Characterizations of Removal Rate and Temperature in the Inductively Coupled Plasma Etching of Silicon Carbide

2016 ◽  
Vol 679 ◽  
pp. 85-90
Author(s):  
Na Li ◽  
Peng Zhang ◽  
Qiang Xin ◽  
Jiang Jin ◽  
Bo Wang
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Processing Time ◽  
Removal Rate ◽  
Influence Factors ◽  
High Hardness ◽  
Input Power ◽  
Processing Temperature ◽  
Space Applications ◽  
Inductively Coupled

Silicon carbide (SiC) is widely used in terrestrial and space applications because of its good mechanical, thermal and optical properties. Nevertheless, traditional grinding and polishing technologies cannot meet the machining requirements due to the high hardness and brittleness. In this paper, Inductively Coupled Plasma (ICP) is utilized to process the SiC optics. The effects of different processing recipes on the removal rate and temperature are investigated. The results show that the removal rate almost keeps stable with processing time and changes with the flow rate of plasma gas, reaction gas, the ratio of CF4/O2 and the power. The input power and processing time are the two main influence factors on the processing temperature.

Microstructure of TiC/Amorphous Hydrocarbon Nanocomposite Coatings

2000 ◽  
Vol 6 (S2) ◽  
pp. 440-441
Author(s):  
D. M. Cao ◽  
J. C. Jiang ◽  
B. Feng ◽  
W. J. Meng
Keyword(s):  
Inductively Coupled Plasma ◽  
High Hardness ◽  
Ceramic Surface ◽  
Edge Structure ◽  
X Ray ◽  
Inductively Coupled ◽  
Transmission Electron ◽  
Wide Range ◽  
Mechanical Components ◽  
X Ray Absorption

Application of an appropriate ceramic surface coating to mechanical components such as bearings and gears can provide longer life and increased performance reliability. Metal-containing hydrocarbon (Me-C:H) coatings possess high hardness, together with low friction and low wear rate. They have also been suggested to adhere better to metallic substrates. This combination of attractive mechanical/tribological properties makes Me-C:H coatings potentially useful for surface modification of a wide range of mechanical components.Using the technique of inductively coupled plasma (ICP) assisted vapor deposition[1], we have synthesized Ti-containing hydrocarbon (Ti-C:H) coatings with a wide range of Ti compositions[2]. Coating mechanical properties such as modulus and hardness have been measured by the technique of nanoindentation and correlated to Ti and hydrogen compositions[2,3].We have performed detailed microstructural examination of Ti-C:H coatings by transmission electron microscopy (TEM), Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy, and X-ray Absorption Near Edge Structure (XANES) spectroscopy.

Surface roughness of silicon carbide etching in a NF3 inductively coupled plasma

Vacuum ◽  
2005 ◽  
Vol 80 (4) ◽  
pp. 343-349 ◽  
Author(s):  
Byungwhan Kim ◽  
Kyeon Kyun Lee ◽  
Byung Teak Lee
Keyword(s):  
Surface Roughness ◽  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled

scholarly journals A Review: Inductively Coupled Plasma Reactive Ion Etching of Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 123
Author(s):  
Katarzyna Racka-Szmidt ◽  
Bartłomiej Stonio ◽  
Jarosław Żelazko ◽  
Maciej Filipiak ◽  
Mariusz Sochacki
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Reactive Ion Etching ◽  
Semiconductor Processing ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Hard Materials ◽  
Potential Benefits ◽  
First Time

The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures, and tilted sidewalls with a controlled angle. The ICP-RIE method combining a high finishing accuracy and reproducibility is excellent for etching hard materials, such as SiC, GaN or diamond. The paper presents a review of silicon carbide etching—principles of the ICP-RIE method, the results of SiC etching and undesired phenomena of the ICP-RIE process are presented. The article includes SEM photos and experimental results obtained from different ICP-RIE processes. The influence of O2 addition to the SF6 plasma as well as the change of both RIE and ICP power on the etching rate of the Cr mask used in processes and on the selectivity of SiC/Cr etching are reported for the first time. SiC is an attractive semiconductor with many excellent properties, that can bring huge potential benefits thorough advances in submicron semiconductor processing technology. Recently, there has been an interest in SiC due to its potential wide application in power electronics, in particular in automotive, renewable energy and rail transport.

Characteristics of Silicon Carbide Etching Using Magnetized Inductively Coupled Plasma

2005 ◽  
Vol 44 (3) ◽  
pp. 1445-1449 ◽  
Author(s):  
Hyo Young Lee ◽  
Dong Woo Kim ◽  
Yeon Jun Sung ◽  
Geun Young Yeom
Keyword(s):  
Silicon Carbide ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled
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