High-Speed Deposition of SiC Thick Film by Halide Precursor

2014 ◽  
Vol 616 ◽  
pp. 37-42 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thick Film ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
High Speed ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Graphite Substrate ◽  
Deposition Effect

Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 ڌ̽˰̸−1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.

Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

2014 ◽  
Vol 936 ◽  
pp. 264-268
Author(s):  
Hua Cheng ◽  
Yong Chan Qian ◽  
Jun Xue
Keyword(s):  
Deposition Rate ◽  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Gaseous Mixture ◽  
Film Surface ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Substrate Dependence ◽  
Si Films

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH4gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH4diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar+on the film surface.

Effects of C/Si Ratio on the Structure of β-SiC Film by Halide CVD

2014 ◽  
Vol 616 ◽  
pp. 227-231 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Preferred Orientation ◽  
Carrier Gas ◽  
Sic Film ◽  
Sic Films

Thick (over 1 mm) β-SiC films were deposited at a deposition temperature of 1823 K and a total pressure of 4 kPa by halide CVD using SiCl4 and CH4as precursors, and H2 as carrier gas. The maximum deposition rate was 1125 μm h−1. The SiC films showed strong (220) preferred orientation. The grain size increased from 20 to 100 μm with increasing C/Si ratio.

Finite Element Simulation of Effects of Process Parameters on Deposition Rate of SiC by Chemical Vapor Deposition

2009 ◽  
Vol 610-613 ◽  
pp. 635-640 ◽  
Author(s):  
Guo Dong Sun ◽  
He Jun Li ◽  
Shou Yang Zhang ◽  
Qian Gang Fu ◽  
Wei Cao ◽  
...  
Keyword(s):  
Finite Element ◽  
Deposition Rate ◽  
Process Parameters ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Volume Ratio ◽  
Chemical Vapor ◽  
Deposition Behavior ◽  
Element Simulation ◽  
Mixed Gases

A two-dimensional mathematical model for deposition behavior of SiC coating on C/C composites in a hot-wall CVD reactor was developed. Deposition rate of SiC was calculated by finite element method and optimized by using an orthogonal L9(3)4 test. The single and coupling effects of process parameters on deposition rate of SiC, including deposition temperature, the flux of mixed gases, the volume ratio of H2 and Ar, and that of MTS and mixed gases, were calculated and discussed. The optimal deposition rate of SiC was obtained.

Mocvd of Copper from the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)

1998 ◽  
Vol 514 ◽  
Author(s):  
H.-K. Shin ◽  
Y.-H. Cho ◽  
D.-J. Yoo ◽  
H.-J. Shin ◽  
E.-S. Lee
Keyword(s):  
Surface Morphology ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Pure Copper ◽  
Copper Films ◽  
Vapor Pressures ◽  
Dynamic Vacuum ◽  
Liquid Precursor ◽  
Temperature Range

ABSTRACTIn an attempt to increase the deposition rate, new Cu (I) compounds, (hfac)Cu(1-pentene)(1) and (hfac)Cu(VTMOS)(2) have been synthesized. These species are chartreuse liquids and exhibit sufficient vapor pressures to allow high transport rates.In order to avoid the premature decomposition of the copper precursors during CVD processes, the 50% of free 1-pentene, and VTMOS was added to the compounds 1 and 2 respectively. These mixtures 1 and 2 were used in this study. Approximately 2gm of precursor was used for each experiment. No premature decomposition of the precursor in the source reservoir was observed during CVD processes. It is a sufficiently important result to expect the use of these mixtures in copper CVD to achieve the reproducible deposition.The copper films using these mixtures were deposited in a hot-wall pyrex reactor at a pressure of approximately 10–2 torr under dynamic vacuum. The films deposited at 100°C, 150°C and 200°C from the mixture 1. Pure copper films were deposited from these species. The resistivities 1.8 ∼ 2.1 μΩcm were obtained in the deposition temperature range. SEM revealed that the surface morphology of the films grown in these depositon temperature range was composed of dense film and grains were well connected. The deposition rate at 200°C was 3,500 Å/min.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

Microstructure and deposition kinetics of Nb prepared by chemical vapor deposition

2018 ◽  
Vol 32 (22) ◽  
pp. 1850257 ◽  
Author(s):  
Yan Wei ◽  
Da Wei Zhang ◽  
Jun Wang ◽  
Hong Zhong Cai ◽  
Xu Xiang Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Low Temperature ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Kinetics ◽  
Hydrogen Flow

The deposition kinetics and microstructure of chemical vapor deposition (CVD) of Nb on the Mo substrate at different deposition variables is investigated. The morphology of CVD Nb is columnar, it exhibits a strong preferred orientation and its growth direction is perpendicular to the substrate surface, the deposition rate and grain size increased with the increase of deposition temperature. The deposition rate conforms to the Arrhenius formula, the activation energy [Formula: see text] at high temperature and low temperature is 0.85 kJ/mol and 7.2 kJ/mol, respectively. The rate-limiting step for CVD Nb at high temperature is chemical reaction step, whereas that is the mass transport step at low temperature. Chlorination temperature has a weak influence on deposition rate and grain structure, the deposition rate and grain size of CVD Nb increased with the increase of the chlorine flow and hydrogen flow, the maximum deposition rate is [Formula: see text], thus, the optimum deposition temperature is 1200[Formula: see text]C, chlorination temperature is 350[Formula: see text]C, hydrogen flow is 400 ml, chlorine flow is 200 ml.

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