Residual Stress Measurements of 4H-SiC Crystals Using X-Ray Diffraction
2014 ◽
Vol 778-780
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pp. 453-456
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Keyword(s):
X Ray
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The room temperature residual stress of 4H-SiC wafers has been investigated using a precise X-ray diffraction method. A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the principal plane direction and the radial direction. Optimizing the lateral temperature distribution in growing crystals leads to reduction of residual stress of wafers with high crystal quality.
2019 ◽
Vol 96
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pp. 525-529
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Keyword(s):
2018 ◽
Vol 47
(11)
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pp. 6641-6648
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2006 ◽
Vol 514-516
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pp. 1618-1622
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2007 ◽
Vol 26-28
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pp. 1175-1180
2014 ◽
Vol 996
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pp. 128-134
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