TEM Observation and Ionic Conductivity Study of Li2SiO3 Thin-Film on Sapphire Substrate

2013 ◽  
Vol 596 ◽  
pp. 15-20 ◽  
Author(s):  
Shinichi Furusawa ◽  
Takao Tsurui ◽  
Kouhei Shimizu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Ionic Conductivity ◽  
Temperature Dependence ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Temperature Range ◽  
Transmission Electron ◽  
Lithium Ionic Conductor

Thin-film samples of the lithium ionic conductor Li2SiO3(LSO) were deposited on an A-plane sapphire substrate via the pulsed laser deposition (PLD) method, and the irreversible temperature dependence of the ionic conductivity in the thin-film samples was studied. Via transmission electron microscopy (TEM) observations of annealed LSO thin-film, it was found that the as-prepared LSO thin-film was amorphous over the temperature rangeT490 K, and that nanocrystals existed in the annealed LSO thin-film in the temperature rangeT550 K. Further more, it was clarified the irreversible temperature dependence of the ionic conductivity is due to the generation of nanocrystals.

Synthesis and Characterization of Metal-Ceramic Thin Film Nanocomposites With Improved Mechanical Properties

2002 ◽  
Author(s):  
D. Kumar ◽  
N. Sudhir ◽  
S. Yarmolenko ◽  
Q. Wei ◽  
J. Sankar ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Thin Film Composites ◽  
Film Composites

Thin films composite materials consisting of metallic nanocrystals embedded in an insulator host have been synthesized using alternating-target pulsed laser deposition of Fe/Ni and Al2O3. The evaluation of structural quality of the thin film composites using high resolution transmission electron microscopy and scanning transmission electron microscopy with atomic number contrast has revealed the formation of a biphase system with thermodynamically driven segregation of Ni and alumina during pulsed laser deposition. The best hardness values of the thin film composites, measured using nanoindentation techniques, was found to 20–30% larger than pure alumina films fabricated under identical conditions. The improvement in values of hardness of Al2O3 thin films by embedding metal nanocrystals is related to the evolution of a microstructure which efficiently hinders the manipulation and movement of dislocation and the growth of microcracks, which in turn, is achieved by grain boundary hardening.

Lattice Defects in Epitaxial Ba2Bi4Ti5O18 Thin Films Grown by Pulsed Laser Deposition Onto LaNiO3 Bottom Electrodes

2000 ◽  
Vol 623 ◽  
Author(s):  
N.D. Zakharov ◽  
A.R. James ◽  
A. Pignolet ◽  
S. Senz ◽  
D. Hesse
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Stacking Sequence ◽  
Rectangular Shape ◽  
Transmission Electron ◽  
Single Well ◽  
New Type

AbstractEpitaxial, ferroelectric Ba2Bi4Ti5O18 films grown on LaNiO3/CeO2/ZrO2:Y2O3 epitaxial layers on Si(100) are investigated by cross-section high-resolution transmission electron microscopy (HRTEM). The films are perfectly oriented and consist of well-developed grains of rectangular shape. The grain boundaries are strained and contain many defects, especially a new type of defect, which can be described as a staircase formed by repeated lattice shifts of Δ ∼ c/12 ∼ 4.2 Å in the [001] direction. This repeated shift results in seemingly bent ribbons of stacked Bi2O2 planes, involving, however, individual Bi2O2 planes which remain strongly parallel to the (001) plane. These defects contain an excess of bismuth. Other defects found in the grain interior include mistakes in the stacking sequence originating from the presence of single, well-oriented, non-stoichionietric layers intergrown with the stoichiometric Ba2Bi4Ti5O18 film matrix.

Growth of TiN/AlN Superlattice by Pulsed Laser Deposition

2002 ◽  
Vol 750 ◽  
Author(s):  
H. Wang ◽  
A. Gupta ◽  
Ashutosh Tiwari ◽  
X. Zhang ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
High Speed ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Internal Stresses ◽  
Layer By Layer ◽  
Special Configuration ◽  
Transmission Electron

ABSTRACTTiN-AlN binary-components have attracted a lot of interests in coatings of high speed cutting tools, due to their higher oxidation resistance, higher hardness, lower internal stresses and better adhesion. Especially, nanometer-scale multilayer structures of AlN/TiN show superior structural and mechanical properties due to their tremendous interface area and become one of the promising candidates for superhard coatings. Here we present a novel method to grow highly aligned TiN/AlN superlattice by pulsed laser deposition. In this method TiN and AlN targets are arranged in a special configuration that they can be ablated in sequence, giving alternate layer by layer growth of TiN(1nm)/AlN(4nm). X-ray diffraction and transmission electron microscopy (TEM) analysis showed the structure to be cubic for both TiN and AlN in the nanoscale multilayers. Microstructure and uniformity for the superlattice structure were studied by TEM and Scanning transmission electron microscopy with Z-contrast (STEM). Nanoindentation results indicated a higher hardness for this new structure than pure AlN and rule-of-mixtures value. Four point probe electrical resistivity measurements showed overall insulating behavior.

(111)p microtwinning in SrRuO3 thin films on (001)p LaAlO3

2009 ◽  
Vol 65 (6) ◽  
pp. 694-698 ◽  
Author(s):  
Y. Han ◽  
I. M. Reaney ◽  
D. S. Tinberg ◽  
S. Trolier-McKinstry
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Orientation Relationship ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Zone Axis ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diffraction Patterns

SrRuO3 (SRO) thin films grown on (001)p (p = pseudocubic) oriented LaAlO3 (LAO) by pulsed laser deposition have been characterized using transmission electron microscopy. Observations along the 〈100〉p directions suggests that although the SRO layer maintains a pseudocube-to-pseudocube orientation relationship with the underlying LAO substrate, it has a ferroelastic domain structure associated with a transformation on cooling to room temperature to an orthorhombic Pbnm phase (a − a − c + Glazer tilt system). In addition, extra diffraction spots located at ±1/6(ooo)p and ±1/3(ooo)p (where `o' indicates an index with an odd number) positions were obtained in 〈110〉p zone-axis diffraction patterns. These were attributed to the existence of high-density twins on {111}p pseudocubic planes within the SrRuO3 films rather than to more conventional mechanisms for the generation of superstructure reflections.

Pulsed laser deposition of ilmenite FeTiO 3 epitaxial thin film onto sapphire substrate

1999 ◽  
Vol 339 (1-2) ◽  
pp. 114-116 ◽  
Author(s):  
Zhongning Dai ◽  
Peiran Zhu ◽  
Shunya Yamamoto ◽  
Atsumi Miyashita ◽  
Kazumasa Narum ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Sapphire Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Film

Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

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