Surge Driven Evolution of Schottky Barrier Height on 4H-SiC JBS Diodes
2018 ◽
Vol 924
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pp. 593-596
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Keyword(s):
In this paper we will present the results of repetitive surge stress carried out on six 3.3 kV-5A Ti/Ni 4H-SiC JBS diodes. Repetitive current peaks between 10 A and 24 A have been applied and some diodes were able to endure 100,000 cycles while others failed before. The causes of failure have not been determined but a correlation between peak surge current and physical parameters evolution rate has been proven. Simulations show that contact temperature during surge can reach 300 °C, which is very close to Schottky contact annealing temperatures.
2011 ◽
Vol 32
(5)
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pp. 620-622
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Keyword(s):
2010 ◽
Vol 645-648
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pp. 669-672
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