Substrate Dependence of Microcrystalline Silicon Growth with SiH4 Diluted by Ar

2014 ◽  
Vol 936 ◽  
pp. 264-268
Author(s):  
Hua Cheng ◽  
Yong Chan Qian ◽  
Jun Xue
Keyword(s):  
Deposition Rate ◽  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Gaseous Mixture ◽  
Film Surface ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Substrate Dependence ◽  
Si Films

Microcrystalline Si films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using Ar diluted SiH4gaseous mixture. The effects of the substrate on deposition rate, preferred orientation and roughness of the films were investigated. The results show that, the influence of the substrate surface chemical nature on the deposition rate is significant in the initial stage of the growth. And considering the crystallinity and roughness of the films, the substrate is favored in its preferred orientation with a rougher surface. Based on these results, it is confirmed that the combination of diffusion and etching is indispensable to describe the deposition of μc-Si with SiH4diluted by Ar, and the mechanism of μc-Si growth could be controlled by diffusion of Si and etching of the Ar+on the film surface.

Effect of Temperature on the Microstructure and Electrical Conductivity of Microcrystalline Si Films

2017 ◽  
Vol 895 ◽  
pp. 28-32 ◽  
Author(s):  
Hua Cheng ◽  
Di Wang ◽  
Feng Li Li
Keyword(s):  
Electrical Conductivity ◽  
Grain Size ◽  
Substrate Temperature ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Effect Of Temperature ◽  
Si Films ◽  
Resonance Plasma

Micro-Si films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of the substrate temperature on microstructure and electrical conductivity of micro-Si film were investigated. The results show that, with the increasing of substrate temperature, crystallinity and grain size increased monotonously, of which a competing balance would determine the electrical conductivity of micro-Si films. Based on these results, relatively small grain size and appropriate crystallinity would be beneficial to improve the electrical properties of micro-Si films.

High-Speed Deposition of SiC Thick Film by Halide Precursor

2014 ◽  
Vol 616 ◽  
pp. 37-42 ◽  
Author(s):  
Ming Xu Han ◽  
Wei Zhou ◽  
Ding Heng Zheng ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thick Film ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
High Speed ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Preferred Orientation ◽  
Graphite Substrate ◽  
Deposition Effect

Polycrystalline ڂ˽SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition. Effect of deposition temperature (Tdep) on deposition rate, surface morphology and preferred orientation has been studied. The preferred orientation changed from <111> to <110> with increasing Tdep. The maximum deposition rate (Rdep) of 1125 ڌ̽˰̸−1 has been obtained. The surface morphology has changed from six-fold pyramid to five-fold facet with increasing Tdep.

Influence of Power on the Microstructure and Optical Properties of Microcrystalline Si Films

2014 ◽  
Vol 1016 ◽  
pp. 305-308
Author(s):  
Hua Cheng ◽  
Feng Jiang ◽  
Chang Zheng Ma ◽  
Kuo Jiang
Keyword(s):  
Optical Properties ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Si Films ◽  
Resonance Plasma

Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of power on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the power, the crystallinity increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89eV to 1.75eV with the microwave power ranging from 400 W to 650W.

Amorphous Silicon Precipitates in (100) c-SI Films Grown by ECRCVD

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Birkholz ◽  
J. Platen ◽  
I. Sieber ◽  
W. Bohne ◽  
J. Röhrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Depth Profiling ◽  
Film Surface ◽  
Chemical Vapor ◽  
Elastic Recoil ◽  
Pronounced Increase ◽  
Detection Analysis ◽  
Si Films

AbstractSilicon films were grown on (100) n-Si with an electron-cyclotron resonance chemical vapor deposition (ECRCVD) system by decomposition of SiH4 at 325°C. Structure and composition of thin films were investigated by SEM, Raman spectroscopy, elastic recoil detection analysis (ERDA) and TEM. Excellent epitaxial growth was achieved for some hundred nm thickness. For more than 1 μm thick films, however, SEM revealed the occurrence of conical structures orientated upside-down with their basal plane in the film surface. Depth-profiling of the elemental composition of thin films by means of ERDA showed the hydrogen content CH to exhibit a pronounced increase with increasing film thickness. Raman spectroscopy evidenced the coexistence of c-Si and a-Si:H by the occurrence of two bands at 520 and 480 cm-1, the ratio of which was found to depend sensitively upon the position of the laser spot on the sample. All experimental results could be consistently explained by assuming the conical precipitates to consist of a-Si:H which was finally proven by coherent electron beam diffraction (CEBD).

Synthesis of Carbon Nanotubes on a Moving Substrate by Laser-Induced Chemical Vapor Deposition

2005 ◽  
Author(s):  
Kinghong Kwok ◽  
Wilson K. S. Chiu
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Multi Wall Carbon Nanotubes ◽  
Vapor Deposition Technique ◽  
Synthesis Of Carbon Nanotubes

An open-air laser-induced chemical vapor deposition technique has been successfully used to rapidly deposit pillars of carbon nanotube forest on a moving glass substrate. A CO2 laser is used to heat a traversing fused quartz rod covered with metal particles inside a hydrocarbon environment. Pyrolysis of hydrocarbon precursor gas occurs and subsequently gives rise to the growth of multi-wall carbon nanotubes on the substrate surface. The experimental results indicate that nanotube growth kinetics and microstructure are strongly dependent on the experimental parameters such as laser power. The typical deposition rate of carbon nanotubes achieved in this study is over 50 μm/s, which is relatively high compared to existing synthesis techniques. At high power laser irradiation, carbon fibers and carbon film are formed as a result of excessive formation of amorphous carbon on the substrate. High-resolution transmission and scanning electron microscopy, and x-ray energy-dispersive spectrometry are used to investigate the deposition rate, microstructure and chemical composition of the catalytic surface and the deposited carbon nanotubes.

Afm/Tem Investigation of Low Temperature Polycrystalline Silicon Grown by ECR-CVD

1995 ◽  
Vol 406 ◽  
Author(s):  
H. L. Hsiao ◽  
K. C. Wang ◽  
L. W. Cheng ◽  
A. B. Yang ◽  
T. R. Yew ◽  
...  
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Chemical Vapor ◽  
Plan View ◽  
3 Dimensional ◽  
High Resolution Tem ◽  
Si Films ◽  
Polycrystalline Silicon Films

AbstractThe polycrystalline silicon films were deposited by electron cyclotron resonance chemical vapor deposition (ECR-CVD) with hydrogen dilution at 250°C and without any thermal annealing. The surface morphology and the microstructure of the poly-Si films are investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM), crosssectional TEM and high resolution TEM (HRTEM). The low temperature poly-Si films deposited by ECR-CVD show a special leaf-like grain shape (plan-view) and an upside-down cone shape (3-dimensional view). The grains in the poly-Si films have preferred orientation of <112> and the longer side of the leaf-like grain is direction and the shorter side is direction. Lattice bending and interruption are found in the films. The arrangement of the atoms on the grains are well ordered, while atoms in the interfacial regions are randomly distributed. A simple grain formation model based on growth rate differences between different planes and etching effect can explain the film growth mechanism and the formation of the special grain geometry.

Nondestructive defect measurement and surface analysis of 3C-SiC on Si (001) by electron channeling contrast imaging

2008 ◽  
Vol 1068 ◽  
Author(s):  
Yoosuf N. Picard ◽  
Christopher Locke ◽  
Christopher L. Frewin ◽  
Rachael L. Myers-Ward ◽  
Joshua D. Caldwell ◽  
...  
Keyword(s):  
Electron Backscatter Diffraction ◽  
Substrate Surface ◽  
Film Surface ◽  
Chemical Vapor ◽  
Atomic Step ◽  
Contrast Imaging ◽  
Electron Channeling ◽  
Dislocation Densities ◽  
Backscatter Diffraction ◽  
Sic Films

ABSTRACTThe electron channeling contrast imaging (ECCI) technique was utilized to investigate atomic step morphologies and dislocation densities in 3C-SiC films grown by chemical vapor deposition (CVD) on Si (001) substrates. ECCI in this study was performed inside a commercial scanning electron microscope using an electron backscatter diffraction (EBSD) system equipped with forescatter diode detectors. This approach allowed simultaneous imaging of atomic steps, verified by atomic force microscopy, and dislocations at the film surface. EBSD analysis verified the orientation and monocrystalline quality of the 3C-SiC films. Dislocation densities in 3C-SiC films were measured locally using ECCI, with qualitative verification by x-ray diffraction. Differences in the dislocation density across a 50 mm diameter 3C-SiC film could be attributed to subtle variations during the carbonization process across the substrate surface.

Facet Free Selective Silicon Epitaxy by Rapid Thermal Chemical Vapor Deposition

1998 ◽  
Vol 525 ◽  
Author(s):  
Katherine E. Violette ◽  
Rick Wise ◽  
Chih-Ping Chao ◽  
Sreenath Unnikrishnan
Keyword(s):  
Growth Rate ◽  
Deposition Rate ◽  
Silicon Surface ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Selective Epitaxy ◽  
Silicon Epitaxy ◽  
Surface Mobility ◽  
Polysilicon Gate ◽  
Initial Stage

ABSTRACTA facet-free, selective epitaxy process has been identified using the SiH2CI2 /HCI/H2 chemistry in a commercially available, single-wafer epitaxy reactor. The pre-epitaxy bake required a minimum of 900°C in order to obtain a clean silicon surface with reasonable throughput while preserving the integrity of the shallow trench isolation structures. The epitaxy growth rate ranged from as low as 130Å/rnin at 825°C, 10 torr to as high as 1500 Å/min at 875°C and 70 torr while the deposition rate of polysilicon on polysilicon differed significantly: at 10 torr, the epitaxy growth rate is greater by as much as 50%, and at 70 torr the polysilicon deposition rate is greater by as much as 40%. The facet suppression depended heavily on two things: the undercut beneath the polysilicon gate sidewall insulator and the process pressure. The undercut is believed to be responsible for suppressing the initial stage of facet formation, most probably by completely eliminating lateral overgrowth of the crystal. The process conditions then enable continued facet suppression perhaps by restricting the silicon surface mobility. The sidewall structure and process conditions combine to make a reliably facet-free selective epitaxy process

Initial Growth Behavior of Ultra-Thin c-Axis-Oriented Epitaxial SrBi2Ta2O9 films on SrTuO3

2005 ◽  
Vol 902 ◽  
Author(s):  
Kenji Takahashi ◽  
Muneyasu Suzuki ◽  
Mamoru Yoshimoto ◽  
Hiroshi Funakubo
Keyword(s):  
Substrate Surface ◽  
Film Surface ◽  
Chemical Vapor ◽  
Single Step ◽  
Growth Behavior ◽  
Unit Cell ◽  
Atomic Scale ◽  
Growth Unit ◽  
Atomic Step ◽  
Initial Growth

Abstractc-axis-oriented epitaxial SrBi2Ta2O9 ultra-thin films were grown by pulse-gas-introduced metalorganic chemical vapor deposition (pulsed-MOCVD) on (100)SrTiO3 single crystal substrates with atomic scale step structure and their growth behavior was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). Minimum growth unit was found to be “ghalf-unit-cell” of SrBi2Ta2O9. Height of steps and width of terraces observed at SrBi2Ta2O9 film surface were in good agreement with those at SrTiO3 substrate surface. This shape transfer was induced by lattice displacement of SrBi2Ta2O9 along c-direction formed at atomic step on SrTiO3 substrate. In-plane growth of half-unit-cell SrBi2Ta2O9 2D-islands striding across the step walls was observed. It was considered to be a special phenomenon for c-axis-oriented films of layer-structured compounds due to their large crystal anisotropy and/or several times larger half-unit-cell height than single step one of SrTiO3.

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