Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.39 ◽

2017 ◽

Vol 897 ◽

pp. 39-42 ◽

Cited By ~ 3

Author(s):

Ling Guo ◽

Koji Kamei ◽

Kenji Momose ◽

Hiroshi Osawa

Keyword(s):

High Resolution ◽

Epitaxial Growth ◽

Schottky Barrier ◽

Surface Defects ◽

Growth Conditions ◽

Adverse Impact ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Carbon Inclusion ◽

High Resolution Microscopy

In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.

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β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances ◽

10.1063/5.0053743 ◽

2021 ◽

Vol 11 (7) ◽

pp. 075312

Author(s):

Yu Xu ◽

Chunfu Zhang ◽

Pengru Yan ◽

Zhe Li ◽

Yachao Zhang ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Schottky Barrier Diodes

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Planarized solid‐state epitaxial growth of Si and its effect on Schottky barrier diodes

Applied Physics Letters ◽

10.1063/1.89980 ◽

1978 ◽

Vol 32 (3) ◽

pp. 177-179 ◽

Cited By ~ 5

Author(s):

T. M. Reith ◽

M. J. Sullivan

Keyword(s):

Solid State ◽

Epitaxial Growth ◽

Schottky Barrier ◽

Schottky Barrier Diodes

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Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.141 ◽

2012 ◽

Vol 717-720 ◽

pp. 141-144 ◽

Cited By ~ 6

Author(s):

Kazutoshi Kojima ◽

Satchiko Ito ◽

Akiyo Nagata ◽

Hajime Okumura

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Schottky Barrier ◽

Epitaxial Layer ◽

Flow Rate ◽

Growth Process ◽

High Yield ◽

Schottky Barrier Diodes ◽

Specular Surface ◽

Interfacial Dislocations

In this study, we struck a balance between specular surface morphology and polytype homogeneity on an epitaxial layer grown on 4H-SiC Si-face substrate with off angle less than 1degree by controlling the C/Si ratio with the SiH4 flow rate. Schottky barrier diodes fabricated on a grown epitaxial layer exhibited a blocking of voltage over 1000 V and an n value of less than 1.1 with a high yield of more than 80%. A substrate with a low off angle was found to have an advantage as regareds the stress that generates the interfacial dislocations at the epitaxial layer/substrate interface during the epitaxial growth process.

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