Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

2018 ◽  
Vol 924 ◽  
pp. 104-107
Author(s):  
Wei Li Lu ◽  
Jia Li ◽  
Yu Long Fang ◽  
Jia Yun Yin ◽  
Zhi Hong Feng
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
High Throughput ◽  
High Voltage ◽  
High Performance ◽  
Etching Process ◽  
Power Devices ◽  
High Quality ◽  
Recent Advances

High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

4H-SIC Dmosfets for High Frequency Power Switching Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Sei-Hyung Ryu ◽  
Anant K. Agarwal ◽  
James Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
High Speed ◽  
High Performance ◽  
High Frequency Power ◽  
Power Devices ◽  
Power Switching ◽  
High Speed Switching ◽  
Unipolar Devices ◽  
Very High ◽  
Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

scholarly journals Transformerless Quasi-Z-Source Inverter to Reduce Leakage Current for Single-Phase Grid-Tied Applications

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 312 ◽  
Author(s):  
Woo-Young Choi ◽  
Min-Kwon Yang
Keyword(s):  
Leakage Current ◽  
Power Efficiency ◽  
High Performance ◽  
Single Phase ◽  
Power Devices ◽  
Common Mode Voltage ◽  
Control Scheme ◽  
Frequency Components ◽  
The Common ◽  
Current Reduction

The conventional single-phase quasi-Z-source (QZS) inverter has a high leakage current as it is connected to the grid. To address this problem, this paper proposes a transformerless QZS inverter, which can reduce the leakage current for single-phase grid-tied applications. The proposed inverter effectively alleviates the leakage current problem by removing high-frequency components for the common-mode voltage. The operation principle of the proposed inverter is described together with its control strategy. A control scheme is presented for regulating the DC-link voltage and the grid current. A 1.0 kW prototype inverter was designed and tested to verify the performance of the proposed inverter. Silicon carbide (SiC) power devices were applied to the proposed inverter to increase the power efficiency. The experimental results showed that the proposed inverter achieved high performance for leakage current reduction and power efficiency improvement.

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

2011 ◽  
Vol 679-680 ◽  
pp. 59-62 ◽  
Author(s):  
Stefano Leone ◽  
Yuan Chih Lin ◽  
Franziska Christine Beyer ◽  
Sven Andersson ◽  
Henrik Pedersen ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Doping Concentration ◽  
Epitaxial Layers ◽  
Power Devices ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Basal Plane Dislocation ◽  
Background Doping ◽  
Quality Material

The epitaxial growth at 100 µm/h on on-axis 4H-SiC substrates is demonstrated in this study. Chloride-based CVD, which has been shown to be a reliable process to grow SiC epitaxial layers at rates above 100 µm/h on off-cut substrates, was combined with silane in-situ etching. A proper tuning of C/Si and Cl/Si ratios and the combination of different chlorinated precursors resulted in the homoepitaxial growth of 4H-SiC on Si-face substrates at high rates. Methyltrichlorosilane, added with silane, ethylene and hydrogen chloride were employed as precursors to perform epitaxial growths resulting in very low background doping concentration and high quality material, which could be employed for power devices structure on basal-plane-dislocation-free epitaxial layers.

SiC and III-Nitride Growth in Hot-Wall CVD Reactor

2005 ◽  
Vol 483-485 ◽  
pp. 61-66 ◽  
Author(s):  
Erik Janzén ◽  
Peder Bergman ◽  
Örjan Danielsson ◽  
Urban Forsberg ◽  
Christer Hallin ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Vertical Temperature ◽  
High Quality ◽  
Temperature Homogeneity

The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

scholarly journals The role and impact of high throughput biomimetic measurements in drug discovery

ADMET & DMPK ◽  
2018 ◽  
Vol 6 (2) ◽  
pp. 74-84 ◽  
Author(s):  
Shenaz Bunally ◽  
Robert J Young
Keyword(s):  
High Performance Liquid Chromatography ◽  
Liquid Chromatography ◽  
Drug Discovery ◽  
Physicochemical Property ◽  
Physicochemical Properties ◽  
High Throughput ◽  
High Performance ◽  
Cost Effective ◽  
High Quality ◽  
The Right

During the early phase of drug discovery, it is becoming increasingly important to acquire the full physicochemical profile of molecules. For this purpose, there is a strong interest in developing efficient and cost-effective platforms for fast and reliable measurements of physicochemical properties. We have developed an automated physchem platform which ensures that consistent, comprehensive, and high-quality physicochemical property measurements and derived property information for 100's of compounds per week are available alongside potency data at the right time to guide compound progression decisions. We discuss the routine assessments of biomimetic properties using high throughput automated high-performance liquid chromatography (HPLC) platforms, with details of the methods and hardware employed, also with illustrations of the quality and impact of the data generated.

Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction

2016 ◽  
Vol 858 ◽  
pp. 119-124 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Masahiko Ito ◽  
Tetsuya Miyazawa ◽  
Hideyuki Uehigashi ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Throughput ◽  
Growth Rates ◽  
High Speed ◽  
Stacking Faults ◽  
High Quality ◽  
Defect Reduction ◽  
Induced Defects ◽  
Defect Densities ◽  
Gas Supply

This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertical single-wafer type SiC epitaxial reactor is employed and high-speed wafer rotation is confirmed as effective, not only for enhancing growth rates without increasing the source gas supply but also improving thickness and doping uniformities. The current levels of reducing particle-induced defects, in-grown stacking faults, basal plane dislocations and the Z1/2 center (carbon vacancies) are reviewed.

Recent advances in 4H-SiC epitaxy for high-voltage power devices

2018 ◽  
Vol 78 ◽  
pp. 2-12 ◽  
Author(s):  
Hidekazu Tsuchida ◽  
Isaho Kamata ◽  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Recent Advances

SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices

2008 ◽  
Vol 600-603 ◽  
pp. 77-82 ◽  
Author(s):  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
Joseph J. Sumakeris ◽  
C. Hallin ◽  
Elif Berkman ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
High Throughput ◽  
Low Cost ◽  
Wide Bandgap ◽  
High Quality ◽  
Power Switching ◽  
Recent Emergence ◽  
Switching Devices

The development of SiC bulk and epitaxial materials is reviewed with an emphasis on epitaxial growth using high-throughput, multi-wafer, vapor phase epitaxial (VPE) warm-wall planetary reactors. It will be shown how the recent emergence of low-cost high-quality 100-mm diameter epitaxial SiC wafers is enabling the economical production of advanced wide-bandgap Power–Switching devices.

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