X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

2016 ◽  
Vol 858 ◽  
pp. 659-662 ◽  
Author(s):  
Marilena Vivona ◽  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Claude Marcandella ◽  
Marc Gaillardin ◽  
...  
Keyword(s):  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Response ◽  
Additional Contribution ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
X Ray ◽  
Annealing Conditions ◽  
Capacitance Voltage ◽  
Post Deposition

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing (PDA) processes in N2O or POCl3 atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl3-annealed oxide respect to the N2O annealed is discussed.

Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(1120) interfaces

2021 ◽  
Author(s):  
Takato Nakanuma ◽  
Yu Iwakata ◽  
Arisa Watanabe ◽  
Takuji Hosoi ◽  
Takuma Kobayashi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Depth Profiling ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
X Ray ◽  
Capacitance Voltage ◽  
Experimental Findings ◽  
Electrical Characterizations

Abstract Nitridation of SiO2/4H-SiC(1120) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning x-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capacitors were conducted through capacitance-voltage (C–V) measurements in the dark and under illumination with ultraviolet light to evaluate the electrical defects near the conduction and valence band edges and those causing hysteresis and shifting of the C–V curves. While all of these defects were passivated with the progress of the interface nitridation, excessive nitridation resulted in degradation of the MOS capacitors. The optimal conditions for NO-POA are discussed on the basis of these experimental findings.

Trapping States in SiO2/GaN MOS Capacitors Fabricated on Recessed AlGaN/GaN Heterostructures

2016 ◽  
Vol 858 ◽  
pp. 1178-1181
Author(s):  
Patrick Fiorenza ◽  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Antonino Parisi ◽  
Santo Reina ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Response Time ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Mos Capacitors ◽  
Hydrogen Incorporation ◽  
Characteristic Response ◽  
Post Deposition

In this work, the different nature of trapping states in metal-oxide-semiconductor (MOS) capacitors fabricated on recessed AlGaN/GaN heterostructures has been investigated. In particular, the origin of both fast and slow states has been elucidated by frequency dependent conductance measurements. Using post deposition annealing in forming gas, which is known to induce hydrogen incorporation at the interface, allowed to ascribe the fast traps (with characteristic response time in the range of 5–50 μs) to SiO2/GaN interface states and the slow traps (50–100 μs) to “border traps” located few nanometers inside the SiO2 layer. The results can be useful to predict the behavior of GaN switching devices, like hybrid MOSHEMTs.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy

2007 ◽  
Vol 556-557 ◽  
pp. 647-650 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Dong Hwan Kim ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
Wook Bahng ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Current Density ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Field ◽  
Mos Capacitors ◽  
Dielectric Layers ◽  
Capacitance Voltage ◽  
Mos Structures

We have fabricated advanced metal-oxide-semiconductor (MOS) capacitors with ultra thin (5 nm) remote-PECVD SixNy dielectric layers and investigated electrical properties of nitrided SiO2/4H-SiC interface after oxidizing the SixNy in dry oxygen at 1150 °C for 30, 60, 90 min. Improvements of electrical properties have been revealed in capacitance-voltage (C-V) and current density-electrical field (J-E) measurements in comparison with dry oxide. The improvements of SiC MOS capacitors formed by oxidizing the pre-deposited SixNy have been explained in this paper.

Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O

2016 ◽  
Vol 858 ◽  
pp. 701-704
Author(s):  
Patrick Fiorenza ◽  
Salvatore di Franco ◽  
Filippo Giannazzo ◽  
Simone Rascunà ◽  
Mario Saggio ◽  
...  
Keyword(s):  
High Temperature ◽  
High Resolution ◽  
Electrical Properties ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Activation ◽  
Mos Capacitors ◽  
Capacitance Voltage ◽  
Electrical Effect

In this work, the combined effect of a shallow phosphorus (P) pre-implantation and of a nitridation annealing in N2O on the properties of the SiO2/4H-SiC interface has been investigated. The peak carrier concentration and depth extension of the electrically active dopants introduced by the nitridation and by the combination of P pre-implantation and nitridation were determined by high resolution scanning capacitance microscopy (SCM). Macroscopic capacitance-voltage (C-V) measurements on metal oxide semiconductor (MOS) capacitors and nanoscale C-V analyses by SCM allowed to quantify the electrical effect of the donors introduced underneath the SiO2/4H-SiC interface. Phosphorous pre-implantation and subsequent high temperature electrical activation has been shown not only to produce an increased doping in the 4H-SiC surface region but also a better homogeneity of surface potential with respect to the use of N2O annealing only.

Effects of post-deposition annealing on sputtered SiO 2 /4H-SiC metal-oxide-semiconductor

2018 ◽  
Vol 139 ◽  
pp. 115-120 ◽  
Author(s):  
Suhyeong Lee ◽  
Young Seok Kim ◽  
Hong Jeon Kang ◽  
Hyunwoo Kim ◽  
Min-Woo Ha ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Deposition Annealing ◽  
Post Deposition

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

2011 ◽  
Vol 470 ◽  
pp. 79-84
Author(s):  
Hai Gui Yang ◽  
Masatoshi Iyota ◽  
Shogo Ikeura ◽  
Dong Wang ◽  
Hiroshi Nakashima
Keyword(s):  
Field Effect Transistor ◽  
Surface Reaction ◽  
Hole Concentration ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Back Gate ◽  
Effect Transistor ◽  
Post Deposition

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

Angle Resolved XPS Analysis of Surface Region Defects in Rapid Thermal Annealed Antimony Implanted Silicon

1989 ◽  
Vol 163 ◽  
Author(s):  
S.N. Kumar ◽  
G. Chaussemy ◽  
A. Laugier ◽  
B. Canut ◽  
M. Charbonnier
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Surface Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Dose ◽  
Thermal Treatments ◽  
X Ray ◽  
Capacitance Voltage

AbstractAngle-resolved X-ray photoelectron spectroscopy characterization of the surface region of high-dose Sb+ ion implanted silicon, after rapid thermal treatments over various temperatures, is reported. The results obtained are compared with the Rutherford backscattering data and the capacitance-voltage measurements on the metal-oxide-semiconductor mesa structures built on them. Rapid anneal at 1100 °C of the 1.4×1016 Sb+/cm2 samples showed an anomalous deep oxygen diffusion inside the implanted region.

Shallow Traps at P-Doped SiO2/4H-SiC(0001) Interface

2011 ◽  
Vol 679-680 ◽  
pp. 338-341 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Shinya Kotake ◽  
Tomoaki Hatayama ◽  
Takashi Fuyuki
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Interface Traps ◽  
Channel Mobility ◽  
X Ray ◽  
Capacitance Voltage ◽  
Shallow Traps

We report on electrical and physical investigations aimed to clarify the mechanisms behind the high channel mobility of 4H-SiC metal–oxide–semiconductor field-effect transistors processed with POCl3 annealing. By low-temperature capacitance–voltage analysis, we found that the shallow interface traps are effectively removed by P incorporation. Using x-ray photoelectron spectroscopy, we found that the three-fold coordinated P atoms exist at the oxide/4H-SiC interface. The overall results suggest that P atoms directly remove the Si–Si bonds and thus eliminate the near-interface traps.

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