Maximus Rabel ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Transition Metal Carbide ◽  
Reactive Magnetron ◽  
Metal Carbide ◽  
Carbide Coatings

scholarly journals Flame-retardant MXene/Polyimide Film with Outstanding Thermal and Mechanical Properties Based on the Secondary Orientation Strategy

2021 ◽  
Author(s):  
Yue Zhu ◽  
Qingyu Peng ◽  
Haowen Zheng ◽  
Fuhua Xue ◽  
Pengyang Li ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Thermal Conductivity ◽  
Transition Metal ◽  
Mechanical Performance ◽  
Polyimide Film ◽  
Polymeric Films ◽  
Two Dimensional ◽  
Thermal And Mechanical Properties ◽  
Metal Carbides ◽  
Transition Metal Carbides

With the development of multifunction and miniaturization in modern electronics, polymeric films with strong mechanical performance and high thermal conductivity are urgently needed. Two-dimensional transition metal carbides and nitrides (MXenes)...

Theoretical Study of Si-Rich Transition-Metal Silicides with Double-Graphene-Like Structures

2006 ◽  
Vol 958 ◽  
Author(s):  
Takehide Miyazaki ◽  
Toshihiko Kanayama
Keyword(s):  
Transition Metal ◽  
Theoretical Study ◽  
Layer Structure ◽  
Geometry Optimization ◽  
Energy Calculation ◽  
Total Energy Calculation ◽  
Metal Atoms ◽  
Transition Metal Atoms ◽  
Metal Silicides ◽  
Potential Impact

ABSTRACTWe propose a novel form of graphene-like Si nanostructure based on ab initio total-energy calculation and geometry optimization, (MSi12)n, with M being transition metal atom. It has a three-layer structure, where the two layers of Si atoms in graphene-like positions sandwich another layer of transition metal atoms. The electronic structure may become semiconducting or metallic, depending on the choice of M and arrangement of Si atoms. This hypothetical material can be regarded as a Si-rich phase of transition metal silicide. A potential impact of our finding in forthcoming ultra-scaled Si technology is also discussed.

Optical constants of transition-metal silicides

1983 ◽  
Vol 2 (1) ◽  
pp. 31-34 ◽  
Author(s):  
P.A. Heimann ◽  
S.P. Murarka ◽  
J. Rosario
Keyword(s):  
Transition Metal ◽  
Optical Constants ◽  
Metal Silicides

Defect Control and Defect Engineering of Transition-metal Silicides

2006 ◽  
Vol 980 ◽  
Author(s):  
Haruyuki Inui ◽  
Katsushi Tanaka ◽  
Kyosuke Kishida
Keyword(s):  
Transition Metal ◽  
Thermoelectric Properties ◽  
Valence Electron ◽  
Vacancy Concentration ◽  
Relative Magnitude ◽  
Defect Engineering ◽  
Counting Rule ◽  
Substitutional Element ◽  
Metal Silicides ◽  
Defect Control

AbstractThe microstructure, defect structure and thermoelectric properties of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 upon alloying with a substitutional element with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3. As a result, the improvement in the thermoelectric properties and the p- to n-type conduction transition are successfully achieved respectively for these semiconducting transition-metal silicides.

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