Fabrication of Compact Ion Implanter for Silicon Carbide Devices

2005 ◽  
Vol 483-485 ◽  
pp. 605-608
Author(s):  
S. Mitani ◽  
Seiji Yamaguchi ◽  
S. Furukawa ◽  
T. Nakata ◽  
Yuji Horino ◽  
...  
Keyword(s):  
Large Scale ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Amorphous Layer ◽  
Ion Source ◽  
High Acceleration ◽  
Infrared Spectrometer ◽  
Accelerator Tube ◽  
Acceleration Voltage ◽  
Secondary Ion

Most of the ion implanter is large scale, high acceleration voltage and expensive. For research and development, such a huge implanter is not required. Our motivation is to make desktop type ion implanter for SiC device. We report the fabrication of a compact 100 kV ion implanter. In order to miniaturize the equipment, an ion source, an accelerator tube and a main chamber were vertically arranged. We implanted Argon (Ar) and Nitrogen (N) ions to 6H-SiC substrate and the implanted 6H-SiC substrates were characterized by Fourier Transform Infrared Spectrometer (FTIR), Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS). In this report, concept of desktop ion implanter, evaluation of implanted substrate and its device application are presented. In order to characterize capability, with using the newly made compact ion implanter, it was possible to make implantation on SiC to get amorphous layer suitable for deices.

Aspects of high-resolution imaging with a scanning ion microprobe

1986 ◽  
Vol 44 ◽  
pp. 750-751
Author(s):  
R. Levi-Setti ◽  
J. M. Chabala ◽  
Y. L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Chromatic Aberration ◽  
Ion Source ◽  
Ion Microprobe ◽  
Emission Pattern ◽  
Intrinsic Resolution ◽  
Resolution Imaging ◽  
20 Nm ◽  
Secondary Ion

We have shown the feasibility of 20 nm lateral resolution in both topographic and elemental imaging using probes of this size from a liquid metal ion source (LMIS) scanning ion microprobe (SIM). This performance, which approaches the intrinsic resolution limits of secondary ion mass spectrometry (SIMS), was attained by limiting the size of the beam defining aperture (5μm) to subtend a semiangle at the source of 0.16 mr. The ensuing probe current, in our chromatic-aberration limited optical system, was 1.6 pA with Ga+ or In+ sources. Although unique applications of such low current probes have been demonstrated,) the stringent alignment requirements which they imposed made their routine use impractical. For instance, the occasional tendency of the LMIS to shift its emission pattern caused severe misalignment problems.

Calibration Method for Elemental Quantification

2000 ◽  
Vol 6 (S2) ◽  
pp. 536-537
Author(s):  
C. B. Vartuli ◽  
F. A. Stevie ◽  
L. A. Giannuzzi ◽  
T. L. Shofner ◽  
B. M. Purcell ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Peak Concentration ◽  
Energy Dispersive Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Calibration Method ◽  
High Dose ◽  
High Concentration ◽  
Borophosphosilicate Glass ◽  
Secondary Ion

Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations between analysis tools can lead to values that differ considerably, especially for trace elements. By creating a standard with an exact trace composition, many of the errors inherent in EDS quantification measurements can be eliminated.The standards are created by high dose ion implantation. For ions implanted into silicon, a dose of 1E16 cm-2 results in a peak concentration of approximately 1E21 cm-3 or 2% atomic. The exact concentration can be determined using other methods, such as Rutherford Backscattering Spectrometry (RBS) or Secondary Ion Mass Spectrometry (SIMS). For this study, SIMS analyses were made using a CAMECA IMS-6f magnetic sector. Measurement protocols were used that were developed for high concentration measurements, such as B and P in borophosphosilicate glass (BPSG).

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

A test apparatus for secondary ion mass spectrometry

1983 ◽  
Vol 61 (4) ◽  
pp. 535-542 ◽  
Author(s):  
N. Klaus ◽  
J. D. Brown
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Low Cost ◽  
Ion Source ◽  
Channel Electron Multiplier ◽  
Electron Multiplier ◽  
Spherical Source ◽  
Ion Mass Spectrometry ◽  
Cylindrical Source ◽  
Secondary Ion

A low cost test device for secondary ion mass spectrometry (SIMS) components is described. It consists of a turbomolecular pumped vessel containing an insulated sample stage on an x−y manipulator, extraction optics, quadrupole mass filter, and channel electron multiplier. The construction and characteristics of a cylindrical and a spherical saddlefield ion source are described. The output of the cylindrical source is 10−4 A cm−2 whereas that of the spherical source is in the order of 10−3 A cm−2 at voltages up to 9 kV and at a beam divergence of 4°.

Germanium Redistribution Phenomena in the Synthesis of SiGe Layers

1996 ◽  
Vol 439 ◽  
Author(s):  
C. J. Patel ◽  
J. B. Butcher
Keyword(s):  
Point Defects ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Debye Model ◽  
Mean Square ◽  
Uphill Diffusion ◽  
Implantation Temperature ◽  
Influence Diffusion ◽  
Substrate Temperatures ◽  
Secondary Ion

AbstractA unique germanium redistribution phenomenon occurs in the synthesis of SiGe by 74Ge+, ion implantation. A number of silicon samples were implanted with 74Ge+ ion using a range of substrate temperatures (R.T. to 600°C) with different germanium fluences (1.5 × 1016 cm-2 to 4 × 1016 cm-2) and implantation energies (100keV - 180KeV). Samples were germanium profiled using Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS).The experimental results show that the peak range of the germanium implant increases progressively above 150°C and a shift of 40nm in the peak germanium range was measured for a sample implanted at 600°C. The ‘hot’ implants have an extended tail profile contrary to the Debye model for root-mean-square deviations of the lattice atoms from their equilibrium sites which should ideally contribute to dechanneling. The data suggest strongly that dynamic annealing related diffusion (DARD) processes exist, whereby mobile non-equilibrium point defects influence diffusion to take place at the elevated implantation temperature. The SIMS spectra of samples implanted with high Ge fluences at elevated temperature show “uphill” diffusion.

scholarly journals New Cs sputter ion source with polyatomic ion beams for secondary ion mass spectrometry applications

2007 ◽  
Vol 78 (8) ◽  
pp. 085101 ◽  
Author(s):  
S. F. Belykh ◽  
V. V. Palitsin ◽  
I. V. Veryovkin ◽  
A. P. Kovarsky ◽  
R. J. H. Chang ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Ion Beams ◽  
Ion Source ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Secondary ion imaging microanalysis

1989 ◽  
Vol 47 ◽  
pp. 8-9
Author(s):  
R. Levi-Setti ◽  
J. M. Chabala ◽  
C Girod-Hallegot ◽  
P. Hallegot ◽  
Y. L. Wang
Keyword(s):  
Metal Ion ◽  
Secondary Ion Mass Spectrometry ◽  
Sample Surface ◽  
Biological Tissues ◽  
Ion Source ◽  
Ion Imaging ◽  
Research Areas ◽  
Interdisciplinary Problems ◽  
20 Nm ◽  
Secondary Ion

The goals of high spatial resolution and high elemental sensitivity in the imaging microanalysis of biological tissues and materials have, to a large extent, been attained by using the method of secondary ion mass spectrometry (SIMS) following bombardment of a sample surface by a focused beam of heavy ions. The instrument that we will discuss and which has achieved these goals is a scanning ion microprobe originally developed in collaboration with Hughes Research Laboratories (UC-HRL SIM). It utilizes a 40-60 keV Ga+ probe, extracted from a point-like liquid metal ion source, that can be focused to a spot as small as 20 nm in diameter. During the past five years, much effort has been devoted to a reappraisal of well known SIMS methodologies in regard to their applicability to a range of lateral resolution (20-1000 nm) previously unexplored. Furthermore, of particular concern has been the identification of research areas whose demands could most profitably be matched by the performance of this new class of microprobes. The results of this effort are contained in over 21 topical publications and 14 review articles covering both instrumental aspects of our development and applications to a variety of interdisciplinary problems.

Implantation and Activation of High Concentrations of Boron and Phosphorus in Germanium

2005 ◽  
Vol 891 ◽  
Author(s):  
Yong Seok Suh ◽  
Malcolm S. Carroll ◽  
Roland A. Levy ◽  
Gabriele Bisognin ◽  
Davide De Salvador ◽  
...  
Keyword(s):  
Peak Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
Nuclear Reaction Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Concentrations ◽  
X Ray Absorption ◽  
Secondary Ion ◽  
Activation Behavior

ABSTRACTThe effect of increasing boron or phosphorus implant dose (i.e., 5×1013-5×1016 cm−2) and subsequent annealing (400-600°C for 3 hrs in N2) on the activation, diffusion and structure of germanium is studied in this work. The peak concentration of implant dose is ∼ 2×1021 cm−3. Secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), high resolution X-ray diffraction (HRXRD), X-ray absorption fine structure (XAFS), Rutherford backscattering spectrometry (RBS), and nuclear reaction analysis (NRA) were used to characterize the implant and activation behavior. Boron is found to have a high solid solubility (i.e., > 2×1020 cm−3), even immediately after implant; while in contrast, phosphorus is limited to ∼ 1–2×1019 cm−3. Diffusion of phosphorus is also extremely extrinsic, while boron is practically immobile.

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