Microstructure and deposition kinetics of Nb prepared by chemical vapor deposition

2018 ◽  
Vol 32 (22) ◽  
pp. 1850257 ◽  
Author(s):  
Yan Wei ◽  
Da Wei Zhang ◽  
Jun Wang ◽  
Hong Zhong Cai ◽  
Xu Xiang Zhang ◽  
...  
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Low Temperature ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Deposition Kinetics ◽  
Hydrogen Flow

The deposition kinetics and microstructure of chemical vapor deposition (CVD) of Nb on the Mo substrate at different deposition variables is investigated. The morphology of CVD Nb is columnar, it exhibits a strong preferred orientation and its growth direction is perpendicular to the substrate surface, the deposition rate and grain size increased with the increase of deposition temperature. The deposition rate conforms to the Arrhenius formula, the activation energy [Formula: see text] at high temperature and low temperature is 0.85 kJ/mol and 7.2 kJ/mol, respectively. The rate-limiting step for CVD Nb at high temperature is chemical reaction step, whereas that is the mass transport step at low temperature. Chlorination temperature has a weak influence on deposition rate and grain structure, the deposition rate and grain size of CVD Nb increased with the increase of the chlorine flow and hydrogen flow, the maximum deposition rate is [Formula: see text], thus, the optimum deposition temperature is 1200[Formula: see text]C, chlorination temperature is 350[Formula: see text]C, hydrogen flow is 400 ml, chlorine flow is 200 ml.

Effect of Different Deposition Pressure on Diamond Films Deposited by Hot Filament Chemical Vapor Deposition

2021 ◽  
Vol 21 (8) ◽  
pp. 4512-4518
Author(s):  
Rongguang Jin ◽  
Ji Cheng Ding ◽  
Chang Weon Song ◽  
Kwang Ho Kim
Keyword(s):  
Grain Size ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Nucleation Density ◽  
Deposition Pressure ◽  
Raman Spectrometry ◽  
Hot Filament

A hot filament chemical vapor deposition (HFCVD) method was adopted to deposit diamond films at deposition pressures ranging from 2–6 kPa. The effects of deposition pressure on the deposition rate, phase structure, and microstructure of diamond films were investigated. The surface morphology, grain size, micro-structure, and growth rate of the diamond films were analyzed using scanning electron microscopy, X-ray diffraction (XRD), and Raman spectrometry. The experimental results showed that granules on the surface exhibited increasingly compact structure with increasing deposition pressure. The diamond films deposited at various pressures have good compactness, and the particles on the film surfaces are arranged in an ordered manner. All films exhibited orientation along the (111) plane, which was the significant characteristic XRD peak of each diamond film. The (111) peak intensity was the strongest for the film prepared at 2 kPa deposition pressure. Overall, the deposition rate and grain size decreased with increasing deposition pressure, provided other deposition conditions remained unchanged. However, the densification of the microstructure and the nucleation density increased with increasing deposition pressure. Secondary nucleation became more pronounced as deposition pressure increased, and grain size decreased as nucleation density increased.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 311-314 ◽  
Author(s):  
Xiao An Fu ◽  
Jacob Trevino ◽  
Mehran Mehregany ◽  
Christian A. Zorman
Keyword(s):  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Atom Concentration ◽  
Pressure Chemical ◽  
Sic Films

This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02 -cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.

Highly (004)-Oriented Texture of γ-LiAlO2 Films by Laser Chemical Vapor Deposition

2014 ◽  
Vol 616 ◽  
pp. 141-144
Author(s):  
Chen Chi ◽  
Hirokazu Katsui ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Columnar Structure ◽  
Molar Ratio ◽  
Laser Chemical Vapor Deposition ◽  
Oriented Texture

(004)-oriented γ-LiAlO2films were prepared on poly-crystalline AlN substrates by laser chemical vapor deposition at deposition temperature (Tdep) of 1100–1250 K, molar ratio of Li/Al (RLi/Al) of 1.0–10 and low total pressure (Ptot) of 100–200 Pa. The (004)-oriented γ-LiAlO2films consisted of pyramidal grains with a columnar structure. The deposition rate of (004)-oriented γ-LiAlO2films reached to 65–72 μm h-1.

Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

2011 ◽  
Vol 181-182 ◽  
pp. 401-404
Author(s):  
Lan Li Chen ◽  
Sheng Zhao Wang ◽  
Ying Peng Yin ◽  
Ming Ji Shi
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Experimental Conditions

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 °C. On this work, optimal μc-Si:H can be obtained at 400°C deposition temperature in the suitable experimental conditions.

Preparation of Titania Solid Films by Laser CVD Using CO2 Laser

2012 ◽  
Vol 508 ◽  
pp. 279-282 ◽  
Author(s):  
Ming Gao ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Chamber Pressure ◽  
Laser Chemical Vapor Deposition ◽  
Solid Films ◽  
Solid Film ◽  
Laser Cvd

Titania (TiO2) Films Having Dense and Solid Microstructure Were Prepared by Laser Chemical Vapor Deposition Using CO2 Laser. The Effects of Deposition Temperature (Tdep) and Total Chamber Pressure (Ptot) on Phase and Microstructure of TiO2 Films Were Investigated. At Ptot = 600 Pa and Tdep = 790 K, Rutile TiO2 Film Had a Polygonal Platelet Grains 2 μm in Size. At Ptot = 600 Pa and Tdep = 1010 K, Rutile TiO2 Film Had (110) Orientation and Consisted of a Truncated Polyhedron 5–6 μm in Size. At Ptot = 200 Pa and Tdep = 955 K, Rutile TiO2 Film Has a Solid Columnar Having Faceted Surface. A Dense and Solid TiO2 Film Was Obtained at Ptot = 200 Pa and Tdep = 1120 K. The Deposition Rate of TiO2 Solid Film Was Reached 240 μm h−1.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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