Reduction of Implantation-Induced Point Defects by Germanium Ions in n-Type 4H-SiC
2015 ◽
Vol 821-823
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pp. 347-350
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Keyword(s):
We have investigated the electrical properties of germanium-implanted n-type 4H-SiC epitaxial layers. Deep level transient spectroscopy (DLTS) was employed in order to study the influence of germanium ions on implantation-induced point defects. In particular, we observe a decrease of the concentration of Z1/2defect with increasing dose of implanted germanium.
2005 ◽
Vol 108-109
◽
pp. 279-284
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2005 ◽
Vol 108-109
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pp. 109-114
2003 ◽
Vol 433-436
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pp. 387-390
2017 ◽
Vol 897
◽
pp. 238-241
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2018 ◽
Vol 924
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pp. 253-256
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