Improvement of Homoepitaxial Layer Quality Grown on 4H-SiС Si-Face Substrate Lower than 1 Degree Off Angle

In this study, we struck a balance between specular surface morphology and polytype homogeneity on an epitaxial layer grown on 4H-SiC Si-face substrate with off angle less than 1degree by controlling the C/Si ratio with the SiH4 flow rate. Schottky barrier diodes fabricated on a grown epitaxial layer exhibited a blocking of voltage over 1000 V and an n value of less than 1.1 with a high yield of more than 80%. A substrate with a low off angle was found to have an advantage as regareds the stress that generates the interfacial dislocations at the epitaxial layer/substrate interface during the epitaxial growth process.

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Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.113 ◽

2009 ◽

Vol 615-617 ◽

pp. 113-116 ◽

Cited By ~ 8

Author(s):

Kazutoshi Kojima ◽

Hajime Okumura ◽

Kazuo Arai

Keyword(s):

Surface Morphology ◽

Epitaxial Growth ◽

Epitaxial Layer ◽

Flow Rate ◽

Growth Conditions ◽

Layer Surface ◽

Specular Surface ◽

Homoepitaxial Growth ◽

Angle Difference ◽

The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

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Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

MRS Proceedings ◽

10.1557/proc-742-k1.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

T. Kimoto ◽

K. Hashimoto ◽

K. Fujihira ◽

K. Danno ◽

S. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Schottky Barrier Diodes ◽

Homoepitaxial Growth ◽

Nitrogen Incorporation ◽

Impurity Doping ◽

Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.433-436.197 ◽

2003 ◽

Vol 433-436 ◽

pp. 197-200 ◽

Cited By ~ 7

Author(s):

Tsunenobu Kimoto ◽

Katsunori Danno ◽

Keiko Fujihira ◽

Hiromu Shiomi ◽

Hiroyuki Matsunami

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Schottky Barrier Diodes

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An Investigation on Barrier Inhomogeneities of 4H-SiC Schottky Barrier Diodes Induced by Surface Morphology and Traps

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2181391 ◽

2012 ◽

Vol 59 (3) ◽

pp. 694-699 ◽

Cited By ~ 22

Author(s):

Kung-Yen Lee ◽

Yan-Hao Huang

Keyword(s):

Surface Morphology ◽

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Barrier Inhomogeneities

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Evaluation and Reduction of Epitaxial Wafer Defects Resulting from Carbon-Inclusion Defects in 4H-SiC Substrate

Materials Science Forum ◽

10.4028/www.scientific.net/msf.897.39 ◽

2017 ◽

Vol 897 ◽

pp. 39-42 ◽

Cited By ~ 3

Author(s):

Ling Guo ◽

Koji Kamei ◽

Kenji Momose ◽

Hiroshi Osawa

Keyword(s):

High Resolution ◽

Epitaxial Growth ◽

Schottky Barrier ◽

Surface Defects ◽

Growth Conditions ◽

Adverse Impact ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Carbon Inclusion ◽

High Resolution Microscopy

In this study, we investigated the epitaxial surface defects resulting from the carbon-inclusion defects in 4H-SiC substrate. Most carbon-inclusion defects developed into one of three types of epitaxial surface defects under normal epitaxial growth conditions. Among them, we found a regular hexagonal pit by high-resolution microscopy, which we regarded as a large-pit defect, and which had an adverse impact on the reverse electrical characteristics of Schottky barrier diodes. Conversion of a carbon-inclusion defect to a large-pit defect or a triangular defect could be reduced by reducing the C/Si ratio.

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Advances in Multi- and Single-Wafer SiC Epitaxy for the Production and Development of Power Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.95 ◽

2008 ◽

Vol 600-603 ◽

pp. 95-98 ◽

Cited By ~ 1

Author(s):

Christian Hecht ◽

Bernd Thomas ◽

René A. Stein ◽

Peter Friedrichs

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Memory Effects ◽

Schottky Barrier Diodes ◽

Pin Diodes ◽

Power Diodes ◽

Homoepitaxial Growth ◽

Layer Deposition ◽

Reverse Blocking ◽

P Type

In this paper, we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system VP2000HW from Epigress with a capability of processing 7×3” or 6×100mm wafers per run in a new 100mm setup. Intra-wafer and wafer-to-wafer homogeneities of doping and thickness for full-loaded 6×100mm and 7×3” runs will be shown. Results on Schottky Barrier Diodes (SBD) processed in the multi-wafer system will be given. Furthermore, we show results for n- and p-type SiC homoepitaxial growth on 3”, 4° off-oriented substrates using a single-wafer hot-wall reactor VP508GFR from Epigress for the development of PiN-diodes with blocking voltages above 6.5 kV. Characteristics of n- and p-type epilayers and doping memory effects are discussed. 6.5 kV PiN-diodes were fabricated and electrically characterized. Results on reverse blocking behaviour, forward characteristics and drift stability will be presented.

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Fabrication of 3.4kV high voltage n-type 4H-SiC Schottky barrier diodes using thick epitaxial layers

MRS Proceedings ◽

10.1557/proc-640-h5.36 ◽

2000 ◽

Vol 640 ◽

Author(s):

Takashi Tsuji ◽

Hiroyuki Fujisawa ◽

Shinji Ogino ◽

Hidekazu Tsuchida ◽

Isaho Kamata ◽

...

Keyword(s):

Schottky Barrier ◽

High Voltage ◽

High Yield ◽

Epitaxial Layers ◽

Schottky Barrier Diodes ◽

Leakage Currents ◽

Bright Spots ◽

Blocking Voltage ◽

Voltage Region ◽

The Ideal

ABSTRACTFabrication and evaluation of high voltage n-type 4H-SiC Schottky barrier diodes (SBDs) using 27μm thick epitaxial layers were presented. To achieve the ideal value of the breakdown voltage, various parameters of junction termination extension (JTE) were investigated. We concluded that the termination of triple rings with the concentrations of 6×1017, 3×1017, 1.5×1017cm−1 outwardly was best with the simulations. The SBDs with this termination showed the blocking voltage up to 3.4kV, which is almost the ideal value. We also investigated the distribution of leakage currents at -600V in SBDs with various diameters up to 4mm. High yield was obtained in the SBDs with the diameters below 2mm. The SBDs with high leakage currents showed the excess currents in the low forward voltage region and lots of bright spots could be observed by optical beam induced current analysis.

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The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes

Physica B Condensed Matter ◽

10.1016/j.physb.2007.08.109 ◽

2007 ◽

Vol 401-402 ◽

pp. 41-43 ◽

Cited By ~ 2

Author(s):

Kung-Yen Lee ◽

Chih-Fang Huang ◽

Wenzhou Chen ◽

Michael A. Capano

Keyword(s):

Surface Morphology ◽

Schottky Barrier ◽

Schottky Barrier Diodes ◽

The Impact

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Formation and Reduction of Large Growth Pits on 100 mm 4° 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.193 ◽

2016 ◽

Vol 858 ◽

pp. 193-196 ◽

Cited By ~ 1

Author(s):

Yong Qiang Sun ◽

Gan Feng ◽

Jun Yong Kang ◽

Wei Ning Qian ◽

Li Ping Lv ◽

...

Keyword(s):

Growth Rate ◽

Surface Morphology ◽

Epitaxial Growth ◽

Process Parameters ◽

Growth Process ◽

High Quality ◽

Substrate Quality ◽

Large Growth

The large growth pits (LGPs) dependence of substrate quality, growth rate, and C/Si ratio have been discussed in the 4H-SiC epitaxial growth on 100 mm N-type 4H-SiC Si-face substrates misoriented by 4° toward [11-20] with a warm-wall planetary reactor. The formation and reduction of LGPs have been investigated by adjusting the growth process parameters. With the optimized process, the perfect surface morphology with lower LGPs density has been obtained on the high quality substrate.

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