Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication

Electron Cyclotron ◽

Metal Insulator ◽

Chemical and electrical characterization of AlGaAs/GaAs heterojunction bipolar transistors treated by electron cyclotron resonance plasmas

Applied Physics Letters ◽

10.1063/1.107122 ◽

1992 ◽

Vol 60 (16) ◽

pp. 1996-1998 ◽

Cited By ~ 10

Author(s):

P. W. Li ◽

Q. Wang ◽

E. S. Yang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Cyclotron Resonance ◽

Bipolar Transistors ◽

Electron Cyclotron

Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.334 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 334-342 ◽

Cited By ~ 11

Author(s):

Kunio Saito ◽

Toshiro Ono ◽

Masaru Shimada ◽

Naoteru Shigekawa ◽

Takatomo Enoki

Keyword(s):

Cyclotron Resonance ◽

Electron Cyclotron ◽

Semiconductor Diode ◽

Metal Insulator ◽

Metal Insulator Semiconductor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

10.1116/1.3521383 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A901 ◽

Cited By ~ 10

Author(s):

A. Gómez ◽

H. Castán ◽

H. García ◽

S. Dueñas ◽

L. Bailón ◽

...

Keyword(s):

Negative Resistance ◽

Metal Insulator ◽

Semiconductor Structures ◽

High K

ChemInform Abstract: The Characterization of Electron Cyclotron Resonance Plasma Deposited Silicon Nitride and Silicon Oxide Films

ChemInform ◽

10.1002/chin.199002353 ◽

1990 ◽

Vol 21 (2) ◽

Author(s):

NGUYEN SON VAN NGUYEN SON VAN ◽

K. ALBAUGH

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Silicon Oxide ◽

Oxide Films ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Resonance Plasma

Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2011.05.055 ◽

2011 ◽

Vol 509 (31) ◽

pp. 8001-8007 ◽

Cited By ~ 63

Author(s):

V. Rajagopal Reddy ◽

M. Siva Pratap Reddy ◽

B. Prasanna Lakshmi ◽

A. Ashok Kumar

Keyword(s):

Metal Insulator ◽

Electrical properties of metal–insulator–semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580859 ◽

1997 ◽

Vol 15 (6) ◽

pp. 3143-3153 ◽

Cited By ~ 38

Author(s):

M. C. Hugon ◽

F. Delmotte ◽

B. Agius ◽

J. L. Courant

Keyword(s):

Silicon Nitride ◽

Electrical Properties ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Low Temperature Plasma ◽

Temperature Plasma ◽

Metal Insulator ◽

Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

Semiconductor Science and Technology ◽

10.1088/0268-1242/18/7/306 ◽

2003 ◽

Vol 18 (7) ◽

pp. 633-641 ◽

Cited By ~ 16

Author(s):

L Wang ◽

H S Reehal ◽

F L Mart nez ◽

E San Andr s ◽

A del Prado

Keyword(s):

Silicon Nitride ◽

Cyclotron Resonance ◽

Electron Cyclotron ◽

Electron Cyclotron Resonance Plasma ◽

Plasma Technique ◽

Silicon Nitride Films ◽

Resonance Plasma

Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

Applied Physics Letters ◽

10.1063/1.2720345 ◽

2007 ◽

Vol 90 (14) ◽

pp. 142114 ◽

Cited By ~ 16

Author(s):

Yohei Otani ◽

Yasuhiro Itayama ◽

Takuo Tanaka ◽

Yukio Fukuda ◽

Hiroshi Toyota ◽

...

Keyword(s):

Cyclotron Resonance ◽

Gate Insulator ◽

Metal Insulator ◽

Sputtering Deposition ◽

Plasma Nitridation ◽

Semiconductor Structures ◽

Deposition Techniques ◽

Resonance Plasma

Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6212 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6212-6215 ◽

Cited By ~ 3

Author(s):

Helena Castán ◽

Salvador Dueñas ◽

Juan Barbolla ◽

Estefanía Redondo ◽

Ignacio Mártil ◽

...

Keyword(s):

Nitrogen Content ◽

Metal Insulator ◽

Semiconductor Structures ◽

Low Nitrogen

Electrical Characterization of Deposited and Oxidized Ta2Si as Dielectric Film for SiC Metal-Insulator-Semiconductor Structures

Materials Science Forum ◽

10.4028/www.scientific.net/msf.457-460.845 ◽

2004 ◽

Vol 457-460 ◽

pp. 845-848 ◽

Cited By ~ 4

Author(s):

Amador Pérez-Tomás ◽

Dominique Tournier ◽

Josep Montserrat ◽

Narcis Mestres ◽

F. Sandiumenge ◽

...

Keyword(s):

Dielectric Film ◽

Metal Insulator ◽