The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries
2008 ◽
Vol 600-603
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pp. 839-842
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Keyword(s):
The influence of the chemical mechanical planarization process on the 4o off-axis 4HN SiC removal rate for silicon carbide slurry produced by Cabot Microelectronics Corporation (CMC) has been studied. A detailed kinetic analysis was applied and the linearity of an Arrhenius-like activation energy plot suggests that the primary removal occurs from particles adhered to the pad surface.
2008 ◽
Vol 2008.7
(0)
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pp. 203-204
Keyword(s):
2015 ◽
Vol 80
(9-12)
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pp. 1511-1520
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Keyword(s):
Keyword(s):
1990 ◽
Vol 137
(3)
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pp. 854-858
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Keyword(s):