Effect of Substrate on Crystallization of Sol-Gel-Derived Pb(Zr0.52Ti0.48)O3 Thin Films by Microwave Annealing

2013 ◽  
Vol 750 ◽  
pp. 212-215
Author(s):  
Zhan Jie Wang ◽  
Yan Na Chen
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Microwave Irradiation ◽  
Ferroelectric Property ◽  
Sol Gel ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Microwave Annealing ◽  
Microwave Magnetic Field ◽  
Pzt Films

Amorphous Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on LNO/SiO2/Si and Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by microwave irradiation in the microwave magnetic field. The crystalline phases and microstructures as well as ferroelectric property of the PZT films were investigated, and the effect of substrate on crystallization of PZT thin films heated by microwave annealing was discussed. The PZT films on LNO/SiO2/Si substrate show a highly (100)-preferred orientation, and better ferroelectric property than those on Pt/Ti/SiO2/Si substrate. The results demonstrated that LNO/SiO2/Si substrate is advantage for annealing of PZT thin films by microwave irradiation in the microwave magnetic field.

PREPARATION AND FERROELECTRIC PROPERTY OF (100)-ORIENTED Ca0.4Sr0.6Bi4Ti4O15 THIN FILM ON Pt/Ti/SiO2/Si SUBSTRATE

2010 ◽  
Vol 17 (05n06) ◽  
pp. 445-449 ◽  
Author(s):  
SUHUA FAN ◽  
QUANDE CHE ◽  
FENGQING ZHANG
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ferroelectric Property ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Sem Analysis ◽  
Si Substrate ◽  
Degree Of Orientation ◽  
Equiaxed Grains

The (100)-oriented Ca0.4Sr0.6Bi4Ti4O15(C0.4S0.6BTi ) thin film was successfully prepared by a sol-gel method on Pt/Ti/SiO2/Si substrate. The orientation and formation of thin films under different annealing schedules were studied using XRD and SEM. XRD analysis indicated that (100)-oriented C0.4S0.6BTi thin film with degree of orientation of I(200)/I(119) = 1.60 was prepared by preannealing the film at 400°C for 3 min followed by rapid thermal annealing at 800°C for 5 min. SEM analysis further indicated that the (100)-oriented C0.4S0.6BTi thin film with a thickness of about 800 nm was mainly composed of equiaxed grains. The remanent polarization and coercive field of the film were 16.1 μC/cm2 and 85 kV/cm, respectively.

Electrooptic Properties of Pzt thin Films for Image Storage Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
D. Dimos ◽  
R.W. Schwartz
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Films ◽  
Image Storage ◽  
Pzt Thin Films ◽  
Hysteresis Behavior ◽  
Pzt Films ◽  
Induced Changes

AbstractThe photocurrent responses, photo-induced changes in hysteresis behavior, and electrooptic (birefringence) effects of sol-gel derived PZT films have been characterized as part of an effort to evaluate ferroelectric films for image storage and processing applications.

Fabrication and Sensing Properties of PSZT Thin Films for Micro-Force Sensors

2009 ◽  
Vol 60-61 ◽  
pp. 246-250
Author(s):  
Yan Cui ◽  
Hui Lin Chen ◽  
Er Lei Shi ◽  
Jia Xin Zhao ◽  
Li Ding Wang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dissipation Factor ◽  
Annealing Process ◽  
Dielectric Measurement ◽  
Si Substrate ◽  
Rapid Thermal Annealing Process ◽  
Pzt Thin Films ◽  
Thermal Annealing Process ◽  
Sensing Sensitivity

Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol–gel method combined with a rapid thermal annealing process. The microstructure analysis of the thin films showed that the orientation ratio of (111) was 0.304，0.475 and 0.849 with x=0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O3(PZT) thin films greatly improved the dielectric properties of PZT thin films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648，which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03. Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN were realized as x increased, respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.

EFFECT OF PRE-HEATING TEMPERATURE ON THE CHARACTERISTICS OF PZT THIN FILMS GROWN BY USING A TRIOL SOL–GEL ROUTE

2007 ◽  
Vol 14 (02) ◽  
pp. 229-234
Author(s):  
SARAWUT THOUNTOM ◽  
MANOCH NAKSATA ◽  
KENNETH MACKENZIE ◽  
TAWEE TUNKASIRI
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Heating Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ferroelectric Hysteresis

Lead zirconate titanate (PZT) films with compositions near the morphotropic phase boundary were fabricated on Pt (111)/ Ti / SiO 2/ Si (100) using the triol sol–gel method. The effect of the pre-heating temperature on the phase transformations, microstructures, electrical properties, and ferroelectric properties of the PZT thin films was investigated. Randomly oriented PZT thin films pre-heated at 400°C for 10 min and annealed at 600°C for 30 min showed well-defined ferroelectric hysteresis loops with a remnant polarization of 26.57 μC/cm2 and a coercive field of 115.42 kV/cm. The dielectric constant and dielectric loss of the PZT films were 621 and 0.0395, respectively. The microstructures of the thin films are dense, crack-free, and homogeneous with fine grains about 15–20 nm in size.

Fatigue and Aging in Sol-Gel Derived PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
W.H. Shepherd
Keyword(s):  
Thin Films ◽  
Initial Period ◽  
Sol Gel ◽  
Temperature Sensitive ◽  
Physical Processes ◽  
Pzt Thin Films ◽  
Fatigue Process ◽  
Dielectric Layers ◽  
Pzt Films ◽  
Internal Bias

ABSTRACTTypical fatigue and aging characteristics are reported for thin PZT films prepared using sol-gels. The fatigue process occurs in two steps. There is an initial period, during which the domain matrix of the as formed film is restructured by the cycling and the polarization generally increases, followed by a period in which the polarization decays. The polarization decay may be due, in part, to the formation of dielectric layers at the electrodes. The effects of voltage and temperature on fatigue are reported. Aging is examined as a function of temperature. Measurements of internal bias fields do not support the view that they are the primary cause of aging. Neither fatigue nor aging are temperature sensitive making identification of specific physical processes difficult.

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

Effect of sol-gel preparation method on particle morphology in pure and nanocomposite PZT thin films

2011 ◽  
Vol 65 (5) ◽  
Author(s):  
Helena Bruncková ◽  
Ľubomír Medvecký ◽  
Pavol Hvizdoš
Keyword(s):  
Thin Films ◽  
Preparation Method ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Gel Method ◽  
X Ray ◽  
Sol Gel Method ◽  
Pzt Film ◽  
Pzt Films ◽  
Double Scale

AbstractDouble-scale composite lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) thin films of 360 nm thickness were prepared by a modified composite sol-gel method. PZT films were deposited from both the pure sol and the composite suspension on Pt/Al2O3 substrates by the spin-coating method and were sintered at 650°C. The composite suspension formed after ultrasonic mixing of the PZT nanopowder and PZT sol at the powder/sol mass concentration 0.5 g mL−1. PZT nanopowder (≈ 40–70 nm) was prepared using the conventional sol-gel method and calcination at 500°C. Pure PZT sol was prepared by a modified sol-gel method using a propan-1-ol/propane-1,2-diol mixture as a stabilizing solution. X-ray diffraction (XRD) analysis indicated that the thin films possess a single perovskite phase after their sintering at 650°C. The results of scanning electron microscope (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses confirmed that the roughness of double-scale composite PZT films (≈ 17 nm) was significantly lower than that of PZT films prepared from pure sol (≈ 40 nm). The composite film consisted of nanosized PZT powder uniformly dispersed in the PZT matrix. In the surface micrograph of the film derived from sol, large round perovskite particles (≈ 100 nm) composed of small spherical individual nanoparticles (≈ 60 nm) were observed. The composite PZT film had a higher crystallinity degree and smoother surface morphology with necklace clusters of nanopowder particles in the sol-gel matrix compared to the pure PZT film. Microstructure of the composite PZT film can be characterized by a bimodal particle size distribution containing spherical perovskite particles from added PZT nanopowder and round perovskite particles from the sol-matrix, (≈ 30–50 nm and ≈ 100–120 nm), respectively. Effect of the PZT film preparation method on the morphology of pure and composite PZT thin films deposited on Pt/Al2O3 substrates was evaluated.

Pzt Thin Films on a Lead Titanate Interlayer Prepared by rf Magnetron Sputering

1993 ◽  
Vol 310 ◽  
Author(s):  
P. H. Ansari ◽  
A. Safari
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Titanate ◽  
Silicon Oxide ◽  
Perovskite Phase ◽  
Dissipation Factor ◽  
Lead Zirconate ◽  
Si Substrate ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractFerroelectric lead zirconate titanate (PZT) films with a composition near the morphotropic phase boundary have been deposited by if magnetron sputtering on a Si substrate coated with silicon oxide, titanium, and platinum (Si/SiO2/Ti/Pt). Substrate temperature and oxygen partial pressure were changed during deposition to prepare films with controlled stoichiometry and perovskite structure. The effects of lead titanate (PT) as a buffer layer were investigated. Thin films of PT/PZT have a dielectric constant of 800 with a dissipation factor of 0.04 at 1 kHz. The remnant polarization of 8μC/cm2 and the coercive field of 50 kV/cm were measured. The effect of processing on the formation of perovskite phase and the electrical properties will be discussed.

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