Electrical/Optical Properties of Thin Transparent Oxide Films Deposited Using DC Magnetron Sputtering

2004 ◽  
Vol 449-452 ◽  
pp. 989-992
Author(s):  
Byung Soo So ◽  
Sung Moon Kim ◽  
Young Sin Pyo ◽  
Young Hwan Kim ◽  
Jin-Ha Hwang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Indium Tin Oxide ◽  
Laser Annealing ◽  
Dc Magnetron Sputtering ◽  
Excimer Laser Annealing ◽  
Plastic Substrates ◽  
Ito Thin Films

Amorphous indium tin oxide (ITO) thin films were grown on plastic substrates, PES (polyethersulfone) using low temperature DC magnetron sputtering. Various post-annealing techniques are attempted to optimize conductivity, transmittance, and roughness: i) conventional thermal annealing, ii) excimer laser annealing, and iii) UV irradiation. The electrical/optical properties were measured using Hall-measurement, DC 4-point resistance measurement, and UV spectrometry along with micro-structural characterization. Optimized UV treatment exhibits enhanced conductivity and smooth surface, compared to those of conventional thermal annealing and excimer laser annealing.

Microstructures and optical properties in crystallized a-Si:H multi-quantum wells using excimer laser annealing

1996 ◽  
Vol 198-200 ◽  
pp. 821-824 ◽  
Author(s):  
Xinfan Huang ◽  
Zhifeng Li ◽  
Wei Wu ◽  
Kunji Chen ◽  
Xiaoyuan Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

2004 ◽  
Vol 460 (1-2) ◽  
pp. 291-294 ◽  
Author(s):  
Wonsuk Chung ◽  
Michael O. Thompson ◽  
Paul Wickboldt ◽  
Daniel Toet ◽  
Paul G. Carey
Keyword(s):  
Excimer Laser ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Flexible Display ◽  
Xecl Excimer Laser

Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by R.F. Magnetron Sputtering

2001 ◽  
Vol 693 ◽  
Author(s):  
Man Young Sung ◽  
Woong-Je Sung ◽  
Yong-Il Lee ◽  
Chun-Il Park ◽  
Woo-Boem Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Energy Density ◽  
Excimer Laser Annealing ◽  
Zno Buffer Layer

Abstract:GaN thin films on sapphire were grown by RF magnetron sputtering with ZnO buffer layer. The tremendous mismatch between the lattices of GaN and sapphire can be partly overcome by the use of thin buffer layer of ZnO. The dependence of GaN film quality on ZnO buffer layer was investigated by X-ray diffraction(XRD). The properties of the sputtered GaN are strongly dependent on ZnO buffer layer thickness. The optimum thickness of ZnO buffer layer is around 30nm. Using XRD analysis, we have found the optimal substrate temperature which can grow high quality GaN thin film. In addition, the effect of excimer laser annealing(ELA) on structural and electrical properties of GaN thin films was investigated. The surface roughness and images according to the laser energy density were investigated by atomic force microscopy(AFM) and it was confirmed that the crystallization was improved by increasing laser energy density.

Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7349-7353 ◽  
Author(s):  
Dae-Jin Kim ◽  
Seong-Eun Park ◽  
Hyun-Jung Kim ◽  
Je-Kil Ryu ◽  
Byungsung O ◽  
...  
Keyword(s):  
Optical Properties ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Structural And Optical Properties ◽  
Excimer Laser Annealing ◽  
Line Beam

scholarly journals Crystallization of Amorphous Silicon via Excimer Laser Annealing and Evaluation of Its Passivation Properties

Energies ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 3335
Author(s):  
Sanchari Chowdhury ◽  
Jinsu Park ◽  
Jaemin Kim ◽  
Sehyeon Kim ◽  
Youngkuk Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Ultra Violet ◽  
Uv Laser ◽  
Excimer Laser Annealing ◽  
Cell Efficiency ◽  
Deep Uv

The crystallization of hydrogenated amorphous silicon (a-Si:H) is essential for improving solar cell efficiency. In this study, we analyzed the crystallization of a-Si:H via excimer laser annealing (ELA) and compared this process with conventional thermal annealing. ELA prevents thermal damage to the substrate while maintaining the melting point temperature. Here, we used xenon monochloride (XeCl), krypton fluoride (KrF), and deep ultra-violet (UV) lasers with wavelengths of 308, 248, and 266 nm, respectively. Laser energy densities and shot counts were varied during ELA for a-Si:H films between 20 and 80 nm thick. All the samples were subjected to forming gas annealing to eliminate the dangling bonds in the film. The ELA samples were compared with samples subjected to thermal annealing performed at 850–950 °C for a-Si:H films of the same thickness. The crystallinity obtained via deep UV laser annealing was similar to that obtained using conventional thermal annealing. The optimal passivation property was achieved when crystallizing a 20 nm thick a-Si:H layer using the XeCl excimer laser at an energy density of 430 mJ/cm2. Thus, deep UV laser annealing exhibits potential for the crystallization of a-Si:H films for TOPCon cell fabrication, as compared to conventional thermal annealing.

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