SiC and III-Nitride Growth in Hot-Wall CVD Reactor
2005 ◽
Vol 483-485
◽
pp. 61-66
◽
Keyword(s):
The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.
Keyword(s):
1990 ◽
Vol 48
(1)
◽
pp. 168-169
Keyword(s):
2015 ◽