Structural and electrical properties of ZnO/Zn0.85Mg0.15O thin film prepared by pulsed laser deposition

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744056 ◽  
Author(s):  
Jing-Jing Yang ◽  
Gang Wang ◽  
Wen-Han Du ◽  
Chao Xiong
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Lattice Structure ◽  
Quantum Effect ◽  
Impurity Scattering ◽  
Hexagonal Wurtzite Structure ◽  
Electrical Transport Properties ◽  
Typical Material ◽  
Structural And Electrical Properties ◽  
Dimensional Electron Gas

The electrical transport properties are the key factors to determine the performance of ZnO-based quantum effect device. ZnMgO is a typical material to regulate the band of ZnO. In order to investigate the electrical properties of the interface of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films, three kinds of ZnO/Zn[Formula: see text]Mg[Formula: see text]O films have been fabricated with different thickness. After comparing the structural and electrical properties of the samples, we found that the independent Zn[Formula: see text]Mg[Formula: see text]O hexagonal wurtzite structure (002) peak can be detected in XRD spectra. Hall-effect test data confirmed that the two-dimensional electron gas (2DEG) became lower because of the decrease of thickness of Zn[Formula: see text]Mg[Formula: see text]O films, increase of impurity scattering and lattice structure distortion caused by the increase of Mg content.

Effects of Incommensuracy on the Structural and Electrical Properties in PbTe-Bi Superlattice Films

1984 ◽  
Vol 37 ◽  
Author(s):  
Sung-Chul Shin
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Electrical Transport ◽  
Exponential Dependence ◽  
Electrical Transport Properties ◽  
X Ray ◽  
Growth Orientation ◽  
Structural And Electrical Properties

AbstractWe studied the structural and electrical transport properties of incommensurate PbTe-Bi superlattice films. The properties of those samples were noticeably different from those of commensurate samples. For the incommensurate samples, the satellite peaks, in the 9–29 x-ray scans along the [111] growth orientation, became broader and the ratio of satellite intensities to the Bragg intensity became smaller. The resistances of incommensurate samples were about three times larger than those of corresponding commensurate ones. These features are interpreted by an enhancement of the lateral nonuniformity of interfaces in incommensurate samples. The exponential dependence of the resistance on temperature in incommensurate samples was also in contrast to the logarithmic behavior observed in commensurate ones.

A THEORETICAL INVESTIGATION OF THE ELECTRICAL PROPERTIES OF ZnMgO/ZnO HETEROJUNCTION FIELD EFFECT TRANSISTOR

2013 ◽  
Vol 27 (23) ◽  
pp. 1350170 ◽  
Author(s):  
MOHAMMAD AMIRABBASI
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Effective Parameters ◽  
Electrical Transport Properties ◽  
Effect Transistor ◽  
Dimensional Electron Gas ◽  
Current Drain

In this paper, I have tried to analyze the electrical properties and the experimental data related to drain current–drain voltage of the Zn 0.7 Mg 0.3 O / ZnO / Zn 0.7 Mg 0.3 O heterojunction field effect transistor by use of Hoffman nonideal model theoretically. Also by use of different scattering mechanisms in two-dimensional electron gas structures, I have studied the electrical transport properties of this structure and most important effective parameters for controlling electron mobility in the range of 75 to 300 K have been studied theoretically.

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Non-Stoichiometry and Structure of SrCe1-xYbxO3 Perovskite-Type Oxides

1996 ◽  
Vol 453 ◽  
Author(s):  
Igor Kosacki ◽  
Mark Shumsky ◽  
Harlan U. Anderson
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Charge Carrier ◽  
Structural Properties ◽  
Electrical Transport ◽  
Structural Disorder ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Perovskite Type

AbstractThe structural and electrical properties of SrCe1-xYbxO3 ceramics have been studied as a function of temperature and Yb-concentration using x-ray diffraction and impedance techniques. The influence of Yb-dopants on electrical transport and structural disorder has been studied. A correlation between the structural properties, electrical conductivity is observed and discussed. These measurements allow us to determine the mechanism of charge carrier compensation and also the concentration and mobility of the electrical species.

Structural and electrical properties of Nd1.7Ba0.3Ni0.9Cr0.1O4+δ compound

2012 ◽  
Vol 27 (3) ◽  
pp. 184-188 ◽  
Author(s):  
Manel Jammali ◽  
Rached Ben Hassen ◽  
Jan Rohlicek
Keyword(s):  
Electrical Transport ◽  
Small Polaron ◽  
Sol Gel ◽  
Polycrystalline Sample ◽  
Xrd Analysis ◽  
Electrical Transport Properties ◽  
Polaron Hopping ◽  
X Ray ◽  
Cell Parameters ◽  
Structural And Electrical Properties

The Nd1.7Ba0.3Ni0.9Cr0.1O4+δ polycrystalline sample was synthesized by the sol–gel process and a subsequent annealing at 1523 K in 1 atm of flowing argon. X-ray diffraction (XRD) analysis and electrical transport properties have been investigated as well. The oxygen non-stoichiometry was determined by iodometric titration. The sample shows adoption of the K2NiF4-type structure based on a tolerance factor calculation. Rietveld refinement of the crystal structure from X-ray powder diffraction data confirmed that Nd1.7Ba0.3Ni0.9Cr0.1O4+δ adopts the tetragonal structure (space group I4/mmm, Z = 2). The room temperature unit-cell parameters are determined to be a = 3.82515(2) and c = 12.47528(6) Å. The reliability factors are: RB = 0.043, Rwp = 0.012 and χ2 = 3.00. The Nd1.7Ba0.3Ni0.9Cr0.1O4+δ compound exhibits a semi-conductive behaviour. The electrical transport mechanism has been investigated and it agrees with the adiabatic small polaron hopping model in the temperature range 313 K ≤ T ≤ 708 K.

Investigation of Photoinduced Electrical Properties in the Heterojunction TiO2/SnO2

2014 ◽  
Vol 975 ◽  
pp. 201-206
Author(s):  
Diego Henrique de Oliveira Machado ◽  
Emerson Aparecido Floriano ◽  
Luis Vicente de Andrade Scalvi ◽  
Margarida Juri Saeki
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Deep Level ◽  
Quartz Substrate ◽  
Dominant Role ◽  
Sol Gel ◽  
Oxide Semiconductor ◽  
External Layer ◽  
Electrical Transport Properties ◽  
Rutile Structure

TiO2/SnO2 thin films heterostructures are grown by the sol-gel-dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550°C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100°C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. Electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65eV) seems to excite the most external layer whereas a InGaN LED (2.75eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.

Study of Electrical Properties of Microcrystalline Silicon Films Using AC Measurements

2001 ◽  
Vol 664 ◽  
Author(s):  
Ely A. T. Dirani ◽  
Alexandre M. Nardes ◽  
Adnei M. Andrade ◽  
Fernando J. Fonseca ◽  
Reginaldo Muccillo
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Dark Conductivity ◽  
Silicon Films ◽  
Electrical Transport Properties ◽  
Large Area ◽  
Average Grain Size

ABSTRACTHydrogenated amorphous (a-Si:H) and microcrystalline (µc-Si:H) silicon films are indispensable materials for large area electronic devices like solar cells, image sensors and thin film transistors (TFTs). The interest of the µc-Si:H films arise from the fact that they combine the high optical absorption of a-Si:H and the electrical transport properties close to those of crystalline silicon. In this work we show the correlation between substrate deposition temperature, crystallinity and electrical properties of a-Si:H and µc-Si:H films. The films were prepared by a conventional PECVD (13.56 MHz) RF system from PH3/SiH4/H2 gas mixtures in the temperature range of 100 to 250°C. While phosphorus doped (n) a-Si:H are deposited yielding conductivity values no better than 10−2 S/cm, (n) µc-Si:H layers deposited at substrate temperature of 250°C show conductivity values higher than 101 S/cm, crystalline fraction up to 80% and Hall mobility of about 0.9 cm2. V−1.s−1. It was observed that a change in the dark conductivity behavior occurs around 140°C, with a large increase in the conductivity values. A corresponding increase is not seen in the average grain size and in the crystalline volume fraction, which shows an almost linear increase with the deposition temperature. This stronger influence of the temperature in the electrical characteristics of the µc-Si:H films may be related to the phosphorus activation, which occurs in higher degree at higher deposition temperatures. The correlation among Raman spectroscopy, Hall effect and AC conductivity measurements (frequency range 6 Hz to 13 MHz) shows that the crystalline phase dominates the electrical transport mechanism in µc-Si:H films. Preliminary results of AC measurements indicate that the electrical resistivity of each phase of this material can be determined.

AN INVESTIGATION ON IMPURITY AND GRAIN BOUNDARY EFFECTS ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF SnO2:F THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

2011 ◽  
Vol 25 (17) ◽  
pp. 1473-1485 ◽  
Author(s):  
HOSEIN ESHGHI ◽  
ALIREZA BIARAM ◽  
MEHDI ADELIFARD
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Spray Pyrolysis ◽  
Electrical Transport ◽  
Spray Pyrolysis Technique ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Electrical Transport Properties ◽  
Preferred Direction

We have investigated the effect of fluorine dopant concentration (0–15 F / Sn wt.%) on structural, optical and electrical properties of SnO 2 thin films grown by spray pyrolysis technique. According to the experimental evidences and data analysis, we found in these samples: (1) the polycrystalline layers, while in undoped conditions it mainly grow along (211) direction in doped ones (200) is the preferred direction with a direct band gap energy of about 3.7–3.9 eV; (2) The main cause for the relatively high absorption coefficients below Eg could be due to the presence of wide (~ 1–2 eV) band tails in the forbidden gap; (3) the highest (5.4 × 10-3 Ω-1) figure of merit belongs to the sample with 5 wt.% F / Sn concentration; (4) the grain boundary scattering is the main limiting mechanism in the electrical transport properties of the layers.

Lattice Structure at ZnSe-GaAs Heterojunction Interfaces Prepared by Organometallic Chemical Vapor Deposition

1982 ◽  
Vol 18 ◽  
Author(s):  
F. A. Ponce ◽  
W. Stutius ◽  
J. G. Werthen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Defect Structure ◽  
Gaas Substrate ◽  
Lattice Structure ◽  
Chemical Vapor ◽  
Electrical Transport Properties ◽  
Substrate Surfaces ◽  
Organometallic Chemical Vapor Deposition

The lattice structure of ZnSe grown on GaAs by a low temperature low pressure organometallic chemical vapor deposition (CVD) process was studied using high resolution transmission electron microscopy. The defect structure of ZnSe epitaxial layers and of their interface with the GaAs substrate was directly imaged in cross section for GaAs substrate surfaces in the <100> and <111> orientations. It is shown that the ZnSe layers grow indeed epitaxially. The ZnSe layers grown on GaAs(100) contain a large density of faulted loops which are extrinsic in nature, whereas the prevailing defects in ZnSe layers grown on GaAs(111)B substrates are microtwins and stacking faults parallel to the filmsubstrate interface. A possible connection between the observed defect structure and the reported photoluminescence and electrical transport properties of ZnSe layers grown by organometallic CVD is also discussed.

scholarly journals Effect of Temperature and Magnetic Dopants on Particle size and Electrical Properties of ZnO Ceramic Varistor

2018 ◽  
Vol 2 (1) ◽  
Keyword(s):  
Electrical Properties ◽  
Nonlinear Coefficient ◽  
Hexagonal Wurtzite Structure ◽  
Xrd Analysis ◽  
Effect Of Temperature ◽  
Breakdown Field ◽  
Valence States ◽  
Structural And Electrical Properties ◽  
Ionic Emission ◽  
Fesem Micrographs

We report here structural and electrical properties of Zn0.95 M0.05O ceramic, M = Zn, Co and Mn. It is found that addition of magnetic doping did not influence the hexagonal wurtzite structure of ZnO. Furthermore, the lattice parameters ratio c/a for hexagonal distortion and the length of the bond parallel u to the c axis were nearly unaffected. The average crystalline diameters, deduced from XRD analysis are 83.75, 72.86 and 70.97 nm for Zn, Mn and Co, which are 15 times lower than those obtained from FESEM micrographs (1570, 1380 and 1150 nm). The breakdown field EB was decreased as the temperature increased, in the following order: Mn> Zn > Co. The nonlinear region was observed for all samples as the temperature increased up to 400 K and completely disappeared with further increase of temperature up to 500 K. The values of nonlinear coefficient, α were between 1.65 and 56 for all samples, in the following order: Mn> Zn > Co. Moreover, the electrical conductivity σ was gradually increased as the temperature increased up to 500 K, in the following order: Co > Zn > Mn. On the other hand, the activation energies were 0.194, 0.155 eV and 0.231 eV for all samples, in the following order Mn, Zn and Co. These results have been discussed in terms of valence states, magnetic moment and thermo-ionic emission which were produced by the doping, and controlling the potential barrier of ZnO.

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