Study of Biological Properties of Thin-Film Materials on the Basis of the SIO2–P2O5–СaO System

2016 ◽  
Vol 683 ◽  
pp. 427-432 ◽  
Author(s):  
Lyudmila P. Borilo ◽  
Ekaterina S. Lyutova ◽  
Larisa N. Spivakova
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Film Coating ◽  
Biological Properties ◽  
Oxide System ◽  
Crystal Silicon ◽  
Practical Applications ◽  
Film Forming ◽  
The Moment

Thin films were obtained from film-forming solutions by the sol-gel method on the basis of the SiO2-P2O5-СаO system. Thin films were produced on the single-crystal silicon substrates (model substrate) by extraction at a velocity of 5 mm/s following by heat treatment at a temperature of 60°С for 20 minutes and at a temperature of 600°С for 1 hour. During the experiment it was established that film-forming solutions are usable only for 2 to 7 days from the moment of preparation. Using thermal and infra-red – spectroscopic analysis main stages of oxide system formation were retraced. According to data from x-ray phase analysis phases CaClH2PO4∙H2O, Ca(H2PO4)2∙H2O, CaHPO4∙2H2O, Ca2SiO4∙H2O, Ca5(PO4)3Cl. On the supporter’s surface a homogeneous film coating with quite equally spaced crystal-like formations with the diameter of 10-11 microns at the distance of 1-30 microns was formed. Phase composition, surface properties and biological activity of the synthesized materials were investigated. XRD results indicated that after being immersed into the SBF, hydroxylapatite, wollastonite, and chlorapatite were formed on the samples’ surfaces, which was important for practical applications

Рroperties of Bioactive Thin-Films Based on System SiO2-P2O5-CаO and SiO2-P2O5-СаO-Na2O Obtained by Sol-Gel Method

2016 ◽  
Vol 683 ◽  
pp. 306-311
Author(s):  
Lyudmila P. Borilo ◽  
Ekaterina S. Lyutova ◽  
Larisa N. Spivakova
Keyword(s):  
Thin Films ◽  
Calcium Ions ◽  
Calcium Phosphates ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Oxide System ◽  
Crystal Silicon ◽  
Gel Method ◽  
Sol Gel Method ◽  
Film Forming

Thin films were synthesized from alcohol film-forming solutions based on tethraethoxysilane, phosphoric acid, calcium chloride and sodium chloride using sol-gel method. Thin films were produced on the single-crystal silicon substrates (model substrate) by extraction at a velocity of 5 mm/s following by heat treatment at a temperature of 60°С for 20 minutes and at a temperature of 600°С for 1 hour. During the experiment it was established that film-forming solutions are usable only for 2 to 7 days from the moment of preparation. Using thermal and infra-red – spectroscopic analysis main stages of oxide system formation were retraced. According to data from x-ray phase analysis phases CaClH2PO4∙H2O, Ca (H2PO4)2∙H2O, CaHPO4∙2H2O, Ca2SiO4∙H2O, Ca5(PO4)3Cl и CaSiO3,NaCl, CaCl2, H2PO4·H2O, Ca5(PO4)3Cl, SiO2 are being registered in the sample. Biological activity of the received material was evaluated in SBF environment. Presence of the sodium oxide in the system leads to the increase in the bioactivity of the material. Such material intensively exchanges with solution in calcium ions and phosphate-ions; silanol groups fix calcium ions, furthering the formation of the layer of amorphous calcium phosphates gradually crystallizing in hydroxyapatite, and other calcium phosphates.

Synthesis and Biological Properties of Thin-Film Materials on the Basis of SiO2–P2O5–СаO–Na2O System

2015 ◽  
Vol 670 ◽  
pp. 196-201
Author(s):  
Lyudmila P. Borilo ◽  
Ekaterina S. Lyutova ◽  
Larisa N. Spivakova
Keyword(s):  
Thin Films ◽  
Calcium Ions ◽  
Calcium Phosphates ◽  
Sol Gel ◽  
Film Surface ◽  
Biological Properties ◽  
Oxide System ◽  
Crystal Silicon ◽  
Film Forming ◽  
Sbf Solution

Thin films for the SiO2–P2O5–CaO–Na2O system are synthesized using sol-gel method. Content of the oxides in the system is 52-18-20-10 wt.% correspondingly. Thin films were produced from film-forming solutions on the single-crystal silicon substrates (model substrate) by extraction at a velocity of 5 mm/s following by heat treatment at a temperature of 60-80 °С for 20 minutes and at a temperature of 600 °С for 1 hour. During the experiment it was established that film-forming solutions are usable only for 2 to 7 days from the moment of preparation. Using thermal and infra-red – spectroscopic analysis main stages of oxide system formation were retraced. On the surface of the material NaCl, CaCl2, H2PO4·H2O, Ca5(PO4)3Cl, and SiO2 phases are being registered. Presence of the significant amount of pores leads to the essential increase in the specific surface area, creating optimal conditions for the new bone tissue formation. Biological activity of the received material was evaluated in SBF environment. Ca and P content on the surface of the material increased twofold in two weeks. Such material interchanges calcium ions and phosphate ions with solution; silanol groups fix calcium ions, furthering the formation of the layer of amorphous calcium phosphates gradually crystallizing in hydroxyapatite, and other calcium phosphates. Presence of magnesium and sodium on the surface of the samples after their immersion into SBF solution indicates the settling of SBF solution components on the film surface.

Antireflective sol–gel TiO2 thin films for single crystal silicon and textured polycrystal silicon

2012 ◽  
Vol 62 (1) ◽  
pp. 24-30 ◽  
Author(s):  
N. H. Arabi ◽  
A. Iratni ◽  
H. El Hamzaoui ◽  
B. Capoen ◽  
M. Bouazaoui ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Tio2 Thin Films ◽  
Crystal Silicon

Fabrication of (Ba,Sr)TiO3 Thin Films by Hydrothermal Crystallization of Sol-Gel Precursor

2007 ◽  
Vol 336-338 ◽  
pp. 95-97
Author(s):  
Jing Yun Ma ◽  
Hong Yan Miao ◽  
Guo Qiang Tan ◽  
Zheng Qiu Sun
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Single Crystal Silicon ◽  
Dip Coating ◽  
Critical Parameters ◽  
Precursor Film ◽  
Hydrothermal Crystallization ◽  
Crystal Silicon ◽  
Bst Thin Films

Barium strontium titanate (BST) ferroelectric thin films have been successfully prepared on the single crystal silicon substrates using hydrothermal crystallization of sol-gel precursor, which combined the conventional sol-gel process and the hydrothermal method. The precursor film was deposited by the dip-coating method. The multiplayer BST gel films were hydrothermally treated in a Teflon vessel at low temperature of 160-180 °C for 1-3.5 h. The influences of the reaction conditions on the structure and crystallizing degree of BST thin films were discussed. We find that the temperature of as-dried gel films and post hydrothermal treatment are the critical parameters determining the quality of formation of BST thin films. Under optimized conditions, we can obtain well-developed perovskite BST films with smooth and pinhole-free surfaces. These results reveal that this technique is a promising low temperature process for the fabricating of thin films.

Characterisation of Ferroelectric Lithium Tantalate Thin Films Prepared by a Sol-Gel Process

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Single Crystal ◽  
Silicon Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Pyroelectric Coefficient ◽  
Crystal Silicon ◽  
Sol Gel Process

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.

The Use of Energy Dispersive Diffractometry to Measure the Thickness of Metal and Glass Thin Films

1981 ◽  
Vol 25 ◽  
pp. 365-371
Author(s):  
Glen A. Stone
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Energy Dispersive ◽  
Crystal Silicon ◽  
X Ray ◽  
Phosphosilicate Glass ◽  
Film Substrate

This paper presents a new method to measure the thickness of very thin films on a substrate material using energy dispersive x-ray diffractometry. The method can be used for many film-substrate combinations. The specific application to be presented is the measurement of phosphosilicate glass films on single crystal silicon wafers.

Selective and low temperature synthesis of polycrystalline diamond

1991 ◽  
Vol 6 (6) ◽  
pp. 1278-1286 ◽  
Author(s):  
R. Ramesham ◽  
T. Roppel ◽  
C. Ellis ◽  
D.A. Jaworske ◽  
W. Baugh
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Microwave Plasma ◽  
Diamond Particle ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Crystal Silicon ◽  
Diamond Thin Films

Polycrystalline diamond thin films have been deposited on single crystal silicon substrates at low temperatures (⋚ 600 °C) using a mixture of hydrogen and methane gases by high pressure microwave plasma-assisted chemical vapor deposition. Low temperature deposition has been achieved by cooling the substrate holder with nitrogen gas. For deposition at reduced substrate temperature, it has been found that nucleation of diamond will not occur unless the methane/hydrogen ratio is increased significantly from its value at higher substrate temperature. Selective deposition of polycrystalline diamond thin films has been achieved at 600 °C. Decrease in the diamond particle size and growth rate and an increase in surface smoothness have been observed with decreasing substrate temperature during the growth of thin films. As-deposited films are identified by Raman spectroscopy, and the morphology is analyzed by scanning electron microscopy.

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