Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor

2015 ◽  
Vol 645-646 ◽  
pp. 120-125 ◽  
Author(s):  
Xiao Feng Zhao ◽  
Yi Fan Li ◽  
Mei Wei Lv ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Oscillation Frequency ◽  
Negative Resistance ◽  
Frequency Characteristics ◽  
High Resistivity ◽  
Collector Current ◽  
Oscillation Phenomenon ◽  
Mems Technology ◽  
Magnetic Sensitivity

A silicon magnetic sensitivity transistor (SMST) with negative resistance oscillations phenomenon is presented in this paper, which is constituted by emitter (E), base (B) and collector (C). The SMST chip is fabricated on <100> orientation high resistivity C-type silicon cup by using MEMS technology. Experiment results show, when external magnetic fieldB=0 T, base injection currentIbis the scope of 1.5mA to 1.7mA andVCEis greater than 4.0V, the collector currentIcappears negative resistance oscillation phenomenon, the oscillation frequency will increase with the increase of theVCE.Icchanges with external magnetic fieldB, whereVCEandIbare constant. With the condition of theIb=1.5 mA andVCE=9.0 V, the oscillation frequency ofB=0 mTand B=-150 mT are 5.88 kHz and 7.60 kHz, respectively.

Mechanism research of negative resistance oscillations characteristics of the silicon magnetic sensitive transistor with long base region

2018 ◽  
Vol 32 (24) ◽  
pp. 1850261
Author(s):  
Yunjia Bai ◽  
Xiaofeng Zhao ◽  
Jiandong Hao ◽  
Dianzhong Wen
Keyword(s):  
Printed Circuit Board ◽  
Deep Level ◽  
Negative Resistance ◽  
Circuit Board ◽  
Base Region ◽  
Collector Current ◽  
Oscillation Phenomenon ◽  
Mems Technology ◽  
Emitter Region ◽  
P Type

A silicon magnetic sensitive transistor (SMST) with the negative resistance oscillation phenomenon is presented in this paper. The SMST of cubic structure is composed of three regions and three electrodes (E, C and B). Two of the regions (collector region and base region) are designed on the top surface of the SMST, and the emitter region is designed at the bottom of the SMST. Using microelectromechanical system (MEMS) technology, the chip is fabricated on [Formula: see text] orientation p-type silicon (near intrinsic) wafer and packaged on printed circuit board (PCB). When collector voltage (V[Formula: see text]) and the base injecting current (I[Formula: see text]) are a certain value, the experimental results show that the collector current (I[Formula: see text]) attains negative resistance oscillation phenomenon and it is influenced by the external magnetic field (B) and temperature (T). Based on the effect of deep-level impurities on the carrier net recombination rate, theoretical analysis demonstrates that the deep-level impurities are the main factors of the appearance for oscillations phenomenon.

Research of Magnetic Characteristics of the Split-Drain MAGFET Based on Nano-Polysilicon TFTs

2015 ◽  
Vol 645-646 ◽  
pp. 132-138
Author(s):  
Xiao Feng Zhao ◽  
Han Yu Guan ◽  
Mei Wei Lv ◽  
Yi Nan Bai ◽  
Dian Zhong Wen
Keyword(s):  
Magnetic Field ◽  
Thin Film Transistor ◽  
Magnetic Field Effect ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Magnetic Characteristics ◽  
The Absolute ◽  
Magnetic Sensitivity ◽  
High Resistivity Silicon

The split-drain magnetic field effect transistor (MAGFET) based on nanopolysilicon thin film transistor (TFT) is fabricated on <100> high resistivity silicon substrates by (complementary metal oxide semiconductor) CMOS technology in this paper. It contains source (S), drain1 (D1), drain2 (D2) and gate (G), and adopts nanopolysilicon thin films and nanopolysilicon/high resistivity silicon heterojunction interfaces as the magnetic field sensing layers. The influence of the channel size and shapes on the transistor, are studied to further improve its magnetic sensitivity. When the ratio of channel length and width (L/W) of MAGFET is 80 μm/160 μm, VDS=5.0 V, the MAGFET with convex channel has higher magnetic sensitivity than the rectangle and concave, the absolute current magnetic sensitivity SI and the absolute voltage magnetic sensitivity SV of the proposed sensor reach the maximum values, and are 0.021 mA/T and 55 mV/T, respectively.

Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

2015 ◽  
Vol 645-646 ◽  
pp. 595-599
Author(s):  
Xiao Feng Zhao ◽  
Qian Ru Lin ◽  
Ai Lin Mu ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang
Keyword(s):  
Magnetic Field ◽  
Magnetic Characteristic ◽  
Channel Length ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Length Width ◽  
Field Sensor ◽  
Magnetic Sensitivity ◽  
The Magnetic Field

This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.

RECOIL IMPLANTATION MÖSSBAUER EXPERIMENT ON 57Fe IN Ge IN THE PRESENCE OF AN EXTERNAL MAGNETIC FIELD

1980 ◽  
Vol 41 (C1) ◽  
pp. C1-445-C1-445
Author(s):  
G. Langouche ◽  
N. S. Dixon ◽  
L. Gettner ◽  
S. S. Hanna
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Recoil Implantation

High Resolution Current Imaging by Direct Magnetic Field Sensing

2003 ◽  
Author(s):  
S.I. Woods ◽  
Nesco M. Lettsome ◽  
A.B. Cawthorne ◽  
L.A. Knauss ◽  
R.H. Koch
Keyword(s):  
Magnetic Field ◽  
High Resolution ◽  
Spatial Resolution ◽  
Great Promise ◽  
Magnetoresistive Sensor ◽  
Magnetic Sensitivity ◽  
Current Lines ◽  
Scanning Squid ◽  
Scanning Fiber ◽  
Ferromagnetic Probe

Abstract Two types of magnetic microscopes have been investigated for use in high resolution current mapping. The scanning fiber/SQUID microscope uses a SQUID sensor coupled to a nanoscale ferromagnetic probe, and the GMR microscope employs a nanoscale giant magnetoresistive sensor. Initial scans demonstrate that these microscopes can resolve current lines less than 10 µm apart with edge resolution of 1 µm. These types of microscopes are compared with the performance of a standard scanning SQUID microscope and with each other with respect to spatial resolution and magnetic sensitivity. Both microscopes show great promise for identifying current defects in die level devices.

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