Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

2005 ◽  
Vol 483-485 ◽  
pp. 401-404 ◽  
Author(s):  
Julien Pernot ◽  
Sylvie Contreras ◽  
Jean Camassel ◽  
Jean-Louis Robert

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.


1999 ◽  
Vol 607 ◽  
Author(s):  
S.R. Smith ◽  
A.O. Evwaraye ◽  
M.C. Ohmer ◽  
P. J. Drevinsky ◽  
D. F. Bliss

AbstractBrudnyi, et al., and Zwieback, et al., have shown that introducing damage by irradiation with MeV electrons can alter the electrical and optical properties of undoped p-type CdGeAs2(CGA) crystals. Brudnyi's studies of the electrical transport properties of isochronally annealed samples demonstrated type conversion and identified at least two new centers, one a stable donor. Zwieback used multi-MeV electrons to introduce compensating donors, thereby, significantly improving the optical transparency of CGA crystals. However, at the present little is known about these centers. Therefore, we have studied these centers by observing the properties of electron-irradiated specimens using Thermal Admittance Spectroscopy (TAS) and correlated the results of these measurements with capacitance-voltage measurements and Hall effect measurements. Measurements before an after irradiation are compared. The as-grown native acceptor concentrations in our samples varied from a low in the mid 1016 cm−3to nearly 1019 cm−3. Significant changes in the electrically active states in the band gap were seen as a result of a single irradiation with 2 MeV electrons to a total dose of 5 × 105cm−2. The samples appear to respond more strongly than Brudnyi's samples. The thermal activation energies have been determined using TAS and they will be reported.


2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744056 ◽  
Author(s):  
Jing-Jing Yang ◽  
Gang Wang ◽  
Wen-Han Du ◽  
Chao Xiong

The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films, three kinds of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn[Formula: see text]Mg[Formula: see text]O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn[Formula: see text]Mg[Formula: see text]O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.


2018 ◽  
Vol 924 ◽  
pp. 667-670
Author(s):  
Yan Jing He ◽  
Hong Liang Lv ◽  
Xiao Yan Tang ◽  
Qing Wen Song ◽  
Yi Meng Zhang ◽  
...  

P-type implanted metal oxide semiconductor capacitors (MOSCAPs) and metal oxide semiconductor field effect transistors (MOSFETs) have been fabricated. The characteristics of hole trapping at the interface of SiO2/SiC are investigated through capacitance-voltage (CV) measurements with different starting voltages. The negative shift voltage ∆Vshift and the hysteresis voltages ∆VH which caused by the hole traps in the MOSCAPs and MOSFETs are extracted from CV results. The results show that the hole traps extracted from MOSCAPs are larger than the that extracted from the threshold voltage shift in the MOSFETs. It suggests holes trapping are the primary mechanism contributing to the NBTI, but not all the holes work. Part of the hole traps are compensation by sufficient electrons in the MOSFET structure.


1997 ◽  
Vol 478 ◽  
Author(s):  
T. M. Tritt ◽  
M. L. Wilson ◽  
R. L. Littleton ◽  
C. Feger ◽  
J. Kolis ◽  
...  

AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.


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