Influence of Sputtering Temperature and Layer Thickness on the Electrical Performance of Thin Film Strain Sensors Consisting of Nickel-Carbon Composite

2019 ◽  
Vol 809 ◽  
pp. 413-418
Author(s):  
Christos Karapepas ◽  
Daisy Nestler ◽  
Guntram Wagner
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Carbon Composite ◽  
Operating Conditions ◽  
Strain Sensors ◽  
Electrical Performance ◽  
Gauge Factor ◽  
Commercial Strain ◽  
Phase Development ◽  
Hybrid Laminates

Hybrid laminates consisting of fibre-reinforced thermoplastic films and metallic thin sheets are successively replacing thermoset based systems due to their obvious advantages of higher formability and aptitude for mass production. In order to monitor the material under operating conditions, hybrid laminates need to be equipped with smart sensor units. Artifact-free integration of commercial strain gauges into hybrid laminates is almost impossible. Therefore, a new thin film strain sensor based on a PVD sputtering process was developed.The aim of this work was to evaluate the influence of the layer thickness as well as the elevated temperature during the sputtering process on the electrical performance of Ni-C strain sensors. The Ni-C films with different layer thickness and different sputtering temperatures manufactured by means of a magnetron sputtering process were investigated for the sheet resistance and the change of temperature coefficients of resistance. In addition, Raman spectroscopy was utilized to investigate the phase development with regard to different sputtering temperatures. It can be seen that the gauge factor gets doubled while optimizing the layer thickness. When the sputtering temperature was increased, the graphitic phase formation was preferred and the impurities were reduced. These results are discussed in this paper and appropriate solution concepts are provided.

scholarly journals TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

2021 ◽  
Author(s):  
Bablu K. Ghosh ◽  
Ismail Saad ◽  
Khairul A Mahmood
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Active Layer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Electrical Performance ◽  
Active Layer Thickness ◽  
Back Contact ◽  
Interface Layers

Abstract CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells voltage and fill factor loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that buffer and active layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter or buffer layer thickness and band gap matching to the active layer is potential to lessen parasitic absorption and shallow recombination loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field layer and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

scholarly journals Development, Characterisation and High-Temperature Suitability of Thin-Film Strain Gauges Directly Deposited with a New Sputter Coating System

Sensors ◽  
2020 ◽  
Vol 20 (11) ◽  
pp. 3294
Author(s):  
Daniel Klaas ◽  
Rico Ottermann ◽  
Folke Dencker ◽  
Marc Christopher Wurz
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Protective Layer ◽  
Strain Gauges ◽  
Gauge Factor ◽  
Coating System ◽  
Component Size ◽  
Commercial Strain ◽  
Operation Temperature ◽  
Sputter Coating

New sensor and sensor manufacturing technologies are identified as a key factor for a successful digitalisation and are therefore economically important for manufacturers and industry. To address various requirements, a new sputter coating system has been invented at the Institute of Micro Production Technology. It enables the deposition of sensor systems directly onto technical surfaces. Compared to commercially available systems, it has no spatial limitations concerning the maximum coatable component size. Moreover, it enables a simultaneous structuring of deposited layers. Within this paper, characterisation techniques, results and challenges concerning directly deposited thin film strain gauges with the new sputter coating system are presented. Constantan (CuNiMn 54/45/1) and NiCr 80/20 are used as sensor materials. The initial resistance, temperature coefficient of resistance and gauge factor/k-factor of quarter-bridge strain gauges are characterised. The influence of a protective layer on sensor behaviour and layer adhesion is investigated as well. Moreover, the temperature compensation quality of directly deposited half-bridge strain gauges is evaluated, optimised with an external trimming technology and benchmarked against commercial strain gauges. Finally, the suitability for high-temperature strain measurement is investigated. Results show a maximum operation temperature of at least 400 °C, which is above the current state-of-the-art of commercial foil-based metal strain gauges.

scholarly journals Inkjet Printing of Highly Sensitive, Transparent, Flexible Linear Piezoresistive Strain Sensors

Coatings ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 51
Author(s):  
Ting-Kuo Kang
Keyword(s):  
Thin Film ◽  
Inkjet Printing ◽  
Mechanical Strain ◽  
Strain Range ◽  
Phase Segregation ◽  
Strain Sensors ◽  
Tunneling Effect ◽  
Gauge Factor ◽  
Highly Sensitive ◽  
Thin Film Resistors

Flexible strain sensors are fabricated by using a simple and low-cost inkjet printing technology of graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)) conductive ink. The inkjet-printed thin-film resistors on a polyethylene terephthalate (PET) substrate exhibit an excellent optical transmittance of about 90% over a visible wavelength range from 400 to 800 nm. While an external mechanical strain is applied to thin-film resistors as strain sensors, a gauge factor (GF) of the piezoresistive (PR) strain sensors can be evaluated. To improve the GF value of the PR strain sensors, a high resistive (HR) path caused by the phase segregation of the PEDOT:PSS polymer material is, for the first time, proposed to be perpendicular to the PR strain sensing direction. The increase in the GF with the increase in the HR number of the PR strain sensors without a marked hysteresis is found. The result can be explained by the tunneling effect with varied initial tunneling distances and tunneling barriers due to the increase in the number of HR. Finally, a high GF value of approximately 165 of three HR paths is obtained with a linear output signal at the strain range from 0% to 0.33%, further achieving for the inkjet printing of highly sensitive, transparent, and flexible linear PR strain sensors.

Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors

2016 ◽  
Vol 672 ◽  
pp. 449-456 ◽  
Author(s):  
Myeong Gu Yun ◽  
Cheol Hyoun Ahn ◽  
Ye Kyun Kim ◽  
Sung Woon Cho ◽  
Hyung Koun Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Electrical Performance ◽  
Layer Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

Effects of Target Quality on Electrical Performance and Stability of In-Sn-Zn-O Thin-Film Transistors

2021 ◽  
Vol 42 (4) ◽  
pp. 529-532
Author(s):  
Zhendong Wu ◽  
Hengbo Zhang ◽  
Xiaolong Wang ◽  
Weisong Zhou ◽  
Lingyan Liang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Performance
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