Growth of Graphene Layers on Silicon Carbide

2009 ◽  
Vol 615-617 ◽  
pp. 199-202 ◽  
Author(s):  
Wlodek Strupiński ◽  
Rafał Bożek ◽  
Jolanta Borysiuk ◽  
Kinga Kościewicz ◽  
Andrzej Wysmolek ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Decomposition Temperature ◽  
Atomic Scale ◽  
Graphene Layers ◽  
Transmission Electron ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy

The so-called “growth” of graphene was performed using a horizontal chemical vapor deposition (CVD) hot-wall reactor. In-situ etching in the mixture (H2-C3H8) was performed prior to growth at 1600oC temperature under 100 mbar. Systematic studies of the influence of the decomposition temperature and time, substrates roughness, etching of the substrates, heating rate, SiC dezorientation and other process parameters on the graphene thickness and quality have been conducted. Morphology and atomic scale structure of graphene was examined by Scanning Tunnelling Microscopy (STM), Transmission Electron Microscopy (TEM) and Raman scattering methods.

Controlled Growth of Carbon Spheres by Chemical Vapor Deposition Based on Anodic Aluminum Oxide Nano-Template

2012 ◽  
Vol 184-185 ◽  
pp. 924-927
Author(s):  
Lei Shan Chen ◽  
Cun Jing Wang ◽  
Gai Rong Chen
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Anodic Aluminum Oxide ◽  
Chemical Vapor ◽  
Average Diameter ◽  
Carbon Spheres ◽  
Aao Template ◽  
Graphene Layers ◽  
Anodic Aluminum ◽  
Transmission Electron

The reactions were carried out by decomposing acetylene at 1000 °C in a two-stage furnace system for 10 min. In the first furnace no catalyst was placed and an AAO template with the average diameter about 50 nm was placed in the second furnace whose temperature was designed to be 500 °C, 600 °C and 700 °C. The samples were characterized by scanning electron microscopy and high resolution transmission electron microscopy. The results show that carbon spheres with average diameter about 50 nm on the AAO template surface were obtained when the temperature of the second furnace was designed to be 700 °C. These carbon spheres are composed of unclosed graphene layers with an interlayer distance of 0.33–0.35 nm between the layers.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Analytical microscopy of titanium nitride

1991 ◽  
Vol 69 (3-4) ◽  
pp. 290-297 ◽  
Author(s):  
M. Simard-Normandin ◽  
L. Weaver ◽  
D. Vacca ◽  
D. Rogers ◽  
A. Vitkin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Titanium Nitride ◽  
Microelectronic Devices ◽  
Transmission Electron ◽  
Raman Microprobe ◽  
Scanning Tunnelling ◽  
Analytical Microscopy ◽  
Tunnelling Microscopy

We report on microscopy tools for the in-situ analysis of TiN in microelectronic devices. Scanning tunnelling microscopy and Raman microprobe spectroscopy are compared with scanning and transmission electron microscopy.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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