Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures

2018 ◽  
Vol 924 ◽  
pp. 719-722 ◽  
Author(s):  
Si Yang Liu ◽  
B. Jayant Baliga ◽  
Yi Fan Jiang ◽  
Wei Feng Sun ◽  
Subhashish Bhattacharya ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Temperatures ◽  
Industrial Application ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Silicon Devices

Silicon Carbide (SiC) power MOSFETs become more important in 10kV industrial application level, beginning to replace the silicon devices. Due to the harsh environments, high temperature performances of 10kV SiC MOSFETs must be concerned and understood. In this paper, comprehensive static and dynamic parameters of 10kV SiC MOSFETs have been measured up to 225°C. The device physics behind high temperature behaviors has been analyzed by using the basic analytical models.

Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

2017 ◽  
Vol 897 ◽  
pp. 501-504 ◽  
Author(s):  
Si Yang Liu ◽  
Yi Fan Jiang ◽  
Woong Je Sung ◽  
Xiao Qing Song ◽  
B. Jayant Baliga ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Dynamic Characteristics ◽  
Analytical Models ◽  
Harsh Environments ◽  
Device Physics ◽  
Dynamic Parameters ◽  
Power Mosfets ◽  
Static And Dynamic Characteristics ◽  
Temperature Capability

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.

High Temperature Silicon Carbide CMOS Integrated Circuits

2011 ◽  
Vol 679-680 ◽  
pp. 726-729 ◽  
Author(s):  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
Dave A. Smith ◽  
Robin. F. Thompson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Band Gap ◽  
High Temperatures ◽  
Wide Band ◽  
Cmos Technology ◽  
Cmos Integrated Circuits ◽  
Wide Band Gap ◽  
Circuit Performance

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

High temperature 4H-silicon carbide thyristors and power MOSFETs

1996 ◽  
Author(s):  
John W. Palmour ◽  
Scott T. Allen ◽  
Ranbir Singh ◽  
Lori A. Lipkin ◽  
Douglas G. Waltz
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Mosfets

High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing

2018 ◽  
Vol 6 (32) ◽  
pp. 8613-8617 ◽  
Author(s):  
Tuan-Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Toan Dinh ◽  
Abu Riduan Md Foisal ◽  
Nam-Trung Nguyen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Stability ◽  
Temperature Tolerance ◽  
Harsh Environments ◽  
Harsh Environment ◽  
Piezoresistive Effect ◽  
High Temperature Tolerance ◽  
Chemical Inertness ◽  
Silicon Based

4H-silicon carbide based sensors are promising candidates for replacing prevalent silicon-based counterparts in harsh environments owing to their superior chemical inertness, high stability and reliability.

Performance and Reliability of SiC dies, Die attach and Substrates for High Temperature Power Applications up to 300°C

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000200-000207 ◽  
Author(s):  
Dean Hamilton ◽  
Liam Mills ◽  
Steve Riches ◽  
Philip Mawby
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Transient Liquid Phase ◽  
Cycling Performance ◽  
Aging Effects ◽  
Threshold Voltage Shift ◽  
Power Semiconductor ◽  
Silicon Devices ◽  
Die Attach ◽  
Silver Sinter

The recent commercial availability of silicon carbide power semiconductor devices are theoretically capable of operating at temperatures well beyond the limits of silicon devices and have generated an interest in developing high temperature capable packaging solutions to match. In this work, the performance and reliability of a number of commercially available silicon carbide power MOSFET dies from multiple vendors was determined for die temperatures up to 350°C. Although these results have demonstrated a number of aging effects and very high on-state resistances at high temperatures, it appears that these devices can perform reliably even in air atmospheres for 100 hours or more at 350°C. In addition, commercially available DBC type ceramic-based substrates have been evaluated for their thermal cycling performance and candidate high temperature capable die attach materials including silver sinter paste and tin and gold-tin pre-form based transient liquid phase types have also been evaluated. These results have demonstrated that the active metal brazed substrates, both copper and aluminium variants, in conjunction with the silicon carbide dies and silver sinter die attach may serve as the basis for high temperature power modules, and may be operated reliably in thermal cycled applications and in air atmospheres up to 300°C. Due to large threshold voltage shift of the SiC MOSFETs at these temperatures, it may be necessary to implement a negative gate bias capability. This work has been carried out under the Innovate UK supported project HITEC, led by Prodrive and also including The University of Warwick, GE Aviation Systems, Ricardo, TT Electronics Semelab, Diamond Hard Surfaces and GaN Systems.

Simulation of silicon carbide power MOSFETs at high temperature

1999 ◽  
Vol 43 (2) ◽  
pp. 367-374 ◽  
Author(s):  
S.F Shams ◽  
K.B Sundaram ◽  
L.C Chow
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Mosfets

High Temperature Power Electronics for Gas Turbine Engine Applications

1996 ◽  
Author(s):  
Richard R. Grzybowski ◽  
A. George Foyt
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Early Stage ◽  
Basic Material ◽  
Drive Power ◽  
Large Power ◽  
Turbine Engine ◽  
Power Transistors ◽  
Silicon Devices ◽  
Stage Of Development

The drive power requirements for several representative actuator applications are discussed, and the possibilities of meeting those requirements with conventional silicon electronics, and also with higher temperature capability electronics are presented. For all the usual drive circuits, both normally-off power transistors and conventional diodes are essential. Silicon devices can meet these requirements, if the electronics can be maintained near room temperature. If not, then devices based on other materials systems, such as silicon carbide, are needed. Basic material properties suggest that these devices can be capable of controlling large power levels, much larger than for silicon. However, these devices are in the very early stage of development, and have been demonstrated at only low power levels. Finally, the development of efficient blue light emitting diodes in the gallium nitride materials system is discussed. This resulting investment in this system may enhance the development of higher power, high temperature nitride-based devices, offering an exciting alternate to silicon carbide.

Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000136-000143
Author(s):  
Jim Richmond ◽  
Sei-Hyung Ryu ◽  
Qingchun (Jon) Zhang ◽  
Brett Hull ◽  
Mrinal Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Bipolar Junction Transistors ◽  
Power Devices ◽  
Temperature Range ◽  
Silicon Devices ◽  
Bipolar Switching ◽  
Operational Temperature ◽  
Full Benefit ◽  
High Temperature Operation

Power devices based on Silicon Carbide (SiC) have unmatched potential for extending the operational temperature range of power electronics well past what is possible with silicon devices. SiC JBS diodes are already demonstrating part of that potential but the full benefit will not be realized until a SiC power switch is available. Recently, normally off SiC unipolar and bipolar switching devices have become available with the manufacture of 1200V, 20A MOSFETs and 1200V, 20A bipolar junction transistors (BJT). While both of these device types have undergone considerable study, most of this characterization has been conducted in the normal commercial temperature range which has an upper limit of 150 – 175°C. The SiC BJT is considered to be a superior device for high temperature operation due to its lower on-state voltage and increased reliability due to it not having a gate oxide. As presented, the advantages of the SiC BJT over the SiC MOSFET are not as great as expected and may not warrant the increased complexity of dealing with the current driven base that the BJT requires. Otherwise, both devices offer exceptional performance at high temperature.

500°C Silicon Carbide MOSFET-Based Integrated Circuits

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000072-000075 ◽  
Author(s):  
Cheng-Po Chen ◽  
Reza Ghandi ◽  
Liang Yin ◽  
Xingguang Zhu ◽  
Liangchun Yu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
High Temperatures ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Ring Oscillator ◽  
Stable Operation ◽  
Cmos Inverter ◽  
Performance Change

In this work silicon carbide MOSFET based integrated circuits such as operational amplifier. 27-stage ring oscillator and CMOS-based inverter have been designed, fabricated and successfully tested at high temperatures. Silicon carbide MOSFETs remained fully operational from room temperature to 500°C with stable I-V characteristics. Also 27-stage ring oscillator, operational amplifier and CMOS inverter tested and shown to be functional up to 500°C, with relatively small performance change between 300°C and 500°C. High temperature reliability evaluation of these circuits demonstrate stable operation and both the ring oscillator and OpAmp survived more than 100 hours at 500°C.

Design and Experimental Research of a Fiber-Optic Communication Module for Well Logging

2021 ◽  
Author(s):  
Yue Wang ◽  
Bo Li ◽  
Lei Sun ◽  
Fenghuan Hao ◽  
Marvin Rourke
Keyword(s):  
High Temperature ◽  
Real Time ◽  
High Temperatures ◽  
Communication System ◽  
Fiber Optic ◽  
Well Logging ◽  
Harsh Environments ◽  
Long Distance ◽  
Fiber Optic Communication ◽  
Optic Communication

Abstract Fiber-optic transmission has been applied in oil and gas industry over the years. Compared with other methods applied in the industry, fiber-optic transmission has the advantages of low loss, long-distance, high-capacity and robust to the electromagnetic interference. The ability to provide reliable transmission systems in the harsh environments like high temperatures is the key driver for the continued use of fiber-optic communication for in-well applications. We design a fiber-optic communication system under high temperatures for well logging applications. It consists of high-temperature laser diode, high-temperature photodetector with photoelectric detection circuit, drive control circuit, and field-programmable gate array (FPGA) as the communication chip. This system ensures that data can be transmitted at a rate of 15 Mbps at temperatures up to 155°C. The FPGA board makes the system to control data transmission flexibly and enable the serial communication between the photoelectric module and the host computer. Additionally, the number of fibers used in fiber-optic communication in logging will be reduced to only a single fiber for transmitting and receiving. A series of experiments on the performance and effects of fiber-optic communication at different temperatures was carried out. Data transceiver tests and eye diagram tests are presented. The experimental results demonstrated that this fiber-optic communication system is capable of working steadily over a long period of time in harsh environments around 155°C to realize broadband and remote transmission of logging information. This system provides a way that allows optical information to transmit in a high-temperature environment. It can be applied to well logging and fiber-optic sensing (e.g., real-time environmental parameters transmission, fiber-optic well monitoring) for developing real-time, high-data-rate, bidirectional fiber-optic communication in the future.

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