Homoepitaxial Growth of 4H-SiC Thin Film Below 1000°C by Microwave Plasma Chemical Vapor Deposition
2002 ◽
Vol 389-393
◽
pp. 299-302
◽
2007 ◽
Vol 173
(2)
◽
pp. 965-971
◽
2007 ◽
Vol 22
(4)
◽
pp. 1112-1117
◽
1998 ◽
Vol 37
(Part 2, No. 4A)
◽
pp. L379-L381
◽
1989 ◽
Vol 50
(C5)
◽
pp. C5-667-C5-672