20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs

2020 ◽  
Vol 1004 ◽  
pp. 899-904
Author(s):  
Akihiro Koyama ◽  
Yuji Kiuchi ◽  
Tomonori Mizushima ◽  
Kensuke Takenaka ◽  
Shinichiro Matsunaga ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Carrier Lifetime ◽  
Free Standing ◽  
Implantation Damage ◽  
Blocking Voltage ◽  
Effect Transistor ◽  
Effective Carrier

We demonstrate 20 kV-class 4H-SiC n-channel implantation and epitaxial (IE)-IGBTs having both low on-state voltage and high blocking characteristics. We fabricated n-IE-IGBTs on a (0001) silicon face with free-standing epitaxial layers. Effective carrier lifetime increased significantly from 0.9 μs to 9.6 μs by a lifetime enhancement process. We used the IE structure to suppress an increase of the surface p+-well concentration, reduce implantation damage at the p+-well, and reduce junction field effect transistor (JFET) region resistance by ion implantation as a counter doping. The n-IE-IGBT at 100 A/cm2 on-state voltage and specific differential on-resistance was 8.2 V and 36.9 mΩcm2, respectively, at room temperature with a 30 V gate voltage. The blocking voltage was 26.8 kV at 45.7 μA.

High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

2016 ◽  
Vol 109 (20) ◽  
pp. 203504 ◽  
Author(s):  
M. Syamsul ◽  
Y. Kitabayashi ◽  
D. Matsumura ◽  
T. Saito ◽  
Y. Shintani ◽  
...  
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
High Voltage Breakdown ◽  
Effect Transistor ◽  
Voltage Breakdown

Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

2018 ◽  
Vol 39 (1) ◽  
pp. 51-54 ◽  
Author(s):  
Mohd Syamsul ◽  
Nobutaka Oi ◽  
Satoshi Okubo ◽  
Taisuke Kageura ◽  
Hiroshi Kawarada
Keyword(s):  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

5A 1300V Trenched and Implanted 4H-SiC Vertical JFET

2012 ◽  
Vol 229-231 ◽  
pp. 824-827 ◽  
Author(s):  
Gang Chen ◽  
Xiao Feng Song ◽  
Song Bai ◽  
Li Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Gate Bias ◽  
Blocking Voltage ◽  
Drain Bias ◽  
Effect Transistor ◽  
Lift Off

A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with lift-off trenched and implanted method. Its blocking voltage exceeds 1300V at gate bias VG = -6V and forward drain current is in excess of 5A at gate bias VG = 3V and drain bias VD = 3V. The SiC VJFET device’s current density is 240A/cm2 at VG= 3V and VD = 3V, with related specific on-resistance 8.9mΩ•cm2. Further analysis reveals that the on-resistance depends greatly on ohmic contact resistance and the bonding spun gold. The specific on-resistance can be further reduced by improving the doping concentration of SiC channel epilayer and the device’s ohmic contact.

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

2016 ◽  
Vol 163 ◽  
pp. 115-118
Author(s):  
Jiao Wen ◽  
Qiang Liu ◽  
Chang Liu ◽  
Yize Wang ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Sensitivity ◽  
Effect Transistor

Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Metal Oxide ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Effect Transistor ◽  
Metal Oxide Silicon ◽  
Made In

Fabrication and Characterisation of 1200V 4H-SiC VJFET

2014 ◽  
Vol 716-717 ◽  
pp. 1434-1437
Author(s):  
Gang Chen ◽  
Song Bai ◽  
Ao Liu ◽  
Run Hua Huang ◽  
Yong Hong Tao ◽  
...  
Keyword(s):  
High Temperature ◽  
Continuous Improvement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Channel ◽  
Drain Current ◽  
Power Devices ◽  
Reverse Voltage ◽  
Blocking Voltage ◽  
Effect Transistor

Results are presented for the silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) fabricated based on in-house SiC epitaxial wafer suitable for power devices. We have demonstrated continuous improvement in blocking voltage, forward drain current under high temperature. The SiC VJFET device’s current density is 360 A/cm2 and current is 11 A at VG= 3 V and VD = 2 V, with related specific on-resistance 5.5 mΩ·cm2. The device exceeds 1200 V at gate bias VG = -10V. The current of the SiC VJFET device is 4 A and the reverse voltage is 1200V at the 200 °C high temperature.

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