Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

2006 ◽  
Vol 527-529 ◽  
pp. 803-806 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Junji Senzaki ◽  
Makoto Katou ◽  
Shinsuke Harada ◽  
Mitsuo Okamoto ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Annealing Temperature ◽  
Peak Temperature ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Temperature Distributions ◽  
Induction Annealing ◽  
The Mean ◽  
Ion Implanted

We perform rapid thermal annealing (RTA) on areas as large as 2-inch φ (diameter) at high temperature using the hybrid super RTA (HS-RTA) equipment. The HS-RTA equipment consists of an infrared annealing unit and a RF induction annealing unit in order to uniformly anneal over 2-inch φ susceptor. As a result of annealing by the HS-RTA equipment, the temperature is elevated from RT to peak temperature (~1800°C) for less than 1 min, remain stable at annealing temperature for 30s and falls from peak temperature to 1000°C within less than 20s. The temperature distributions on a 2-inch φ susceptor are ±10°C, ±33°C and ±55°C at 1565°C, 1671°C and 1752°C, respectively. Phosphorus (P) ion implanted silicon carbide (SiC) samples are used to evaluate the performance of the HS-RTA equipment. The five implanted samples placed on the 2-inch φ susceptor are annealed for 30s at 1565°C, 1671°C and 1752°C. The mean sheet resistances of the 5 samples annealed at 1565°C, 1671°C and 1752°C are 92.6Ω/􀀀, 82.6Ω/􀀀 and 75.5Ω/􀀀, respectively. The sheet resistance uniformities are 9.9%, 7.9% and 9.3%. The average roughness (Ra) is calculated from 10 μm square Atomic Force Microscopy (AFM) image. Ra values of the samples annealed at 1565°C, 1671°C and 1752°C are 2.399 nm, 2.408 nm and 3.282 nm, respectively.

Size decrease of detonation nanodiamonds by air annealing investigated by AFM

MRS Advances ◽  
2016 ◽  
Vol 1 (16) ◽  
pp. 1067-1073 ◽  
Author(s):  
Stepan Stehlik ◽  
Daria Miliaieva ◽  
Marian Varga ◽  
Alexander Kromka ◽  
Bohuslav Rezek
Keyword(s):  
Size Distribution ◽  
Annealing Temperature ◽  
Detonation Nanodiamonds ◽  
Particle Analysis ◽  
Detonation Synthesis ◽  
Size Distributions ◽  
Force Microscopy ◽  
Atomic Force ◽  
Mean Size ◽  
The Mean

ABSTRACTNanodiamonds (NDs) represent a novel nanomaterial applicable from biomedicine to spintronics. Here we study ability of air annealing to further decrease the typical 5 nm NDs produced by detonation synthesis. We use atomic force microscopy (AFM) with sub-nm resolution to directly measure individual detonation nanodiamonds (DNDs) on a flat Si substrate. By means of particle analysis we obtain their accurate and statistically relevant size distributions. Using this approach, we characterize evolution of the size distribution as a function of time and annealing temperature: i) at constant time (25 min) with changing temperature (480, 490, 500°C) and ii) at constant temperature (490°C) with changing time (10, 25, 50 min). We show that the mean size of DNDs can be controllably reduced from 4.5 nm to 1.8 nm without noticeable particle loss and down to 1.3 nm with 36% yield. By air annealing the size distribution changes from Gaussian to lognormal with a steep edge around 1 nm, indicating instability of DNDs below 1 nm.

Self-Assembled TPPS4 Nanostructures Revealed by Atomic Force Microscopy

2004 ◽  
Vol 97-98 ◽  
pp. 191-194 ◽  
Author(s):  
R. Augulis ◽  
Valentinas Snitka ◽  
R. Rotomskis
Keyword(s):  
Atomic Force Microscopy ◽  
Spatial Structure ◽  
Water Soluble ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Mean ◽  
J Aggregates ◽  
Self Assembled ◽  
Experimental Findings

Meso-tetra (4-sulfonatophenyl) porphine (TPPS4) is water-soluble tetrapyrrolic dye, which forms self assembled nanostructures – J-aggregates under appropriate conditions. It was shown, that such aggregates survive dried on the substrate. The spatial structure of TPPS4 Jaggregates formed in acidic aqueous solutions and dispersed on silicon substrates was analyzed by means of atomic force microscopy (AFM). The stripe-like structures were observed. The size of individual stripes ranged 4,5×40×(200-1000) nm (H×W×L). The width and height was almost the same for all stripes and independent upon the concentration of the solution, however the length was statistically distributed and the mean length increased with increasing concentration of initial TPPS4 solution. At higher concentrations such stripes stacked into thicker fibers containing 2-20 stripes. Such fibers branched and formed large bush-like structures sized up to several millimeters. According to experimental findings the model of mesostructures, formed by TPPS4 J-aggregates, was proposed.

Surface Roughness

2019 ◽  
pp. 28-53
Author(s):  
C. Mathew Mate ◽  
Robert W. Carpick
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Contact Friction ◽  
Radius Of Curvature ◽  
Roughness Parameters ◽  
Force Microscopy ◽  
Fractal Surfaces ◽  
Atomic Force ◽  
The Mean ◽  
Physical Phenomena

When two surfaces are brought into contact, they first touch where the summits of the surface asperities make contact. Consequently, surface roughness or topography strongly influences those physical phenomena associated with contact: friction, adhesion, and wear. This chapter discusses techniques for measuring the roughness of surfaces and the parameters frequently used to characterize this roughness. As atomic force microscopy (AFM) and optical interferometry are currently the predominant tools for characterizing roughness, these techniques are discussed at some length. Examples are given for determining not only the standard roughness parameters (the standard deviation of surface heights, the mean radius of curvature of asperity summits, waviness, and the average and rms of surface heights), but also for determining the surface roughness power spectrum, which has gained importance in recent tribology theories. The topography of self-affine fractal surfaces is also discussed along with the tribological importance of these surfaces.

scholarly journals Atomic force microscopy analysis of alkali textured silicon substrates for solar cell applications

2018 ◽  
Vol 6 (1) ◽  
pp. 13
Author(s):  
Adebayo Fashina ◽  
Kenneth Adama ◽  
Lookman Abdullah ◽  
Chukwuemeka Ani ◽  
Oluwaseun Oyewole ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Light Trapping ◽  
Surface Texturing ◽  
Etching Time ◽  
Silicon Substrates ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

In this paper, the surface morphology of textured silicon substrates is explored. Prior to the surface morphology analysis, textured silicon substrates were obtained by KOH anisotropic texturing of polished silicon wafers. This was achieved by investigating of the dependence surface texturing on the process parameters; etchant concentration, etching time and temperature. The surface morphology of the textured silicon samples was obtained using atomic force microscopy that was operated in the tapping mode. The resulting atomic force microscopy (AFM) images were analyzed using the Nanoscope and Gwyddion software packages. The AFM analysis revealed more surface details such as the depth, roughness, section, and step height analysis. The analysis was limited to a length scale of a few micrometers, which carefully reveals the number of individualities of the initial stages of pyramid growth. The average roughness was found to be 593nm for an optimally textured silicon wafer. The implications of the study are then discussed for potential light trapping application in silicon solar cells.

ULTRAHIGH VACUUM ATOMIC FORCE MICROSCOPY: TRUE ATOMIC RESOLUTION

1997 ◽  
Vol 04 (05) ◽  
pp. 1025-1029 ◽  
Author(s):  
R. LÜTHI ◽  
E. MEYER ◽  
M. BAMMERLIN ◽  
A. BARATOFF ◽  
L. HOWALD ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Ultrahigh Vacuum ◽  
Tunneling Current ◽  
Atomic Resolution ◽  
Restricted Range ◽  
Dissipation Energy ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Mean ◽  
Reconstructed Surface

In this note we report the first observation of salient features of the Si(111)(7×7) reconstructed surface across monatomic steps by dynamic atomic force microscopy (AFM) in ultrahigh vacuum (UHV). Simultaneous measurements of the resonance frequency shift Δf of the Si cantilever and of the mean tunneling current [Formula: see text] from the cleaned Si tip indicate a restricted range for stable imaging with true atomic resolution. The corresponding characteristics vs. distance reveal why feedback control via Δf is problematic, whereas it is as successful as in conventional STM via [Formula: see text]. Furthermore, local dissipation (energy loss of 10-14 W) through individual atoms is observed and explained by the coupling of the surface atoms to phonons.

scholarly journals Comparative effect of three polishing systems on porcelain surface roughness after orthodontic bracket debonding and composite resin removal: An atomic force microscopy

2019 ◽  
Vol 9 ◽  
pp. 223-229
Author(s):  
Faeze Qabel ◽  
Riehane Talaei ◽  
Saeedeh Saeedi ◽  
Raheb Ghorbani ◽  
Nazila Ameli
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Composite Resin ◽  
Cost Effective ◽  
Orthodontic Bracket ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Mean ◽  
Level Of Significance ◽  
One Way Anova

Purpose: Porcelain polishing after orthodontic bracket debonding and resin removal is imperative to eliminate surface roughness and minimize the risk of plaque accumulation, periodontal disease, and porcelain discoloration. This study aimed to assess the effect of three polishing systems on porcelain surface roughness after orthodontic bracket debonding. Materials and Methods: Thirty porcelain blocks were divided into three groups. Surface roughness of the samples was first measured using atomic force microscopy (AFM) and recorded as baseline. Orthodontic brackets were bonded to blocks by composite resin. After bracket debonding, resin remnants were removed by tungsten carbide bur. The blocks were then polished with Sof-Lex discs, Meisinger, and Jota porcelain polishing kit. Surface roughness was measured again using AFM. The Shapiro–Wilk test, one-way ANOVA, and Tukey’s post hoc test were used for data analysis through SPSS version 18.0. Level of significance was set at 5%. Results: The mean change in surface roughness after polishing with Jota kit (56.6 nm) was significantly greater than that compared to Sof-Lex discs (10.7 nm) (P = 0.003) and Meisinger kit (26.6 nm) (P = 0.024). The mean change in surface roughness was not significantly different between Sof-Lex and Meisinger groups. Surface roughness significantly increased in all three groups (P < 0.05). Conclusion: Meisinger polishing kit and Sof-Lex discs were not significantly different in terms of the resultant surface roughness. Thus, the conventional use of Sof-Lex discs seems to be more cost-effective due to their lower cost.

Characterization of Healthy and Fluorotic Enamel by Atomic Force Microscopy

2010 ◽  
Vol 16 (5) ◽  
pp. 531-536 ◽  
Author(s):  
Verónica Zavala-Alonso ◽  
Gabriel A. Martínez-Castanon ◽  
Nuria Patiño-Marín ◽  
Humberto Terrones ◽  
Kenneth Anusavice ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Depth Profile ◽  
Positive Association ◽  
Clinical Findings ◽  
Mean Values ◽  
Force Microscopy ◽  
Atomic Force ◽  
The Mean

AbstractThe aim was to characterize the external structure, roughness, and absolute depth profile (ADP) of fluorotic enamel compared with healthy enamel. Eighty extracted human molars were classified into four groups [TFI: 0, control (C); 1–3, mild (MI); 4–5, moderate (MO); 6–9, severe fluorosis (S)] according to the Thylstrup-Fejerskov Index (TFI). All samples were analyzed by atomic force microscopy.The mean values of enamel surface roughness (ESR) in nm were: Group C, 92.6; Group MI, 188.8; Group MO, 246.9; and Group S, 532.2. The mean values of absolute depth profile in nm were: C, 1,065.7; MI, 2,360.7; MO, 2,536.7; and S, 6,146.2. The differences between mean ESR and mean ADP among groups were statistically significant (p < 0.05). This structural study confirms at the nanometer level that there is a positive association between fluorosis severity, ESR, and ADP, and there is an association with the clinical findings of fluorosis measured by TFI as well.

Germanium Layer Exfoliation by Ion-Cut Processes

2007 ◽  
Vol 994 ◽  
Author(s):  
Reinhart Job ◽  
Wolfgang Düngen
Keyword(s):  
Raman Spectroscopy ◽  
Atomic Force Microscopy ◽  
Tensile Stress ◽  
Structure Formation ◽  
Annealing Temperature ◽  
Hydrogen Annealing ◽  
Force Microscopy ◽  
Air Atmosphere ◽  
Atomic Force ◽  
Germanium Layer

Abstract(100)–oriented Czochralski germanium (Cz Ge) wafers were implanted with hydrogen at en-ergies up to 100 keV (related to H+) at a doses of D = 4·106 H+/cm2. Post-hydrogen annealing in normal air atmosphere on a hotplate was employed for 10 min at various temperatures between 350 °C and 600 °C to investigate the samples with regard to blistering and layer exfoliation having in mind the Smart-Cut™ technology for GOI structure formation. The generation and evolution of blisters and craters (“exploded” blisters demonstrating layer exfoliation) were investigated in dependence on the annealing temperature by atomic force microscopy and μ-Raman spectroscopy. The latter method points out the appearance of strong tensile stress upon H+ implantation and subsequent annealing. If the tensile stress exceeds about 1.2 GPa layer exfoliation occurs.

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