Influence of the Sputtering Pressure on the Properties of TAZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1045-1048
Author(s):  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Sputtering Pressure ◽  
Deposited Films

Transparent conducting Ti-Al co-doped zinc oxide films (TGZO) with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by DC magnetron sputtering at room temperature. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The Ar sputtering pressure was varied from 1.5 to 13 Pa. The electrical resistivity decreases when the sputtering pressure increases from 1.5 to 7.5 Pa. The electrical resistivity increases when the sputtering pressure increases from 7.5 to 13 Pa. When the sputtering pressure is 7.5 Pa, it is obtained that the lowest resistivity is 2.18×10-4Ω⋅cm. In the visible region, all the deposited films show a high average transmittance of above 92 %.

Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Effect of the Sputtering Presser on Structural and Optoelectrical Properties of ZnO: Ga Films Deposited on Flexible Substrates by DC Magnetron Sputtering

2012 ◽  
Vol 263-266 ◽  
pp. 90-94
Author(s):  
Xiao Li Wu ◽  
Yu Zhen Yuan ◽  
Han Fa Liu ◽  
Yun Yan Liu
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
Flexible Substrates ◽  
Dc Magnetron Sputtering ◽  
High Transparency ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Sputtering Pressure ◽  
Deposited Films

Transparent conducting Ga-doped ZnO (ZnO∶Ga) thin films with high transparency and relatively low resistivity have been successfully prepared on ZnO-buffered Polyimide (PI) by DC magnetron sputtering at room temperature. Structural, morphological, stress, optical and electrical proerties of ZnO∶Ga films are investigated. Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis. Sputtering pressure plays an important role on the electrical resistivity of flexible ZnO∶Ga films. When sputteting pressure increases from 2 Pa to 6 Pa, the resistivity of the deposited films initially decreases and then slightly increases. At the optimum sputtering pressure of 4 Pa, the lowest resistivity of 4.3×10-4Ω•㎝ is obtained. All the filma present a high transmittance over 90％ in limit spectral range.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Effect of Sputtering Power on the Properties of Transparent Conducting Ti-Al Co-Doped Zine Oxide Films Prepared by DC Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 1739-1743
Author(s):  
Xiao Fei Shi ◽  
Han Fa Liu
Keyword(s):  
Magnetron Sputtering ◽  
Oxide Films ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Sputtering Power ◽  
Xrd Patterns ◽  
Deposited Films ◽  
Co Doped

Transparent conducting Ti-Al co-doped zinc oxide films (TAZO) with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering. The effect of sputtering power on the structural, optical, and electrical properties of Ti-Al co-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. The electrical resistivity decreases when the sputtering power increases from 40W to 120W. When the sputtering power is 120w and the target-substrate distance is 60mm, it is obtained that the lowest resistivity is 3.23×10-4Ω·cm.The lowest stress is 0.864Gpa in all the deposited films. All the films present a high transmittance of above 91% in the visible range.

NANO-INDENTER MECHANICAL PROPERTIES OF ITO/GLASS THIN FILM DEPOSITED BY DC MAGNETRON SPUTTERING METHOD AT LOW TEMPERATURE

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4322-4327
Author(s):  
HAN-KI YOON ◽  
DO HYOUNG KIM ◽  
DO HOON SHIN ◽  
RI-ICHI MURAKAMI
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Optical Transmittance ◽  
Experimental Result ◽  
Dc Magnetron Sputtering ◽  
Ito Film ◽  
Ito Glass ◽  
Sputtering Pressure ◽  
Ito Films

The ITO film was deposited onto the glass substrate at room temperature by the inclination opposite target type DC magnetron sputtering equipment. An indium tin alloy ( In 2 O 3(90 wt %)+ SnO 2(10 wt %)) target was used. The Total sputtering pressure was varied from 2.6×10-1 to 8.3×10-1 Pa . The experimental result showed that the ITO film produced at room temperature had microstructure in which a X-ray diffraction peak is not clear, regardless of the total sputtering pressure. All the films showed a high optical transmittance. The ITO films prepared at low pressures gave low electrical resistivity. The elastic modulus and hardness of ITO films on various total sputtering pressures were increased with decreasing the total sputtering pressure and this tendency was similar to the change in electrical resistivity with decreasing the total sputtering pressure.

scholarly journals DEPOSITION OF HIGH-ELECTRON-MOBILITY TRANSPARENT CONDUCTING ALUMINUM-DOPED ZINC OXIDE THIN FILMS BY DC MAGNETRON SPUTTERING

2018 ◽  
Vol 54 (1A) ◽  
pp. 160
Author(s):  
Hoang Van Dung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electron Mobility ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Substrate Temperatures

Transparent conducting Al-doped ZnO (AZO) thin films were deposited on glass substrates by DC magnetron sputtering from AZO ceramic target (0.75 %wt Al2O3) in gas mixture of (Ar + H2) at different substrate temperatures. At value of 1.7 % of ratio of H2 to (H2+Ar) and at substrate temperature of 200 oC, electron mobility in obtained AZO films is 60.2 cm2.V-1.s-1, which is much larger than 34.6 cm2.V-1.s-1 of films fabricated in the same condition without H2. AZO films also have a low resistivity of 2.53×10-4 Ω.cm, low sheet resistance of 2.5 Ω/□ and high average transmittance above 80 % in the wavelength range of 400 – 1100 nm.

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure
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