Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

2017 ◽  
Vol 897 ◽  
pp. 439-442 ◽  
Author(s):  
Roberta Nipoti ◽  
Maurizio Puzzanghera ◽  
Giovanna Sozzi
Keyword(s):  
Carrier Lifetime ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Leakage Currents ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Lower Annealing Temperature ◽  
C 30 ◽  
Post Implantation ◽  
Ion Implanted

The reverse and forward currents of Al+ ion implanted 4H-SiC p+-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×1019 cm-3 against 2×1020 cm-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.

ELECTRICAL CHARACTERISTICS AND CARRIER LIFETIME MEASUREMENTS IN HIGH VOLTAGE 4H-SIC PIN DIODES

2007 ◽  
Vol 17 (01) ◽  
pp. 43-48 ◽  
Author(s):  
P. A. Losee ◽  
C. Li ◽  
R. J. Kumar ◽  
T. P. Chow ◽  
I. B. Bhat ◽  
...  
Keyword(s):  
High Voltage ◽  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Open Circuit ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Pin Diodes ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Photoconductivity Decay

The key material and device parameters governing the electrical performance of high voltage 4 H - SiC PiN diodes have been investigated using experimental results and numerical simulations. Reverse recovery characteristics show an increase in both carrier lifetime and anode injection efficiency at elevated temperature. Open circuit voltage decay measurements are used to estimate carrier lifetimes (τ≈0.6μ s at T =25° C increasing to τ≈2μ s at T =225° C ) that are comparable to values measured on starting material prior to fabrication using micro-wave photoconductivity decay techniques.

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

2009 ◽  
Vol 615-617 ◽  
pp. 703-706 ◽  
Author(s):  
Nicolas Dheilly ◽  
Dominique Planson ◽  
Pierre Brosselard ◽  
Jawad ul Hassan ◽  
Pascal Bevilacqua ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Open Circuit ◽  
Pin Diode ◽  
Electrical Measurements ◽  
Pin Diodes ◽  
Influence Of Temperature ◽  
Voltage Decay ◽  
Influence Of Temperature On ◽  
New Generation

This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

High Voltage P-N Junction Diodes in Silicon Carbide Using Field Plate Edge Termination

1999 ◽  
Vol 572 ◽  
Author(s):  
R. K. Chilukuri ◽  
P. Ananthanarayanan ◽  
V. Nagapudi ◽  
B. J. Baliga
Keyword(s):  
Breakdown Voltage ◽  
Dielectric Material ◽  
High Resistivity ◽  
Leakage Currents ◽  
Plate Edge ◽  
Field Plate ◽  
P Type ◽  
Post Implantation ◽  
Anneal Temperature ◽  
Ion Implanted

ABSTRACTIn this paper, we report the successful use of field plates as planar edge terminations for P+-N as well as N+-P planar ion implanted junction diodes on 6H- and 4H-SiC. Process splits were done to vary the dielectric material (SiO2 vs. Si3N4), the N-type implant (nitrogen vs. phosphorous), the P-type implant (aluminum vs. boron), and the post-implantation anneal temperature. The nitrogen implanted diodes on 4H-SiC with field plates using SiO2 as the dielectric, exhibited a breakdown voltage of 1100 V, which is the highest ever reported measured breakdown voltage for any planar ion implanted junction diode and is nearly 70% of the ideal breakdown voltage. The reverse leakage current of this diode was less than 1×10−5 A/cm2 even at breakdown. The unterminated nitrogen implanted diodes blocked lower voltages (∼840V). In contrast, the unterminated aluminum implanted diodes exhibited higher breakdown voltages (∼80OV) than the terminated diodes (∼275V). This is attributed to formation of a high resistivity layer at the surface near the edges of the diode by the P-type ion implant, acting as a junction termination extension. Diodes on 4H-SiC showed higher breakdown than those on 6H-SiC. Breakdown voltages were independent of temperature in the range of 25 °C to 150 °C, while the leakage currents increased slowly with temperature, indicating surface dominated components.

Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl
Keyword(s):  
Open Circuit Voltage ◽  
Minority Carrier ◽  
Open Circuit ◽  
Time Resolved ◽  
Carrier Lifetimes ◽  
Voltage Decay ◽  
Analysis Technique ◽  
Minority Carrier Lifetimes ◽  
Optical Time ◽  
Time Resolved Photoluminescence

Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.

Properties of Ion Implanted and UHV-CVD Grown Si:Er

1996 ◽  
Vol 422 ◽  
Author(s):  
M. Morse ◽  
B. Zheng ◽  
J. Palm ◽  
X. Duan ◽  
L. C. Kimerling
Keyword(s):  
Ion Implantation ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Implantation Energy ◽  
Lower Annealing Temperature ◽  
C 30 ◽  
Post Implantation ◽  
Donor Activity ◽  
Implanted Devices

AbstractWe have fabricated Si:Er films by ion implantation and ultra-high vacuum chemical vapor deposition (UHV-CVD). The energy of the ion implantation was varied from 200 keV to 4.5 MeV. Oxygen was co-implanted to overlap the erbium profile. At implant energies of 400 keV, we found that the luminescence was optimized at a lower annealing temperature (800° C, 30 minutes) than that needed for the 4.5 MeV implant (900°C, 30 minutes). The light intensity per erbium atom is critically dependent on the implantation energy. However, spreading resistance measurements show that the donor activity of the implanted erbium is independent of energy. We have correlated the donor activity with quantum efficiency by varying the donor spatial distribution and concentration through post implantation heat treatments.For the UHV-CVD grown Si:Er films, two erbium metallorganic precursors, Er(TMHD)3 and Er(FOD)3. have been used for growths from 550–620°C. The thickness of the erbium layers are similar to that of implanted devices but the Er concentration of 4 × 1021/cm3 exceeded the implanted material by two orders of magnitude.

scholarly journals Evaluation of Laser Doping of Si from MCLT Measurement

2004 ◽  
Vol 1 (2) ◽  
pp. 321-325
Author(s):  
Baghdad Science Journal
Keyword(s):  
Open Circuit Voltage ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Laser Energy ◽  
Minority Carrier Lifetime ◽  
Open Circuit ◽  
Experiment Data ◽  
Laser Doping ◽  
Voltage Decay ◽  
Doping Technique

The measurement of minority carrier lifetime (MCLT) ofp-n Si fabricated with aid of laser doping technique was reported. The measurement is achieved by using open circuit voltage decay (OCVD) technique. The experiment data confirms that the value of MCLT and proftle of Voc decay were very sensitive to the doping laser energy.

A Carrier Lifetime Model for the Optical Degradation of Amorphous Silicon Solar Cells

1985 ◽  
Vol 49 ◽  
Author(s):  
Z E. Smith ◽  
S. Wagner
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Silicon Solar Cells ◽  
Carrier Lifetimes ◽  
Bond Density ◽  
Degradation Data

AbstractThe light-induced performance degradation of amorphous silicon solar cells is described well by a model in which the carrier lifetimes are determined by the dangling bond density. The kinetics of the defect generation follow the model in which band-to-band recombination provides the energy for the creation of dangling bonds, which in turn introduce gap states that reduce carrier lifetime. Degradation will be slower in solar cells operating at lower excess carrier concentrations. This is documented with a comparison of degradation data for cells of different i-layer thickness, cells operating at open circuit vs. load, and for single vs. cascade cells. The model also correctly predicts the relation between short circuit current and fill factor degradation. At sufficiently long times, the efficiency will decrease at approximately the same rate for all cell structures and dimensions, with an offset in time between different device types which can be calculated.

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