Study of Surface Morphologies of On-Axis 6H-SiC Wafer after High-Temperature Etching and Epitaxial Growth

2014 ◽  
Vol 778-780 ◽  
pp. 197-200
Author(s):  
Xue Chao Liu ◽  
Biao Shi ◽  
Jun Xin ◽  
Wei Huang ◽  
Xi Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Unit Cell ◽  
Lateral Growth ◽  
Layer Surface ◽  
Edge Region ◽  
Homoepitaxial Growth ◽  
Cell Height ◽  
Surface Morphologies ◽  
Sic Wafer

Gas etching and homoepitaxial growth on a nominally on-axis 2-inch 6H-SiC (0001) Si-face were studied. Regular steps with one unit cell height and complex pattern with facets and steps were observed after gas etching in the central region and edge region, respectively. The homoepitaxial growth shows that the complex (facets & steps) pattern expands and merges during the growth to bring on a rough epi-layer surface in the edge region. The steps with one unit cell height on the substrate split into steps with bilayers on the epilayer. The different lateral growth rates of <11-20>- and <1-100>-orientated steps make the width of steps orientated to <11-20> much larger than the ones orientated to <1-100>.

Control of the Surface Morphology on Low Off Angled 4H-SiC Homoepitaxal Growth

2009 ◽  
Vol 615-617 ◽  
pp. 113-116 ◽  
Author(s):  
Kazutoshi Kojima ◽  
Hajime Okumura ◽  
Kazuo Arai
Keyword(s):  
Surface Morphology ◽  
Epitaxial Growth ◽  
Epitaxial Layer ◽  
Flow Rate ◽  
Growth Conditions ◽  
Layer Surface ◽  
Specular Surface ◽  
Homoepitaxial Growth ◽  
Angle Difference ◽  
The Face

We have carried out detailed investigations on the influence of the growth conditions and the wafer off angle on the surface morphology of low off angle homoepitaxial growth. We found triangular features to be also serious problems on a 4 degree off 4H-SiC Si-face epitaxial layer surface. The control of the C/Si ratio by controlling the SiH4 flow rate is effective in suppressing the triangular features on 4 degree off Si-face homoepitaxial layer. As regards epitaxial growth on a vicinal off-axis substrate, the small off angle difference of a tenth part of a degree has an influence on the surface morphology of the epitaxial layer. This tendency depends on the face polarity and a C-face can be obtained that has a specular surface with a lower vicinal off angle than a Si-face. By controlling this off angle, a specular surface morphology without a bunched step structure could be obtained on a vicinal off angle 4H-SiC Si-face.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC

2006 ◽  
Vol 527-529 ◽  
pp. 999-1002
Author(s):  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Kenji Fukuda
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Atomic Hydrogen ◽  
High Reliability ◽  
Hydrogen Atmosphere ◽  
Exposed Sample ◽  
New Apparatus ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Sic Wafer

Low-temperature post-oxidation annealing (POA) process of high-reliability thermal oxides grown on 4H-SiC using new apparatus that generates atomic hydrogen radicals by high-temperature catalyzer has been investigated. Atomic hydrogen radicals were generated by thermal decomposition of H2 gas at the catalyzer surface heated at high temperature of 1800°C, and then exposed to the sample at 500°C in reactor pressure of 20 Pa. The mode and maximum values of field-to-breakdown are 11.0 and 11.2 MV/cm, respectively, for the atomic hydrogen radical exposed sample. In addition, the charge-to-breakdown at 63% cumulative failure of the thermal oxides for atomic hydrogen radical exposed sample was 0.51 C/cm2, which was higher than that annealed at 800°C in hydrogen atmosphere (0.39 C/cm2). Consequently, the atomic hydrogen radical exposure at 500°C has remarkably improved the reliability of thermal oxides on 4H-SiC wafer, and is the same effect with high-temperature hydrogen POA at 800°C.

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

High-temperature diffraction experiments and phase diagram of ZrO2 and ZrSiO4

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Akira Yoshiasa ◽  
Tsubasa Tobase ◽  
Hiroshi Arima-Osonoi ◽  
Ken-Ichi Funakoshi ◽  
Osamu Ohtaka ◽  
...  
Keyword(s):  
High Temperature ◽  
Unit Cell ◽  
Cubic Phase ◽  
Imaging Plate ◽  
X Ray Diffraction ◽  
Space Group ◽  
Cell Parameters ◽  
Time Observation ◽  
Short Time ◽  
Clear Change

Abstract High-temperature X-ray diffraction (XRD) experiments up to T = 2710 °C have been performed on ZrSiO4 and ZrO2 powders, using the container-less levitation technique. A two-dimensional imaging plate (IP) detector was used for short-time observation. The diffraction data in a wide area was projected in one dimension. The unit cell parameters, thermal expansions, and c/a ratios for ZrSiO4 (space group I41/amd and Z = 4), tetragonal ZrO2 (space group P42/nmc and Z = 2) and cubic ZrO2 (space group  F m 3   ‾ m $Fm3&#x203e;{}m$ and Z = 4) were measured to understand the high-temperature behaviors. The transition temperature between tetragonal and cubic ZrO2 was specified to be between 2430 and 2540 °C. The pre-transitional behavior was observed around 2200 °C. As no clear change in unit cell volume is evident, the phase boundary between the tetragonal and the cubic phase has been shown to be a positive slope. The ZrO2 and ZrO2–SiO2 phase diagrams are proposed based on the chemical composition and the crystal structure.

Monoclinic-to-orthorhombic phase transition in Cu2(AsO4)(OH) olivenite at high temperature: strain and mode decomposition analyses

2018 ◽  
Vol 82 (2) ◽  
pp. 347-365 ◽  
Author(s):  
Serena C. Tarantino ◽  
Michele Zema ◽  
Athos M. Callegari ◽  
Massimo Boiocchi ◽  
Michael A. Carpenter
Keyword(s):  
Phase Transition ◽  
High Temperature ◽  
Single Crystal ◽  
Volume Expansion ◽  
Monoclinic Phase ◽  
Orthorhombic Phase ◽  
Unit Cell ◽  
The Other ◽  
Unit Cell Parameters ◽  
Cell Parameters

ABSTRACTA natural olivenite single crystal was submitted to in situ high-temperature single-crystal X-ray diffraction from room temperature (RT) to 500°C. Unit-cell parameters were measured at regular intervals of 25°C, and complete datasets collected at T = 25, 50, 100, 150, 200, 250, 300, 400 and 500°C. Evolution of unit-cell parameters and structure refinements indicates that olivenite undergoes a structural phase transition from P21/n to Pnnm at ~200°C, and eventually becomes isostructural with the other members of the olivenite-mineral group. Volume expansion with temperature is larger in the monoclinic phase – where it follows a non-linear trend – than in the orthorhombic one. Axial and volume expansion coefficients of the orthorhombic olivenite phase are positive and linear and similar to those of the other Cu-bearing member of the mineral family, namely libethenite, but rather different from those of the Zn-analogue arsenate adamite.Distortion of Cu polyhedra is quite high in the olivenite monoclinic phase at RT and goes towards a relative regularization with increasing T until the phase transition occurs. In the orthorhombic phase, no significant variation of the polyhedral distortion parameters is observed with increasing temperature, and maximum expansion is along the b direction and governed by corner-sharing. Landau potential provides a good representation of the macroscopic changes associated with the phase transition, coupling between the strains and the order parameter is responsible for the nearly tricritical character of the transition.

Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth

2015 ◽  
Vol 821-823 ◽  
pp. 541-544 ◽  
Author(s):  
Yong Zhao Yao ◽  
Yukari Ishikawa ◽  
Yoshihiro Sugawara ◽  
Koji Sato
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
Chemical Etching ◽  
Flat Surface ◽  
Mechanical Polishing ◽  
Wet Etching ◽  
Surface Damages

To remove the surface damages induced during mechanical polishing (MP) of 4H-SiC, a variety of wet etching recipes and etching conditions were studied. By evaluating the epilayers grown on these etching-treated wafers, it has been found that triangular defects (TRDs) are the main defects originated from the MP-induced damages in these samples. High temperature molten KCl etching at 1100 °C with KOH additive is very effective to remove the damaged surface while keeping a relatively flat surface. Epilayer grown on the KCl+KOH etched wafer showed a TRD density <0.9 cm-2.

Sign in / Sign up

Export Citation Format

Share Document