Effect of Annealing Atmosphere on the Morphology of Copper Oxide Thin Films Deposited on TiO2 Substrates Prepared by Sol-Gel Process

2013 ◽  
Vol 594-595 ◽  
pp. 113-117 ◽  
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abdul Hamid

Copper oxide films were prepared via sol-gel like spin coating starting from methanolic solutions of cupric chloride onto the TiO2 substrates. Films were obtained by spin coating under room conditions (temperature, 25-30 °C) and were subsequently annealed at different temperatures (200-400 °C) in oxidizing (air) and inert (N2) atmospheres. X-ray diffraction (XRD) patterns showed crystalline phases, which were observed as a function of the annealing conditions. The film composition resulted single or multi-phasic depending on both temperature and atmosphere. The grain size of film was measured using scanning electron microscopy (SEM) and the surface roughness of thin films was characterized by atomic force microscopy (AFM). The grain size of which was annealed in air at 300 °C was 30.39 nm with the surface roughness of 96.16 nm. The effects of annealing atmosphere on the structure and morphology of copper oxide thin films are reported.

2015 ◽  
Vol 819 ◽  
pp. 189-192
Author(s):  
Dewi Suriyani Che Halin ◽  
Ibrahim Abu Talib ◽  
Abdul Razak Daud ◽  
Muhammad Azmi Abd Hamid

Thin films of copper oxide were successively deposited on glass substrates by sol-gel like spin coating for 40 s and annealed in air at different temperatures (200-400°C). Precursor solutions were prepared by dissolving cupric chloride in methanol. Various stabilizers and additives were used to enhance the solubility of cupric chloride and to improve the adhesion between the films and the glass substrates. Glucopone was used as a surfactant to reduce the surface energy. The evolution of oxide coatings under thermal treatment was studied by glancing incidence X-ray diffraction and scanning electron microscopy. Annealing the films in air at 300°C converts the films to CuO. The general appearances of the films were uniform and brownish in color.


2014 ◽  
Vol 11 (2) ◽  
pp. 718-729
Author(s):  
Baghdad Science Journal

Copper oxide thin films were deposited on glass substrate using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The thickness of the thin films was around 0.43?m.Copper oxide thin films were annealed in air at (200, 300 and 400°C for 45min.The film structure properties were characterized by x-ray diffraction (XRD). XRD patterns indicated the presence of polycrystalline CuO. The average grain size is calculated from the X-rays pattern, it is found that the grain size increased with increasing annealing temperature. Optical transmitter microscope (OTM) and atomic force microscope (AFM) was also used. Direct band gap values of 2.2 eV for an annealed sample and (2, 1.5, 1.4) eV at 200, 300,400oC respectively.


Author(s):  
Ibrahim Mohd Yazid ◽  
Muhammad Hazim Raselan ◽  
Shafinaz Sobihana Shariffudin ◽  
Puteri Sarah Mohamad Saad ◽  
Sukreen Hana ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (49) ◽  
pp. 29394-29401
Author(s):  
Chandrasekaran Abinaya ◽  
Kevin Bethke ◽  
Virgil Andrei ◽  
Jonas Baumann ◽  
Beatrix Pollakowski-Herrmann ◽  
...  

This study reveals the interplay between the composition and thermoelectric performance of mixed copper oxide thin films, which can be finely adjusted by varying the annealing atmosphere.


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