Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

2016 ◽  
Vol 858 ◽  
pp. 701-704
Author(s):  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Filippo Giannazzo ◽  
Simone Rascunà ◽  
Mario Saggio ◽  
...  
Keyword(s):  
High Temperature ◽  
High Resolution ◽  
Electrical Properties ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Activation ◽  
Mos Capacitors ◽  
Capacitance Voltage ◽  
Electrical Effect

In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N2O annealing only.

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers

2016 ◽  
Vol 858 ◽  
pp. 663-666
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Tomasz Sledziewski ◽  
Alexandra Gkanatsiou ◽  
Michael Krieger ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Interface State ◽  
State Density ◽  
Metal Oxide Semiconductor ◽  
Interface State Density ◽  
Device Fabrication ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Oxide Breakdown

In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle.

Angle Resolved XPS Analysis of Surface Region Defects in Rapid Thermal Annealed Antimony Implanted Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
A. Laugier ◽  
B. Canut ◽  
M. Charbonnier
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Dose ◽  
Thermal Treatments ◽  
X Ray ◽  
Capacitance Voltage

AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

2021 ◽  
Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Depth Profiling ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
Experimental Findings ◽  
Electrical Characterizations

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Electrical Properties of Thermally Grown SiO2-SiC Interfaces

1992 ◽  
Vol 242 ◽  
Author(s):  
Nitya N. Singh ◽  
A. Rys ◽  
A. U. Ahmed
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Trap ◽  
Mos Capacitors ◽  
Time Constants ◽  
Fixed Charges ◽  
Emission Time ◽  
Thermally Grown

ABSTRACTFabrication processes of metal-oxide semiconductor (MOS) capacitors on n-type, Si-face, 6H-SiC were studied. The effects of thermal oxidation conditions at temperatures between 1100 and 1250°C on the electrical properties of MOS capacitors were determined. The wafers were annealed under argon to improve the C-V characteristics. C-V characteristics of AI-SiO2-SiC metal-oxide-semiconductor were measured at high frequency in the dark and under illumination. In the dark inversion does not occur, probably owing to the absence of minority carriers due to the large band gap of 6H-SiC. The accumulation, depletion, and inversion regions were clearly observed when the C-V measurements were made under illumination for both wet and dry thermally grown oxides. The interface trap densities and emission time constants of fast states were determined by ac conductance measurements. From the analysis of data we obtained a total of Fixed charges and the slow interface traps, Nf + NssSlow of 1.5 to 3.3 × 1012 cm-2, fast interface trap densities, NssFast of 0.5 to 1.7 × 1011 cm-2 eV-1 and emission times constant of 0.3 to 1.4 μsec for wet oxidation. For dry oxidation, Nf + N, ssSlow of 3.5 to 11.2 × 10cm-2, NssFast of 0.7 to 1.25 × 1010 cm-2 eV-1 and emission time constants of 0.6 to 2 μsec were obtained.

X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

2016 ◽  
Vol 858 ◽  
pp. 659-662 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Claude Marcandella ◽  
Marc Gaillardin ◽  
...  
Keyword(s):  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Additional Contribution ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
X Ray ◽  
Annealing Conditions ◽  
Capacitance Voltage ◽  
Post Deposition

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing (PDA) processes in N2O or POCl3 atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl3-annealed oxide respect to the N2O annealed is discussed.

Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

2007 ◽  
Vol 556-557 ◽  
pp. 643-646 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Kuan Yew Cheong ◽  
Da Il Eom ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors

We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

2014 ◽  
Vol 778-780 ◽  
pp. 599-602 ◽  
Author(s):  
Stephen M. Thomas ◽  
Michael R. Jennings ◽  
Yogesh K. Sharma ◽  
Craig A. Fisher ◽  
Philip A. Mawby
Keyword(s):  
Metal Oxide Semiconductor ◽  
Oxidation Temperature ◽  
Oxide Semiconductor ◽  
Oxygen Flow ◽  
Low Oxygen ◽  
Mos Capacitors ◽  
Flow Rates ◽  
Ambient Oxygen ◽  
Capacitance Voltage ◽  
Order Of Magnitude

Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) and oxidation temperature (1200°C-1600°C) on the Dit is investigated. The Dit was reduced by up to an order of magnitude using a combination of a low oxygen flow rate and a high temperature. The Dit was extracted from capacitance-voltage measurements made on MOS capacitors.

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