Research of Magnetic Characteristics of the Split-Drain MAGFET Based on Nano-Polysilicon TFTs

2015 ◽  
Vol 645-646 ◽  
pp. 132-138
Author(s):  
Xiao Feng Zhao ◽  
Han Yu Guan ◽  
Mei Wei Lv ◽  
Yi Nan Bai ◽  
Dian Zhong Wen
Keyword(s):  
Magnetic Field ◽  
Thin Film Transistor ◽  
Magnetic Field Effect ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Magnetic Characteristics ◽  
The Absolute ◽  
Magnetic Sensitivity ◽  
High Resistivity Silicon

The split-drain magnetic field effect transistor (MAGFET) based on nanopolysilicon thin film transistor (TFT) is fabricated on <100> high resistivity silicon substrates by (complementary metal oxide semiconductor) CMOS technology in this paper. It contains source (S), drain1 (D1), drain2 (D2) and gate (G), and adopts nanopolysilicon thin films and nanopolysilicon/high resistivity silicon heterojunction interfaces as the magnetic field sensing layers. The influence of the channel size and shapes on the transistor, are studied to further improve its magnetic sensitivity. When the ratio of channel length and width (L/W) of MAGFET is 80 μm/160 μm, VDS=5.0 V, the MAGFET with convex channel has higher magnetic sensitivity than the rectangle and concave, the absolute current magnetic sensitivity SI and the absolute voltage magnetic sensitivity SV of the proposed sensor reach the maximum values, and are 0.021 mA/T and 55 mV/T, respectively.

Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

2015 ◽  
Vol 645-646 ◽  
pp. 595-599
Author(s):  
Xiao Feng Zhao ◽  
Qian Ru Lin ◽  
Ai Lin Mu ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang
Keyword(s):  
Magnetic Field ◽  
Magnetic Characteristic ◽  
Channel Length ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Length Width ◽  
Field Sensor ◽  
Magnetic Sensitivity ◽  
The Magnetic Field

This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.

scholarly journals Magnetic Micro Sensors with Two Magnetic Field Effect Transistors Fabricated Using the Commercial Complementary Metal Oxide Semiconductor Process

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4731
Author(s):  
Wei-Ren Chen ◽  
Yao-Chuan Tsai ◽  
Po-Jen Shih ◽  
Cheng-Chih Hsu ◽  
Ching-Liang Dai
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Magnetic Field Effect ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Micro Sensor

The fabrication and characterization of a magnetic micro sensor (MMS) with two magnetic field effect transistors (MAGFETs) based on the commercial complementary metal oxide semiconductor (CMOS) process are investigated. The magnetic micro sensor is a three-axis sensing type. The structure of the magnetic microsensor is composed of an x/y-MAGFET and a z-MAGFET. The x/y-MAGFET is employed to sense the magnetic field (MF) in the x- and y-axis, and the z-MAGFET is used to detect the MF in the z-axis. To increase the sensitivity of the magnetic microsensor, gates are introduced into the two MAGFETs. The sensing current of the MAGFET enhances when a bias voltage is applied to the gates. The finite element method software Sentaurus TCAD was used to analyze the MMS’s performance. Experiments show that the MMS has a sensitivity of 182 mV/T in the x-axis MF and a sensitivity of 180 mV/T in the y-axis MF. The sensitivity of the MMS is 27.8 mV/T in the z-axis MF.

Multiferroic Memory: A Disruptive Technology or Future Technology?

2012 ◽  
Vol 189 ◽  
pp. 1-14 ◽  
Author(s):  
Ashok Kumar ◽  
Nora Ortega ◽  
Sandra Dussan ◽  
Shalini Kumari ◽  
Dilsom Sanchez ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Electric Fields ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Bismuth Ferrite ◽  
Random Access ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Disruptive Technology

The term "Multiferroic" is coined for a material possessing at least two ferroic orders in the same or composite phase (ferromagnetic, ferroelectric, ferroelastic); if the first two ferroic orders are linearly coupled together it is known as a magnetoelectric (ME) multiferroic. Two kinds of ME multiferroic memory devices are under extensive research based on the philosophy of "switching of polarization by magnetic fields and magnetization by electric fields." Successful switching of ferroic orders will provide an extra degree of freedom to create more logic states. The "switching of polarization by magnetic fields" is useful for magnetic field sensors and for memory elements if, for example, polarization switching is via a very small magnetic field from a coil underneath an integrated circuit. The electric control of magnetization is suitable for nondestructive low-power, high-density magnetically read and electrically written memory elements. If the system possesses additional features, such as propagating magnon (spin wave) excitations at room temperature, additional functional applications may be possible. Magnon-based logic (magnonic) systems have been initiated by various scientists, and prototype devices show potential for future complementary metal oxide semiconductor (CMOS) technology. Discovery of high polarization, magnetization, piezoelectric, spin waves (magnon), magneto-electric, photovoltaic, exchange bias coupling, etc. make bismuth ferrite, BiFeO3, one of the widely investigated materials in this decade. Basic multiferroic features of well known room temperature single phase BiFeO3in bulk and thin films have been discussed. Functional magnetoelectric (ME) properties of some lead-based solid solution perovskite multiferroics are presented and these systems also have a bright future. The prospects and the limitations of the ME-based random access memory (MERAM) are explained in the context of recent discoveries and state of the art research.

Frequency Characteristics Research for the Negative Resistance Oscillations Phenomenon of a Silicon Magnetic Sensitivity Transistor

2015 ◽  
Vol 645-646 ◽  
pp. 120-125 ◽  
Author(s):  
Xiao Feng Zhao ◽  
Yi Fan Li ◽  
Mei Wei Lv ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Oscillation Frequency ◽  
Negative Resistance ◽  
Frequency Characteristics ◽  
High Resistivity ◽  
Collector Current ◽  
Oscillation Phenomenon ◽  
Mems Technology ◽  
Magnetic Sensitivity

A silicon magnetic sensitivity transistor (SMST) with negative resistance oscillations phenomenon is presented in this paper, which is constituted by emitter (E), base (B) and collector (C). The SMST chip is fabricated on <100> orientation high resistivity C-type silicon cup by using MEMS technology. Experiment results show, when external magnetic fieldB=0 T, base injection currentIbis the scope of 1.5mA to 1.7mA andVCEis greater than 4.0V, the collector currentIcappears negative resistance oscillation phenomenon, the oscillation frequency will increase with the increase of theVCE.Icchanges with external magnetic fieldB, whereVCEandIbare constant. With the condition of theIb=1.5 mA andVCE=9.0 V, the oscillation frequency ofB=0 mTand B=-150 mT are 5.88 kHz and 7.60 kHz, respectively.

scholarly journals Magnetic sensitivity modeling of dual gate MOS transistor

2021 ◽  
Vol 24 (2) ◽  
pp. 1238
Author(s):  
Mohamed Kessi ◽  
Arezki Benfdila
Keyword(s):  
Magnetic Field ◽  
Threshold Voltage ◽  
Field Effect ◽  
Potential Distribution ◽  
Magnetic Field Effect ◽  
Oxide Semiconductor ◽  
Electron Velocity ◽  
Total Charge ◽  
Mos Transistor ◽  
The Magnetic Field

In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (I<sub>ON</sub>), subthreshold leakage current (IOF), threshold voltage (V<sub>T</sub>), magneto-transconductance (g<sub>mm</sub>) and output magneto-conductance (gm<sub>DS</sub>). In addition, a hall voltage (V<sub>H</sub>) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10<sup>-3</sup>V and 10<sup>2</sup> for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

Characterization and Applicatons of Arsenic-Implanted Mocvd-Grown GaAs Structures

1993 ◽  
Vol 316 ◽  
Author(s):  
Fereydoon Namavar ◽  
N. Kalkhoran ◽  
A. Cremins ◽  
S. Vernon
Keyword(s):  
Surface Passivation ◽  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Buffer Layers ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
High Electron ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

ABSTRACTArsenic precipitates can be formed in GaAs using arsenic implantation and annealing, thereby producing very high resistivity (surface or buried) GaAs layers. Arsenic-implanted materials are similar to low-temperature (LT) GaAs:As buffer layers grown by molecular beam epitaxy (MBE) which are used for eliminating side- and backgating problems in GaAs circuits. Arsenic implantation is not only a simple and economical technique for device isolation but also can improve the quality of individual devices. Through surface passivation, arsenic implantation can reduce gate-to-drain leakage in and enhance the breakdown voltage of GaAs-based metal semiconductor field-effect transistors (MESFETs) and high electron mobility transistors (HEMTs). High resistivity thin surface layers may be used as gate insulators for GaAs-based metal insulator semiconductor (MIS) FETs, leading to the development of a novel GaAs-based complementary metal insulator semiconductor (CMIS) technology like advanced Si-based complementary metal oxide semiconductor (CMOS) technology but with higher radiation hardness and operational speed.

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