Thin Films of GeC Deposited Using a Unique Hollow Cathode Sputtering Technique

2006 ◽  
Vol 910 ◽  
Author(s):  
James L. Huguenin-Love ◽  
Rodney J. Soukup ◽  
Natale J. Ianno ◽  
Jason S. Schrader ◽  
Vikram L. Dalal
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Basic Material ◽  
X Ray Diffraction ◽  
Film Properties ◽  
Cathode Sputtering ◽  
Lattice Match ◽  
Cylindrical Tubes ◽  
New Material ◽  
Initial Results

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented here. The (Ge, C) system is extremely promising since the addition of C to Ge has reduced the lattice dimensions enough to allow a lattice match to silicon, while increasing the bandgap close to that of c-Si. The sputtering is accomplished by igniting a dc plasma of the Ar and H2 gases which are fed through Ge and C nozzles, cylindrical tubes 30 mm in length with an 8 mm O.D. and a 3 mm I.D.The basic material, optical, and structural properties were analyzed. Film characterization was performed using Fourier transform infra-red spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Auger electron spectroscopy. Additional measurements such as Tauc bandgap, conductivity as a function of temperature and light intensity, and film uniformity have been made. The film properties from a variety of deposition conditions are discussed. The measurements made indicate that the films can be grown so that the C enters the material at lattice sites. In addition, the GexC1-x films absorb photons much more efficiently than either c-Si or c-Ge.Initial results on Al doped films are presented.

Polycrystalline GeC Thin Films Deposited Using a Unique Hollow Cathode Sputtering Technique

2005 ◽  
Vol 862 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
J. S. Schrader ◽  
V. L. Dalal
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Hollow Cathode ◽  
Growth Conditions ◽  
Group Iv ◽  
Native Oxide ◽  
Cathode Sputtering ◽  
Si Substrates ◽  
New Material ◽  
Equilibrium Growth

AbstractExperimental results on thin films of the new material GexC1-x, deposited by a unique dual plasma hollow cathode sputtering technique are presented. The mostimportant contribution of this work is that it shows that by using non-equilibrium growth conditions resulting from the hollow cathode technique, one can grow Group IV materials which cannot otherwise be grown using normal CVD or MBE processes. The sputtering is accomplished by igniting a dc plasma in the Ar and H2 gases which are fed through Ge and C nozzles.The GeC films are grown on etched Si (100), on Si with the native oxide and on glass. The films grown on glass were quite disordered, but the films grown on both types of Si substrates were very ordered in nature. This order has been characterized using Xray diffraction (XRD) and Raman spectroscopy.Films with as much as 8% C have been deposited. In order to produce useful GexC1-x films, the C must bond to the Ge at lattice sites. Evidence of this desired GeC bond has been seen using Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and XRD.

Growth study of epitaxial FexZn1−xF2 thin films

2001 ◽  
Vol 16 (6) ◽  
pp. 1769-1775 ◽  
Author(s):  
J. McChesney ◽  
M. Hetzer ◽  
H. Shi ◽  
T. Charlton ◽  
D. Lederman
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Magnetic Phase Diagram ◽  
Epitaxial Thin Films ◽  
X Ray Diffraction ◽  
Growth Study ◽  
Lattice Match ◽  
Different Temperatures ◽  
Bulk Single Crystals ◽  
The Ideal

The FexZn1−xF2 alloy has been shown to be a model system for studying the magnetic phase diagram of dilute magnets. Whereas the growth of bulk single crystals with fixed Zn concentrations is difficult, the thin film growth is comparatively simpler and more flexible. To gain an understanding of the growth of FexZn1−xF2 films, a method was developed to grow smooth films at fixed concentrations. This was done by depositing a MgF2 buffer layer on MgF2(001) substrates and then depositing FeF2 and ZnF2 [001]-orientated epitaxial thin films at different temperatures. Surprisingly, the lattice spacing depends strongly on the growth temperature, for 44-nm-thick FeF2 films and 77-nm-thick ZnF2 films. This indicates a significant amount of stress, despite the close lattice match between the films and the MgF2 substrate. Thick alloy samples (approximately 500 nm thick) were grown by co-evaporation from the FeF2 and ZnF2 sources at the ideal temperature determined from the growth study, and their concentration was accurately determined using x-ray diffraction.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

2010 ◽  
Vol 645-648 ◽  
pp. 131-134 ◽  
Author(s):  
James Huguenin-Love ◽  
Noel T. Lauer ◽  
Rodney J. Soukup ◽  
Ned J. Ianno ◽  
Štepan Kment ◽  
...  
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Cathode Sputtering

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

DEPOSITION OF TiAlV THIN FILMS BY PULSED LASER AND DC MAGNETRON SPUTTERING: STRUCTURAL, COMPOSITIONAL AND ELECTROCHEMICAL CORROSION STUDY

2019 ◽  
Vol 27 (08) ◽  
pp. 1950188
Author(s):  
A. ALKHAWWAM ◽  
B. ABDALLAH ◽  
A. K. JAZMATI ◽  
M. TOOTANJI ◽  
F. LAHLAH
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Corrosion Test ◽  
Pulsed Laser ◽  
Electrochemical Corrosion ◽  
Target Material ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
X Ray

In this work, TiAlV thin films have been prepared on two different types of substrates: silicon and stainless steel (SS304) by two deposition methods: Pulsed Laser Deposition (PLD) and DC magnetron sputtering. Different techniques have been employed in order to characterize film properties such as: Scanning Electron Microscopy (SEM) equipped with Energy Dispersive X-ray (EDX), X-ray diffraction (XRD), microhardness and corrosion test. EDX analysis showed that the deposited films are slightly different from that of the target material Ti6Al4V alloy. The measured microhardness values are about 11.7[Formula: see text]GPa and 4.7[Formula: see text]GPa for films prepared by PLD and DC magnetron sputtering, respectively. Corrosion test indicated that the corrosion resistance of the two TiAlV films deposited on SS304 substrates in (0.9% NaCl) physiological normal saline medium was significantly improved compared with the SS304 substrates. These attractive results could permit applications of our films in the medical implants fabrication.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Wear Resistance and XRD Analyses of CMoCuNiCrSiBO Coatings Obtained by Thermal Deposition on OLC45 Substrate

2014 ◽  
Vol 659 ◽  
pp. 10-15 ◽  
Author(s):  
Petru Avram ◽  
Marius Stelian Imbrea ◽  
Bogdan Istrate ◽  
Sorin Iacob Strugaru ◽  
Iulian Cucos ◽  
...  
Keyword(s):  
Friction Coefficient ◽  
Basic Material ◽  
X Ray Diffraction ◽  
Thermal Deposition ◽  
High Durability ◽  
New Material ◽  
Machine Elements ◽  
Coated Surfaces ◽  
Selection Of

Idlers are machine elements which are subjected to friction solicitations. The geometry, dimensions and weight can’t be modified that is why we decided to modify the contact surface by coating. We have chosen the steel type OLC 45 and we coated it with CMoCuNiCrSiBO by thermal deposition. The selection of these materials was made after a detailed study of the literature. After we obtained the samples, we subjected them to qualitative analyses SEM and XRD and to Quantitative analysis – wearing – destructive test where we obtained the friction coefficient between two coated surfaces [1]. We made the samples which we have analyzed by X-Ray Diffraction and we obtained the quality of the coating [2]. The results showed that the new material has a better structure than the basic material, and we can estimate a high durability of the machine elements coated. On friction test we have determined friction coefficient value.

Influence of Underlayer and Encapsulation Process on Texture in Polycrystalline Silver Thin Films

1997 ◽  
Vol 472 ◽  
Author(s):  
Yuxiao Zeng ◽  
Y. L. Zou ◽  
T. L. Alford ◽  
F. DENG ◽  
S. S Lau ◽  
...  
Keyword(s):  
Thin Films ◽  
Fiber Texture ◽  
Space Distribution ◽  
Fiber Axis ◽  
X Ray Diffraction ◽  
Diffraction Intensity ◽  
Lattice Match ◽  
Axis Parallel ◽  
Encapsulation Process ◽  
Polycrystalline Silver

ABSTRACTThe texture in polycrystalline Ag thin films prepared by e-beam evaporation has been characterized by an x-ray diffraction technique as a function of underlayers and encapsulation temperatures. The Ag films deposited on Ti layers showed a strong <111> fiber texture with a fiber axis parallel to the film normal, whereas an almost random orientation was observed in the Ag films on Cr layers. This underlayer dependence of texture is associated with the lattice match between Ag and underlayer metal. In addition to <111> texture, the Ag films on Ti also exhibited a <511> texture component, which is the result of twinning of <111> -oriented grains. After the encapsulation process, the <111> texture in the Ag films on Ti was significantly improved, as evidenced by an increased (111) diffraction intensity and a slightly narrower space distribution of the texture along the fiber axis. The highly textured Ag films are expected to exhibit an improved electromigration resistance.

scholarly journals Структура и сегнетоэлектрические свойства гетероэпитаксиальных тонких пленок NaNbO-=SUB=-3-=/SUB=-, полученных методом RF-катодного распыления

2020 ◽  
Vol 46 (2) ◽  
pp. 15
Author(s):  
А.В. Павленко ◽  
Д.В. Стрюков ◽  
Н.В. Тер-Оганесян
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Oxygen Atmosphere ◽  
Cell Deformation ◽  
X Ray Diffraction ◽  
Cathode Sputtering ◽  
Ferroelectric State ◽  
X Ray ◽  
First Time

For the first time, thin films of NaNbO3 on a MgO(001) substrate, on which a SrRuO3 layer was previously deposited, were obtained by RF cathode sputtering in an oxygen atmosphere. According to x-ray diffraction analysis the films are single phase and single-crystalline. The lattice parameters in the tetragonal approximation for the NaNbO3 and SrRuO3 layers were: с(NaNbO3) = 0.3940(1) nm, a(NaNbO3) = 0.389(1) nm; с(SrRuO3) = 0.4004(1) nm, a(SrRuO3) = 0.392(3) nm. The unit cell deformation for NaNbO3 was ε33 = 0.007, ε11 = 0.002. Dielectric and piezoelectric measurements indicate that the films are in a ferroelectric state.

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