Nonpolar and Semipolar Orientations: Material Growth and Properties

Nitride-based optoelectronic devices prepared in the c orientation have been successfully introduced to the global marketplace and are changing the way we think about lighting. A part of the research interest has shifted toward nonpolar and semipolar orientations, which has the potential to broaden the scope and impact of this technology. This is because quantum-well structures prepared in nonpolar and semipolar orientations are able to suppress the quantum-confinement Stark effect, which has a negative impact on optoelectronic device performance. The lower crystal symmetry of such orientations provides spontaneously polarized light emission. Despite these attractive properties of nonpolar and semipolar orientations, the corresponding materials growth is not trivial. The present chapter discusses our efforts on growth of III-nitride materials in nonpolar and semipolar orientations and the related material properties.

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Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

Research ◽

10.34133/2020/5464258 ◽

2020 ◽

Vol 2020 ◽

pp. 1-35

Author(s):

Ziwei Li ◽

Boyi Xu ◽

Delang Liang ◽

Anlian Pan

Keyword(s):

Light Emission ◽

2D Materials ◽

Scientific Discovery ◽

Optoelectronic Devices ◽

Polarized Light ◽

Optoelectronic Device ◽

Raman Shift ◽

Novel Device ◽

Device Applications ◽

New Material

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

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Quantum Confinement Stark Effect of Different Gainnas Quantum Well Structures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.773.622 ◽

2013 ◽

Vol 773 ◽

pp. 622-627

Author(s):

Ying Ning Qiu ◽

Wei Sheng Lu ◽

Stephane Calvez

Keyword(s):

Electric Field ◽

Quantum Well ◽

Quantum Wells ◽

External Electric Field ◽

Quantum Confinement ◽

Stark Effect ◽

Band Gap Energy ◽

Electron Effective Mass ◽

Coupled Quantum Wells ◽

Quantum Well Structures

The quantum confinement Stark effect of three types of GaInNAs quantum wells, namely single square quantum well, stepped quantum wells and coupled quantum wells, is investigated using the band anti-crossing model. The comparison between experimental observation and modeling result validate the modeling process. The effects of the external electric field and localized N states on the quantized energy shifts of these three structures are compared and analyzed. The external electric field applied to the QW not only changes the potential profile but also modulates the localized N states, which causes band gap energy shifts and increase of electron effective mass.

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Strain relaxation effects on TE-polarized light emission and in-plane polarization ratio in c-plane ultraviolet AlGaN/AlN quantum well structures

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2020.114112 ◽

2020 ◽

Vol 120 ◽

pp. 114112

Author(s):

Seoung-Hwan Park ◽

Jongmyeong Kim ◽

Doyeol Ahn ◽

Euijoon Yoon

Keyword(s):

Quantum Well ◽

Light Emission ◽

Strain Relaxation ◽

Polarized Light ◽

Polarization Ratio ◽

Quantum Well Structures ◽

Relaxation Effects

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Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

IEEE Photonics Technology Letters ◽

10.1109/lpt.2016.2585497 ◽

2016 ◽

Vol 28 (20) ◽

pp. 2153-2155 ◽

Cited By ~ 4

Author(s):

Seoung-Hwan Park ◽

Doyeol Ahn

Keyword(s):

Light Emission ◽

Optoelectronic Devices ◽

Polarized Light ◽

Theoretical Studies

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CW and dynamic stable polarized light emission from VCSELs grown on [311]B substrate by MOCVD

Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) ◽

10.1109/islc.1998.734221 ◽

2002 ◽

Cited By ~ 1

Author(s):

H. Uenohara ◽

K. Tateno ◽

T. Kagawa ◽

H. Tsuda ◽

Y. Ohiso ◽

...

Keyword(s):

Light Emission ◽

Polarized Light

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Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

Applied Physics Letters ◽

10.1063/1.93794 ◽

1983 ◽

Vol 42 (10) ◽

pp. 864-866 ◽

Cited By ~ 119

Author(s):

D. S. Chemla ◽

T. C. Damen ◽

D. A. B. Miller ◽

A. C. Gossard ◽

W. Wiegmann

Keyword(s):

Quantum Well ◽

Room Temperature ◽

Stark Effect ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structures

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Mesoscopic characterization of the optical property of antiphase boundaries in CuPt-ordered GaInP2

MRS Proceedings ◽

10.1557/proc-588-105 ◽

1999 ◽

Vol 588 ◽

Author(s):

Y. Ohno ◽

S. Takeda

Keyword(s):

Optical Property ◽

Light Emission ◽

Polarized Light ◽

Structural Data ◽

Luminescence Spectra ◽

Antiphase Boundaries ◽

Transmission Electron ◽

Tem Method ◽

Low Dimensional ◽

First Time

AbstractWe have developed an apparatus for polarized cathodoluminescence (CL) spectroscopy combined with transmission electron microscopy (TEM), that enables us to obtain simultaneously structural data in higher spatial resolution by TEM and polarized luminescence spectra by CL of the same microscopic area. The polarized-CL/TEM method is very useful to study the optical properties of low-dimensional microstructures in semiconducting materials. We have applied the method to examine the optical property of antiphase boundaries in CuPt-ordered GaInP2 and found, for the first time, the polarized light emission from the APBs whose habit planes are parallel to the (T11) and (1T0) atomic planes.

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WAVEGUIDING STRUCTURE EXHIBITING VARIOUS NONLINEAR OPTICAL TRANSFER FUNCTIONS REALIZED WITH A WANNIER-STARK MODULATOR CONTAINING AN InGaAs/InP SUPERLATTICE

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863595000148 ◽

1995 ◽

Vol 04 (02) ◽

pp. 325-336 ◽

Cited By ~ 2

Author(s):

H. C. NEITZERT ◽

C. CACCIATORE ◽

D. CAMPI ◽

C. RIGO

Keyword(s):

Nonlinear Optical ◽

Stark Effect ◽

Transfer Functions ◽

Polarized Light ◽

Optical Power ◽

Optical Signal ◽

Signal Frequency ◽

Frequency Multiplication ◽

Short Period ◽

Optical Transfer

We report on the application of a self electro-optic effect device in waveguiding configuration for the generation of a wide variety of different nonlinear optical transfer functions. It makes use of the Wannier-Stark effect in an InGaAs/InP short period superlattice and operates at room temperature for TE-polarized light around 1.55 μm. In particular, optical bistability, optical signal-frequency multiplication and the operation as an optical power discriminator are demonstrated.

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Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Nanomaterials ◽

10.3390/nano11030559 ◽

2021 ◽

Vol 11 (3) ◽

pp. 559

Author(s):

Hui Yao ◽

Chao Zhang ◽

Qiang Wang ◽

Jianwei Li ◽

Yunjin Yu ◽

...

Keyword(s):

Optical Absorption ◽

Incident Light ◽

Optoelectronic Devices ◽

Large Family ◽

Middle Layer ◽

Optoelectronic Device ◽

First Principles Calculation ◽

Polarization Angle ◽

Two Dimensional ◽

Conducting Materials

Very recently, two new two-dimensional (2D) layered semi-conducting materials MoSi2N4 and WSi2N4 were successfully synthesized in experiments, and a large family of these two 2D materials, namely MA2Z4, was also predicted theoretically (Science, 369, 670 (2020)). Motivated by this exciting family, in this work, we systematically investigate the mechanical, electronic and optical properties of monolayer and bilayer MoSi2P4 and MoSi2As4 by using the first-principles calculation method. Numerical results indicate that both monolayer and bilayer MoSi2Z4 (Z = P, As) present good structural stability, isotropic mechanical parameters, moderate bandgap, favorable carrier mobilities, remarkable optical absorption, superior photon responsivity and external quantum efficiency. Especially, due to the wave-functions of band edges dominated by d orbital of the middle-layer Mo atoms are screened effectively, the bandgap and optical absorption hardly depend on the number of layers, providing an added convenience in the experimental fabrication of few-layer MoSi2Z4-based electronic and optoelectronic devices. We also build a monolayer MoSi2Z4-based 2D optoelectronic device, and quantitatively evaluate the photocurrent as a function of energy and polarization angle of the incident light. Our investigation verifies the excellent performance of a few-layer MoSi2Z4 and expands their potential application in nanoscale electronic and optoelectronic devices.

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