TEM Investigation of Dislocations in Hot Deformed Mg-Al-Zn Alloy

2007 ◽  
Vol 550 ◽  
pp. 259-264 ◽  
Author(s):  
A.Ya. Kochubey ◽  
Vladimir Serebryany ◽  
V.N. Timofeev
Keyword(s):  
Dark Field ◽  
Slip Systems ◽  
Compression Tests ◽  
Cold Compression ◽  
Weak Beam ◽  
Different Types ◽  
Beam Method ◽  
Hot Rolled ◽  
Zn Alloy ◽  
Transmission Microscope

Ductility of Mg – alloys is linked to a shortage of independent slip systems. Basaltextured samples of Mg-Al-Zn alloy are examined for presence of dislocations of different types after hot compression tests of cast samples and cold compression tests of hot-rolled samples. The JEM-1000, electron transmission microscope with an accelerating voltage of 750 kV using a dark field–weak beam method of observation and the g·b=0 invisibility criterion as a basic method of the analysis of Burgers vectors, is used to analyse the samples. Dislocations with Burgers vectors <a>, [c] and <a+c> are found. The results are used to evaluate the dislocation density and determine the possible dislocation reactions.

scholarly journals Identification of Slip Systems in Silicon Nitride by Weak-beam Method

Materia Japan ◽  
1998 ◽  
Vol 37 (12) ◽  
pp. 982-982
Author(s):  
Koichi Kawahara ◽  
Sadahiro Tsurekawa ◽  
Hideharu Nakashima
Keyword(s):  
Silicon Nitride ◽  
Slip Systems ◽  
Weak Beam ◽  
Beam Method

scholarly journals A new technique for measuring the separation of closely spaced dislocations using residual-contrast conditions

1994 ◽  
Vol 52 ◽  
pp. 902-903
Author(s):  
J. E. Angelo ◽  
M. J. Mills
Keyword(s):  
Field Method ◽  
Dark Field ◽  
Foil Thickness ◽  
High Resolution Imaging ◽  
Bulk Materials ◽  
Weak Beam ◽  
Beam Method ◽  
True Position ◽  
Resolution Imaging ◽  
A New Technique

In order to measure the spacing of closely spaced dislocations, a method with sufficient spatial resolution must be used. High resolution imaging provides one method of determining the spacing of paired dislocations, but care must be taken since these authors have shown that thin film effects can give rise to structures not present in bulk materials. To date, the most widely used method of determining the spacing of paired dislocations is the weak-beam dark field method. This method has proved extremely useful in the study of many systems, see Cockayne3 for a review. One of the difficulties of the weak-beam method is that the observed peak positions do not generally correspond to the actual position of the partial dislocation cores. Correlation of the peak positions with the true position depends on the deviation parameter, foil thickness, and position of the dislocations within the foil.

Two Investigations into Grain Boundary Structure

1977 ◽  
Vol 35 ◽  
pp. 688-691
Author(s):  
P. Humble
Keyword(s):  
Grain Boundary ◽  
Dark Field ◽  
Boundary Structure ◽  
Boundary Dislocation ◽  
Bright Field ◽  
Intrinsic Structure ◽  
Weak Beam ◽  
Grain Boundary Structure ◽  
Independent Information ◽  
Diffraction Patterns

There has been sustained interest over the last few years into both the intrinsic (primary and secondary) structure of grain boundaries and the extrinsic structure e.g. the interaction of matrix dislocations with the boundary. Most of the investigations carried out by electron microscopy have involved only the use of information contained in the transmitted image (bright field, dark field, weak beam etc.). Whilst these imaging modes are appropriate to the cases of relatively coarse intrinsic or extrinsic grain boundary dislocation structures, it is apparent that in principle (and indeed in practice, e.g. (1)-(3)) the diffraction patterns from the boundary can give extra independent information about the fine scale periodic intrinsic structure of the boundary.In this paper I shall describe one investigation into each type of structure using the appropriate method of obtaining the necessary information which has been carried out recently at Tribophysics.

Electron Microscopy of Shock Loaded Polycrystalline Beryllium

1974 ◽  
Vol 32 ◽  
pp. 506-507 ◽  
Author(s):  
J. M. Galbraith ◽  
L. E. Murr ◽  
A. L. Stevens
Keyword(s):  
Electron Microscopy ◽  
Wave Propagation ◽  
Structural Change ◽  
Single Crystal ◽  
Diffraction Pattern ◽  
Shock Loading ◽  
Slip Systems ◽  
Compression Tests ◽  
X Ray Diffraction ◽  
X Ray

Uniaxial compression tests and hydrostatic tests at pressures up to 27 kbars have been performed to determine operating slip systems in single crystal and polycrystal1ine beryllium. A recent study has been made of wave propagation in single crystal beryllium by shock loading to selectively activate various slip systems, and this has been followed by a study of wave propagation and spallation in textured, polycrystal1ine beryllium. An alteration in the X-ray diffraction pattern has been noted after shock loading, but this alteration has not yet been correlated with any structural change occurring during shock loading of polycrystal1ine beryllium.This study is being conducted in an effort to characterize the effects of shock loading on textured, polycrystal1ine beryllium. Samples were fabricated from a billet of Kawecki-Berylco hot pressed HP-10 beryllium.

A Many-Beam Technique for Enhanced Resolution of Partial Dislocations

1972 ◽  
Vol 30 ◽  
pp. 646-647
Author(s):  
J. M. Oblak ◽  
B. H. Kear
Keyword(s):  
Phase Shift ◽  
Field Method ◽  
Dark Field ◽  
Bright Field ◽  
Field Technique ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Enhanced Resolution ◽  
Nickel Base ◽  
Beam Technique

The “weak-beam” and systematic many-beam techniques are the currently available methods for resolution of closely spaced dislocations or other inhomogeneities imaged through strain contrast. The former is a dark field technique and image intensities are usually very weak. The latter is a bright field technique, but generally use of a high voltage instrument is required. In what follows a bright field method for obtaining enhanced resolution of partial dislocations at 100 KV accelerating potential will be described.A brief discussion of an application will first be given. A study of intermediate temperature creep processes in commercial nickel-base alloys strengthened by the Ll2 Ni3 Al γ precipitate has suggested that partial dislocations such as those labelled 1 and 2 in Fig. 1(a) are in reality composed of two closely spaced a/6 <112> Shockley partials. Stacking fault contrast, when present, tends to obscure resolution of the partials; thus, conditions for resolution must be chosen such that the phase shift at the fault is 0 or a multiple of 2π.

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Spacings and Intensities of Weak-Beam Dark Field Thickness Fringes

1981 ◽  
Vol 39 ◽  
pp. 222-223
Author(s):  
M. Avalos-Borja ◽  
K. Heinemann
Keyword(s):  
Selection Criterion ◽  
Dark Field ◽  
Dynamical Theory ◽  
Bragg Condition ◽  
Weak Beam ◽  
Kinematical Theory ◽  
Equal Thickness

Weak-beam dark field (WBDF) TEM produces narrowly spaced equal-thickness fringes in wedge-shaped crystals. Using non-systematic diffraction conditions, we have shown elsewhere that simple 2-beam kinematical theory (KT) calculations yield average fringe spacings that are for most practical purposes as satisfactorily accurate as the average spacings obtained from optimized multibeam dynamical theory (DT) calculations, As Fig. 1 shows, this result holds for deviations from the Bragg condition as low as 2x10-1 nm-1, and the differences between the results from the two calculational methods become increasingly insignificant for larger excitation errors. (Unless otherwise noted, all results reported here are for gold crystals, using the 200 beam at 100 KV; the DT calculations were made for 74 beams, using the selection criterion D as discussed in ref. [3]).

Growth of hematite on (0001) and {1102} sapphire substrates

1990 ◽  
Vol 48 (4) ◽  
pp. 376-377
Author(s):  
Lisa A. Tietz ◽  
Scott R. Summerfelt ◽  
C. Barry Carter
Keyword(s):  
Imaging Techniques ◽  
Chemical Vapor ◽  
Interface Energy ◽  
Dark Field ◽  
Cation Sublattice ◽  
Sapphire Substrates ◽  
Dark Field Imaging ◽  
Weak Beam ◽  
Pressure Chemical ◽  
Interface Structures

Defects in thin films are often introduced at the substrate-film interface during the early stages of growth. The interface structures of semiconductor heterojunctions have been extensively studied because of the electrical activity of defects in these materials. Much less attention has been paid to the structure of oxide-oxide heterojunctions. In this study, the structures of the interfaces formed between hematite (α-Fe2O3) and two orientations of sapphire (α-Al2O3) are examined in relationship to the defects introduced into the hematite film. In such heterojunctions, the oxygen sublattice is expected to have a strong influence on the epitaxy; however, defects which involve only the cation sublattice may be introduced at the interface with little increase in interface energy.Oxide heterojunctions were produced by depositing small quantities of hematite directly onto electrontransparent sapphire substrates using low-pressure chemical vapor deposition. Prior to deposition, the ionthinned substrates were chemically cleaned and annealed at 1400°C to give “clean”, crystalline surfaces. Hematite was formed by the reaction of FeCl3 vapor with water vapor at 1150°C and 1-2 Torr. The growth of the hematite and the interface structures formed on (0001) and {102} substrates have been studied by bright-field, strong- and weak-beam dark-field imaging techniques.

Radiation-Induced Precipitation in Ti-6A1-4V

1980 ◽  
Vol 38 ◽  
pp. 154-155
Author(s):  
J. E. O'Neal ◽  
S. M. L. Sastry ◽  
J. W. Davis
Keyword(s):  
Dark Field ◽  
Dislocation Loops ◽  
Beta Titanium Alloy ◽  
Defect Clusters ◽  
Weak Beam ◽  
Beta Titanium ◽  
Small Defect ◽  
Radiation Induced ◽  
Vector Orientation ◽  
Defect Microstructures

The radiation-induced defect structure and nonequilibrium phase precipitation were studied in T1-6A1-4V (an alpha-beta titanium alloy), irradiated at 450 ± 30°C in row VII of the EBR-II to a fluence of 3.0 × 1021 neutrons/cm2 (En > 0.1 MeV). The Irradiation-induced defect microstructures were examined using bright-field, conventional dark-field, and weak-beam dark-field techniques. The nature of dislocations and dislocation loops was determined by standard-contrast experiments under two-beam conditions, and the small defect clusters were identified using the line-of-contrast criterion and black-white vector orientation criterion.

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