Influence of the Distance between Target and Substrate on the Properties of TGZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 572-575 ◽  
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang ◽  
Ai Ping Zhou
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Average Transmittance ◽  
Xrd Patterns ◽  
Deposited Films

Ti-Ga co-doped ZnO thin films (TGZO) have been successfully prepared on glass substrates by DC magnetron sputtering at room temperature. The X-ray diffraction (XRD) patterns show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The distance between target and substrate was varied from 41 to 75 mm. The crystallinity increases obviously and the electrical resistivity decreases when the distance between target and substrate decreases from 75 to 46 mm. However, as the distance decreases further, the electrical resistivity increases. It is obtained that the lowest resistivity is 2.0610-4cm when the distance between target and substrate is 46 mm. In the visible region, the TGZO films show a high average transmittance of above 90 %.

Influence of the Sputtering Pressure on the Properties of TAZO Films Prepared by DC Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1045-1048
Author(s):  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Sputtering Pressure ◽  
Deposited Films

Transparent conducting Ti-Al co-doped zinc oxide films (TGZO) with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by DC magnetron sputtering at room temperature. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The Ar sputtering pressure was varied from 1.5 to 13 Pa. The electrical resistivity decreases when the sputtering pressure increases from 1.5 to 7.5 Pa. The electrical resistivity increases when the sputtering pressure increases from 7.5 to 13 Pa. When the sputtering pressure is 7.5 Pa, it is obtained that the lowest resistivity is 2.18×10-4Ω⋅cm. In the visible region, all the deposited films show a high average transmittance of above 92 %.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

Influence of Sputtering Power on Molybdenum-Doped Zinc Oxide Films Grown by RF Magnetron Sputtering

2013 ◽  
Vol 873 ◽  
pp. 426-430
Author(s):  
Xian Wu Xiu ◽  
Li Xu ◽  
Cheng Qiang Zhang
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Hexagonal Structure ◽  
Visible Range ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Sputtering Power

Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature. The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated. X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along thecaxis perpendicular to the substrate. The resistivity increases with the increase of the RF power. The lowest resistivity achieved is 5.4×10-3Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2V-1s-1and a carrier concentration of 1.1×1019cm-3. The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.

STUDY OF CHEMICAL BATH DEPOSITION OF ZnS THIN FILMS WITH SUBSTRATE VIBRATION

2008 ◽  
Vol 15 (06) ◽  
pp. 821-827 ◽  
Author(s):  
Z. Q. BIAN ◽  
X. B. XU ◽  
J. B. CHU ◽  
Z. SUN ◽  
Y. W. CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrazine Hydrate ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Hexagonal Structure ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Alkaline Conditions ◽  
Zns Films

An improved chemical bath deposition (CBD) technique has been provided to prepare zinc sulfide ( ZnS ) thin films on glass substrates deposited at 80–82°C using a mixed aqueous solution of zinc sulfate, ammonium sulfate, thiourea, hydrazine hydrate, and ammonia at the alkaline conditions. Both the traditional magnetic agitation and the substrates vibration by hand frequently were done simultaneously during the deposition. The substrates vibration reduced the formation and residence of gas bubbles on the glass substrates during growth and resulted in growth of clean ZnS thin films with high quality. Ammonia and hydrazine hydrate were used as complexing agents. It is found that hydrazine hydrate played an important role in growth of ZnS films. The structure and microstructure of ZnS films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-vis spectroscopic methods. The XRD showed a hexagonal structure. The formed ZnS films exhibited good optical properties with high transmittance in the visible region and the band gap value was estimated to be 3.5–3.70 eV.

Effect of Sputtering Power on the Properties of Transparent Conducting Ti-Al Co-Doped Zine Oxide Films Prepared by DC Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 1739-1743
Author(s):  
Xiao Fei Shi ◽  
Han Fa Liu
Keyword(s):  
Magnetron Sputtering ◽  
Oxide Films ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Sputtering Power ◽  
Xrd Patterns ◽  
Deposited Films ◽  
Co Doped

Transparent conducting Ti-Al co-doped zinc oxide films (TAZO) with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering. The effect of sputtering power on the structural, optical, and electrical properties of Ti-Al co-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. The electrical resistivity decreases when the sputtering power increases from 40W to 120W. When the sputtering power is 120w and the target-substrate distance is 60mm, it is obtained that the lowest resistivity is 3.23×10-4Ω·cm.The lowest stress is 0.864Gpa in all the deposited films. All the films present a high transmittance of above 91% in the visible range.

scholarly journals DEPOSITION OF HIGH-ELECTRON-MOBILITY TRANSPARENT CONDUCTING ALUMINUM-DOPED ZINC OXIDE THIN FILMS BY DC MAGNETRON SPUTTERING

2018 ◽  
Vol 54 (1A) ◽  
pp. 160
Author(s):  
Hoang Van Dung
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electron Mobility ◽  
High Electron ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Aluminum Doped Zinc Oxide ◽  
Substrate Temperatures

Transparent conducting Al-doped ZnO (AZO) thin films were deposited on glass substrates by DC magnetron sputtering from AZO ceramic target (0.75 %wt Al2O3) in gas mixture of (Ar + H2) at different substrate temperatures. At value of 1.7 % of ratio of H2 to (H2+Ar) and at substrate temperature of 200 oC, electron mobility in obtained AZO films is 60.2 cm2.V-1.s-1, which is much larger than 34.6 cm2.V-1.s-1 of films fabricated in the same condition without H2. AZO films also have a low resistivity of 2.53×10-4 Ω.cm, low sheet resistance of 2.5 Ω/□ and high average transmittance above 80 % in the wavelength range of 400 – 1100 nm.

Composition, Structure and Electrical Resistivity of TiOx Thin Films Deposited by RF Magnetron Sputtering at Varied Substrate Temperatures

2014 ◽  
Vol 602-603 ◽  
pp. 1039-1042 ◽  
Author(s):  
Hai Xia Su ◽  
Zhi Jian Peng ◽  
Xiu Li Fu
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Anatase Phase ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Composition Structure ◽  
Substrate Temperatures ◽  
Deposited Films

TiOx thin films were deposited by RF magnetron sputtering with TiOx (x<2) target at varied substrate temperatures. The composition and microstructure of the films was characterized by grazing incidence X-ray diffraction, scanning electron microscopy and Raman spectroscopy, which revealed that the films deposited at low temperatures were amorphous, and as the temperature increased up to 600 °C, the prepared films became crystalline and a TiO2 anatase phase was identified. Also the electrical resistivity of the as-prepared TiOx films was investigated as a function of the deposition temperature. The result indicates that with the raise of substrate temperature, the electrical resistivity of the deposited films decreased sharply.

Optical and Structural Properties of ZnS Thin Films Grown by CBD Technique

2010 ◽  
Vol 139-141 ◽  
pp. 149-152 ◽  
Author(s):  
Huda Abdullah ◽  
Nor Habibi Saadah ◽  
Sahbudin Shaari ◽  
Andanastuti Muchtar
Keyword(s):  
Thin Films ◽  
Deposition Time ◽  
Sodium Citrate ◽  
Optical Glass ◽  
Visible Region ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Glass Substrates ◽  
Direct Band ◽  
Deposited Films

Zinc sulfide thin films were deposited on optical glass substrates by using chemical bath deposition (CBD) technique that contain solutions of thiourea, zinc acetate, ammonia and sodium citrate. The deposition time were varied from 18 hours to 39 hours. SEM, XRD, and UV-Vis-NIR were used to characterize the sample which shows that the films are thicker and the grains sizes are bigger as the deposition time increases. X-ray diffraction (XRD) pattern prove that ZnS thin films are in disordered since it does not revealing any peaks and the surface of ZnS thin films are amorphous. UV-Vis spectra showed that the deposited ZnS thin films have more than 100% transmittance in the visible region and direct band gap of deposited films are in range of 2.45 eV to 3.53 eV. Time increasing of deposition will slightly decrease the transmittance of the film.

Sign in / Sign up

Export Citation Format

Share Document