Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate
2017 ◽
Vol 897
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pp. 39-42
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Keyword(s):
In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.
2003 ◽
Vol 433-436
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pp. 197-200
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Vol 118
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pp. 596-603
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Vol 2014
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pp. 000058-000060
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pp. 225-228
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pp. 11635-11639
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pp. 2309-2319
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