The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.645-648.131 ◽

2010 ◽

Vol 645-648 ◽

pp. 131-134 ◽

Cited By ~ 2

Author(s):

James Huguenin-Love ◽

Noel T. Lauer ◽

Rodney J. Soukup ◽

Ned J. Ianno ◽

Štepan Kment ◽

...

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Cathode Sputtering

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

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Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

MRS Proceedings ◽

10.1557/proc-862-a20.2 ◽

2005 ◽

Vol 862 ◽

Cited By ~ 5

Author(s):

R. J. Soukup ◽

N. J. Ianno ◽

J. S. Schrader ◽

V. L. Dalal

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

Hollow Cathode ◽

Growth Conditions ◽

Group Iv ◽

Native Oxide ◽

Cathode Sputtering ◽

Si Substrates ◽

New Material ◽

Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

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Reactive sputter deposition of alumina thin films using a hollow cathode sputtering source

Review of Scientific Instruments ◽

10.1063/1.1512340 ◽

2002 ◽

Vol 73 (11) ◽

pp. 3841-3845 ◽

Cited By ~ 8

Author(s):

Anshu A. Pradhan ◽

S. Ismat Shah ◽

Karl M. Unruh

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Sputter Deposition ◽

Cathode Sputtering ◽

Reactive Sputter Deposition

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Large area deposition of YBaCuO thin films by means of hollow cathode sputtering

Journal of Alloys and Compounds ◽

10.1016/0925-8388(93)90736-7 ◽

1993 ◽

Vol 195 ◽

pp. 267-269 ◽

Cited By ~ 2

Author(s):

H.-U. Müller ◽

J.-P. Müller ◽

F. Ludwig ◽

G. Ehlers

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Large Area ◽

Cathode Sputtering ◽

Area Deposition

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Thin films of GeC deposited using a unique hollow cathode sputtering technique

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2006.03.007 ◽

2006 ◽

Vol 90 (15) ◽

pp. 2338-2345 ◽

Cited By ~ 22

Author(s):

J.S. Schrader ◽

J.L. Huguenin-Love ◽

R.J. Soukup ◽

N.J. Ianno ◽

C.L. Exstrom ◽

...

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Cathode Sputtering

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Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique

MRS Proceedings ◽

10.1557/proc-0910-a07-03 ◽

2006 ◽

Vol 910 ◽

Author(s):

James L. Huguenin-Love ◽

Rodney J. Soukup ◽

Natale J. Ianno ◽

Jason S. Schrader ◽

Vikram L. Dalal

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Basic Material ◽

X Ray Diffraction ◽

Film Properties ◽

Cathode Sputtering ◽

Lattice Match ◽

Cylindrical Tubes ◽

New Material ◽

Initial Results

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented here. The (Ge, C) system is extremely promising since the addition of C to Ge has reduced the lattice dimensions enough to allow a lattice match to silicon, while increasing the bandgap close to that of c-Si. The sputtering is accomplished by igniting a dc plasma of the Ar and H2 gases which are fed through Ge and C nozzles, cylindrical tubes 30 mm in length with an 8 mm O.D. and a 3 mm I.D.The basic material, optical, and structural properties were analyzed. Film characterization was performed using Fourier transform infra-red spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Auger electron spectroscopy. Additional measurements such as Tauc bandgap, conductivity as a function of temperature and light intensity, and film uniformity have been made. The film properties from a variety of deposition conditions are discussed. The measurements made indicate that the films can be grown so that the C enters the material at lattice sites. In addition, the GexC1-x films absorb photons much more efficiently than either c-Si or c-Ge.Initial results on Al doped films are presented.

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Optical and crystallographic analysis of thin films of GeC deposited using a unique hollow cathode sputtering technique

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2006.08.026 ◽

2006 ◽

Vol 9 (4-5) ◽

pp. 759-763 ◽

Cited By ~ 8

Author(s):

J.L. Huguenin-Love ◽

R.J. Soukup ◽

N.J. Ianno ◽

J.S. Schrader ◽

D.W. Thompson ◽

...

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Crystallographic Analysis ◽

Cathode Sputtering

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Hollow cathode magnetron deposition of AlN thin films: crystalline structure and morphology

Brazilian Journal of Physics ◽

10.1590/s0103-97332006000300026 ◽

2006 ◽

Vol 36 (2a) ◽

pp. 332-335 ◽

Cited By ~ 9

Author(s):

R. S. Pessoa ◽

G. Murakami ◽

G. Petraconi ◽

H. S. Maciel ◽

I. C. Oliveira ◽

...

Keyword(s):

Thin Films ◽

Crystalline Structure ◽

Hollow Cathode ◽

Magnetron Deposition ◽

Structure And Morphology

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Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

MRS Proceedings ◽

10.1557/proc-808-a9.4 ◽

2004 ◽

Vol 808 ◽

Cited By ~ 1

Author(s):

R. J. Soukup ◽

N. J. Ianno ◽

Scott A. Darveau ◽

Christopher L. Exstrom

Keyword(s):

Thin Films ◽

Hollow Cathode ◽

Secondary Ion Mass Spectrometry ◽

Dark Conductivity ◽

Cathode Plasma ◽

Glass Substrates ◽

Elemental Analyses ◽

Silicon And Germanium ◽

Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

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