Formation of Graphene onto Atomically Flat 6H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 1158-1161 ◽  
Author(s):  
Gemma Rius ◽  
Narcis Mestres ◽  
Yayoi Tanaka ◽  
Hidetoshi Miyazaki ◽  
Osamu Eryu ◽  
...  
Keyword(s):  
Electronic Devices ◽  
High Hardness ◽  
Wide Band ◽  
Single Step ◽  
Wide Band Gap ◽  
Thermal Decomposition Process ◽  
Chemical Inertness ◽  
And Control ◽  
Atomically Flat ◽  
Selective Formation

SiC crystal is a wide band gap material of high hardness and chemical inertness. Graphene is nowadays a ubiquitous 2D material that would revolutionize many applications. Combining the characteristics of SiC and graphene higher performance and efficiency are expected, e.g. for high frequency electronic devices. The obtaining of graphene directly on SiC substrates by a single step thermal decomposition process is promising, but optimal standardized conditions are not established. We present the use of chemical-mechanical polishing (CMP) as a pre-graphene growth SiC conditioning to enable deep comprehension of the mechanisms of SiC decomposition and control towards selective formation of graphene.

Fluctuation Microscopy Studies of Amorphous Diamond-Like Carbon Films

2000 ◽  
Vol 6 (S2) ◽  
pp. 432-433
Author(s):  
X. Chen ◽  
J. M. Gibson ◽  
J. Sullivan
Keyword(s):  
Electronic Devices ◽  
High Hardness ◽  
Carbon Films ◽  
Optical Coatings ◽  
Diamond Like Carbon ◽  
Electron Loss ◽  
Negative Electron Affinity ◽  
Chemical Inertness ◽  
Potential Applications ◽  
Key Questions

Hydrogen-free amorphous diamond-like carbon films have stimulated great interest because of their useful properties, such as high hardness, chemical inertness, thermal stability, wide optical gap, and negative electron affinity[l]. Consequently, they may have various potential applications in mechanical and optical coatings, MEMS systems, chemical sensors and electronic devices. Amorphous diamond-like carbon films often contains significant amounts of four-fold or sp3 bonded carbon, in contrast to amorphous carbon films prepared by evaporation or sputtering which consist mostly of three-fold or sp2 bonded carbon. The ratio and the structure configurations of these three-fold and four-fold carbon atoms certainly decide the properties of these amorphous diamond-carbon films. Although the ratio of three-fold and four-fold carbon has been studied with Raman spectroscopy and electron-loss-energy spectroscopy, very little has been understood regarding key questions such as how the three-fold and the four-fold carbon atoms are integrated in the film, and what structures those three-fold carbon atoms take.

Wide Band Gap Electronic Devices

1995 ◽  
pp. 453-461
Author(s):  
V. E. Chelnokov ◽  
K. V. Vassilevski ◽  
V. A. Dmitriev
Keyword(s):  
Band Gap ◽  
Electronic Devices ◽  
Wide Band ◽  
Wide Band Gap

Visible and Deep Ultraviolet Study of SiC/SiO2 Interface

2012 ◽  
Vol 711 ◽  
pp. 118-123
Author(s):  
Pawel Borowicz ◽  
Tomasz Gutt ◽  
Tomasz Malachowski ◽  
Mariusz Latek
Keyword(s):  
Oxidation Process ◽  
Electronic Devices ◽  
Wide Band ◽  
Charge Carriers ◽  
Wide Band Gap ◽  
Surface Mobility ◽  
Mobility Of Charge Carriers ◽  
Deep Ultraviolet ◽  
The Subject ◽  
Non Destructive

Silicon carbide (SiC) is a wide band gap semiconductor having good thermal conductivity and high break down voltage. Formation of SiO2layer in thermal oxidation process completes the set of properties of SiC as a promising material for fabrication of high power and high frequency electronic devices. This picture is perturbed by Near Interface Traps (NIT's) that decrease the surface mobility of charge carriers. The origin of NIT's is still the subject of discussion and there are several candidates for NIT's. One possibility is the formation of carbonic structures during the process of manufacturing of MOS-type structures. The aim of this work was to look for possible carbonic inclusions with Raman spectroscopy. The attention of authors was focused on non-destructive way of application of the experimental technique.

The Effect of Mixed Abrasive Slurry on CMP of 6H-SiC Substrate

2008 ◽  
Vol 569 ◽  
pp. 133-136 ◽  
Author(s):  
Ho Jun Lee ◽  
Boum Young Park ◽  
Hyun Seop Lee ◽  
Suk Hoon Jeong ◽  
Heon Deok Seo ◽  
...  
Keyword(s):  
Removal Rate ◽  
Substrate Surface ◽  
High Hardness ◽  
Wide Band ◽  
Mechanical Polishing ◽  
Chemical Effect ◽  
Wide Band Gap ◽  
Mechanical Removal ◽  
Device Applications ◽  
Mechanical Factors

Silicon carbide (SiC) is a wide band gap semiconductor being developed for high temperature, high power, and high frequency device applications. For the manufacturing of SiC to semiconductor substrate, many researchers have studied on the subject of SiC polishing. However, SiC faces many challenges for wafer preparation prior to epitaxial growth due to its high hardness and remarkable chemical inertness. A smooth and defect free substrate surface is important for obtaining good epitaxial layers. Therefore, hybrid process, chemical mechanical polishing (CMP) has been proposed to achieve epi-ready surface. In this paper, the material removal rate (MRR) is investigated to recognize how long the CMP process continues to remove a damaged layer by mechanical polishing using 100 nm sized diamond, and the authors tried to find the dependency of mechanical factors such as pressure, velocity and abrasive concentration using single abrasive slurry (SAS). Especially, the authors tried to get an epi-ready surface with mixed abrasive slurry (MAS). The addition of the 25nm sized diamond in MAS provided strong synergy between mechanical and chemical effects resulting in low subsurface damage. Through experiments with SAS and MAS, it was found that chemical effect (KOH based) was essential and atomic-bit mechanical removal was efficient to remove residual scratches in MAS. This paper concluded that SiC CMP mechanism was quite different from that of relatively soft material to achieve both of high quality surface and MRR.

Synthesis of Various ZnO Nanotree Morphologies through PEG-Assisted Co-Precipitation Method

2015 ◽  
Vol 1112 ◽  
pp. 66-70 ◽  
Author(s):  
Robert Mahendra ◽  
Mariesta Arianti ◽  
Dyah Sawitri ◽  
Doty Dewi Risanti
Keyword(s):  
Wide Band ◽  
Volume Density ◽  
Zinc Nitrate ◽  
Single Step ◽  
Precipitation Method ◽  
Transparent Electronics ◽  
Wide Band Gap ◽  
Wide Range ◽  
Co Precipitation ◽  
Branched Nanostructures

ZnO, with direct wide band gap of 3.37 eV and high excitonic binding energy of 60 meV has been attracting much attention due to its wide range of applications, for transparent electronics, solar cells, and other optoelectronics device. We present a simple, single step process to produce ZnO nanotrees using co-precipitation method. As a precursor, zinc nitrate dehydrate was stabilized by hexamethylene tetraamine (HMTA) and 3-9 mM polyethylene glycol (PEG) was added at 180°C for 3-6 hours followed by residual polymer removal. Scanning Electron Microscopy revealed the typical rod-like branched nanostructures were achieved. For longer annealing time the PEG-assisted growth process indeed exhibited a distinctive c-direction inhibition responsible for the lateral growth and subsequent branching of ZnO, in which the branch growth in sample with PEG amount of 0.05 g is the slowest. Some amounts of PEG up to 0.03 g are sensitive to affect several parameters, such as, lattice stress, unit cell volume, density of film and dislocation density.

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