Characterization of Spin Coated Nondoped and In-Doped ZnO Films Using Novel Precursor Solution

2012 ◽  
Vol 725 ◽  
pp. 277-280 ◽  
Author(s):  
Koichiro Inaba ◽  
Yujin Takemoto ◽  
Kouji Toyota ◽  
Kenichi Haga ◽  
Kouichi Tokudome ◽  
...  

A novel precursor for ZnO film deposition with Zn-O structure was synthesized by the reaction of diethylzinc and water in some ether solvents. The novel precursor was characterized by 1H-NMR spectroscopy and differential scanning calorimetry (DSC). Nondoped and In-doped ZnO films on a glass substrate have been successfully grown by conventional spin coating using nondoped and In added novel precursor solution. The samples have an optical transmittance of more than 85%, and a smooth surface determined from optical transmittance and scanning electron microscopy, respectively. The sheet resistivity of In-doped ZnO films is lower than that of nondoped ZnO film.

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.


2001 ◽  
Vol 398-399 ◽  
pp. 641-646 ◽  
Author(s):  
Jin-Bock Lee ◽  
Hye-Jung Lee ◽  
Soo-Hyung Seo ◽  
Jin-Seok Park

2000 ◽  
Vol 220 (3) ◽  
pp. 254-262 ◽  
Author(s):  
M. Chen ◽  
Z.L. Pei ◽  
C. Sun ◽  
L.S. Wen ◽  
X. Wang

2010 ◽  
Vol 663-665 ◽  
pp. 397-400 ◽  
Author(s):  
Peng Fei Cheng ◽  
Sheng Tao Li ◽  
Han Chen Liu ◽  
Li Xun Song ◽  
Bin Gao ◽  
...  

The effect of an impurity as a donor or an acceptor in ZnO film is determined by its distribution in ZnO lattice. In this paper the distribution of Li is investigated by X-ray diffraction (XRD) and photoluminescence (PL). It is found that Li-doped ZnO films own different dependence on heat treatment temperature by contrast with pure ZnO films. For Li-doped ZnO films, although the crystallinity is promoted after heat treatment at 500oC, it is impeded effectively after heat treatment at 600oC. The abnormal phenomenon implies that Li preferential inhabits at Zn-sublattice to form a substitutional defect as an acceptor unless Li content exceeds its solubility in Zn-sublattice. The change of the PL spectra of pure ZnO films after heat treatment at different temperatures reveals that the PL peak at 650nm origins from interstitial defects. Moreover, with the increase of Li content, the intensity of the peak at 650nm decreases firstly and then increases again. This interesting changing trend further reveals that superfluous Li will enter into the octahedral interspaces as donors. As a conclusion it is proposed that it is difficult to obtain high conductive p-ZnO by monodoping of Li.


2013 ◽  
Vol 1494 ◽  
pp. 91-97
Author(s):  
Tien-Chai Lin ◽  
Wen-Chang Huang ◽  
Chin-Hung Liu ◽  
Shang-Chou Chang

ABSTRACTThermal effects on the crystal structure, electrical and optical characteristics of the Al and F co-doped ZnO films (ZnO:AlF3) are discussed in the paper. The ZnO:AlF3 thin films are prepared by RF sputtering with a constant power (ZnO/AlF3=100W/75W) toward the ZnO and AlF3 targets. The substrate temperature varied from room temperature to 250 °C with a step of 50 °C during thin film deposition. The crystalline quality of the ZnO:AlF3 film improved as the substrate temperature increased, with a corresponding increase in grain size. The improvement of the film quality leads to a higher electron mobility, with electron mobility of 0.85 cm2/V-s for the film deposited at the substrate temperature of 250 °C. The doping effect of fluorine in ZnO, and hence carrier concentration, was reduced at high temperature due to the vaporization of fluorine. This led to a reduction of carrier concentration with increase of temperature from 25 to 200°C. The corresponding resistivity increased from 3.60×10−2 to 6.0×10−2 Ω-cm. While for a further increase in substrate temperature, the doping of Al to the ZnO film was increased and resulted in an increase in carrier concentration.


2017 ◽  
Vol 11 (3) ◽  
pp. 213-219 ◽  
Author(s):  
Amrik Singh ◽  
Devendra Mohan ◽  
Singh Ahlawat ◽  
R Richa

Dye sensitized solar cells (DSSCs) were fabricated using silver doped ZnO films deposited on ITO glass by spin coating method. The crystalline nature of ZnO films was analysed with XRD and SEM technique was used for morphological studies. The XRD pattern confirmed the presence of single phase hexagonal wurtzite ZnO structure, without the presence of secondary phase. The crystallite size of ZnO decreased from 31 nm to 25 nm with increase in doping to 1.5mol% of silver. The UV-visible transmission of the prepared ZnO film was found to be 70-90% and it decreased with increase in doping to 0.5mol% Ag and increased in the film doped with 1.5mol% Ag. The band gap values of the ZnO films with 0, 0.5 and 1.5mol% of silver, determined from Tauc plot, were 3.269, 3.235 and 3.257 eV, respectively. The absorbance peaks of the N719 dye loaded ZnO films were obtained at the wavelengths 310, 350 and 538 nm. The N719 dye loaded ZnO film doped with 0.5mol% Ag has the highest absorbance in the visible region as compared to other two samples. The fill factor values of the pure and ZnO doped with 0.5 and 1.5mol% Ag were 0.47, 0.48 and 0.42, respectively. The short circuit density values for ZnO, ZnO:Ag0.5% and ZnO:Ag1.5% were found to be 1.50, 1.55 and 1.15 A?m/cm2, respectively. The calculated photon to electron efficiencies for the ZnO films with 0, 0.5 and 1.5mol% of silver were 0.42%, 0.44% and 0.27%, respectively. Consequently future prospective of such type of dopants in ZnO film based dye sensitized solar cells seems to be bright.


2013 ◽  
Vol 17 (06n07) ◽  
pp. 573-586 ◽  
Author(s):  
Çiğdem Yağcı ◽  
Ahmet Bilgin

A phthalonitrile precursor 4-(3-hydroxypropylmercapto)phthalonitrile (3) was synthesized via a base-catalyzed nucleophilic aromatic nitro displacement of 4-nitrophthalonitrile with the 3-mercapto-1-propanol. A novel tetrasubstituted metal-free phthalocyanine (4) ( M = 2 H ) and its metal complexes (5–8) ( M = Zn , Ni , Cu and Co ) bearing 3-hydroxypropylmercapto moieties were prepared by the cyclotetramerization reaction of (3) with the appropriate materials. The visible spectra of the zinc(II) phthalocyanine (5) was recorded with different concentrations and different ions as Ag +, Hg 2+ and Pb 2+ in DMF and also with different solvents as dimethylformamide and pyridine. Fluorescence spectrum of the compound (5) was also studied. Temperature and frequency dependence of AC conductivity for (4–8) was investigated in air and under vacuum and were found to be ~10-8–10-5 S.m-1. Thermal properties of the phthalocyanines were examined by differential scanning calorimetry. All the novel compounds have been characterized by elemental analysis, UV-vis, FT-IR, NMR and MS spectral data and DSC techniques.


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