An Improved I-V Model of GaN HEMT for High Temperature Applications

2018 ◽  
Vol 924 ◽  
pp. 980-983
Author(s):  
Jie Yang ◽  
Ye Ting Jia ◽  
Ning Ye ◽  
Zhen Yu Yuan ◽  
Hong Yuan Shen ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Wide Temperature Range ◽  
The Self ◽  
Heating Effect ◽  
Self Heating ◽  
Spice Model ◽  
Gan Hemt ◽  
Characteristic Variation ◽  
High Temperature Condition

The lack of the high temperature I-V model greatly restricts the application of GaN HEMT devices. In this paper, the characteristic variation of GaN HEMT device under high temperature condition is investigated, and an improved I-V characteristics model of GaN HEMT transistors over a wide temperature range from 25°C to 300°C is proposed based on the classic Statz model. The experimental results indicate that the improved spice model, by taking the self-heating effect into account, is more accurate compared to the original Statz model. The proposed I-V model should be an available tool for the simulation of GaN HEMT device in designing integrated circuits at high temperature.

scholarly journals Influence of Self-Heating Effect on I-V Dates of Party Depleted Submicron Silicon-on-Insulator CMOS Transistors at High Ambient Temperatures

2019 ◽  
Vol 9 (1) ◽  
pp. 1446-1450
Keyword(s):  
High Temperature ◽  
Ambient Temperature ◽  
Silicon On Insulator ◽  
The Self ◽  
Heating Effect ◽  
Self Heating ◽  
Cmos Transistors ◽  
Cmos Transistor ◽  
Supply Voltages ◽  
Soi Cmos

To solve the problems of high temperature microelectronics the influence of the self heating effect on the IV dates partially depleted submicron silicon–on-insulator CMOS transistor in the ambient temperature range from 525 K to 650 K is discussed. Approach consists in combination of experimental data and of computational simulating results. For simulation of electrothermal characteristics of SOI CMOS transistor is considered three-layered structure. Temperature distribution is calculated numerically using iterative algorithm in conjunction with software COMSOL Multiphysics. I-V dates of SOI CMOS transistors are calculated by means of two-dimensional models for n-and p-channel transistors of Sentaurus TCAD developed in the system of instrument and technological modelling. TCAD models are calibrated on experimental characteristics for 525 K. It is shown that with growth of ambient temperature the selfheating mechanism contribution consistently decreases. By results of modeling it is established that self-heating contributions at supply voltages 5.5 V to decreases for ntransistor in 2.8 times, p-transistor in 2.2 times. The relative decline of current n-type transistor for reduced from 11.6% to 5.5% and for p-type with 15% to 9%. However, different dynamics of current recession for n-and p-transistors is significant for analog applications that need to be considered at high-temperature circuit design. The proposed methodology allows to critically assess the contribution of the self-heating mechanism on the I-V dates for a wide range of high temperatures and supply voltages. Underestimating this fact leads to unreasonable values for the maximum temperature and limit of thermal stability for the separate SOI CMOS transistor. In total this can be a prerequisite for a significant simplification of the design of not only the chip construction but also the whole electronic Board.

scholarly journals Criticality of the Self-Heating Effect in Polymers and Polymer Matrix Composites during Fatigue, and Their Application in Non-Destructive Testing

Polymers ◽  
2018 ◽  
Vol 11 (1) ◽  
pp. 19 ◽  
Author(s):  
Andrzej Katunin
Keyword(s):  
Polymer Matrix ◽  
Polymer Matrix Composites ◽  
The Self ◽  
Matrix Composites ◽  
Heating Effect ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Structural Degradation ◽  
Self Heating ◽  
Non Destructive

The self-heating effect is a dangerous phenomenon that occurs in polymers and polymer matrix composites during their cyclic loading, and may significantly influence structural degradation and durability as a consequence. Therefore, an analysis of its criticality is highly demanding, due to the wide occurrence of this effect, both in laboratory fatigue tests, as well as in engineering practice. In order to overcome the problem of the accelerated degradation of polymer matrix structures, it is essential to evaluate the characteristic temperature values of self-heating, which are critical from the point of view of the fatigue life of these structures, i.e., the temperature at which damage initiates, and the safe temperature range in which these structures can be safely maintained. The experimental studies performed were focused on the determination of the critical self-heating temperature, using various approaches and measurement techniques. This paper present an overview of the research studies performed in the field of structural degradation, due to self-heating, and summarizes the studies performed on the evaluation of the criticality of the self-heating effect. Moreover, the non-destructive testing method, which uses the self-heating effect as a thermal excitation source, is discussed, and the non-destructivity of this method is confirmed by experimental results.

Effect of minerals on the self-heating retorting of oil shale: Self-heating effect and shale-oil production

Fuel ◽  
2014 ◽  
Vol 118 ◽  
pp. 186-193 ◽  
Author(s):  
Hongfan Guo ◽  
Jiadong Lin ◽  
Yindong Yang ◽  
Yunyi Liu
Keyword(s):  
Oil Shale ◽  
Oil Production ◽  
The Self ◽  
Shale Oil ◽  
Heating Effect ◽  
Self Heating

scholarly journals Rapid determination of the high cycle fatigue properties of high temperature aeronautical alloys by self-heating measurements

2018 ◽  
Vol 165 ◽  
pp. 22022
Author(s):  
Vincent Roué ◽  
Cédric Doudard ◽  
Sylvain Calloch ◽  
Frédéric Montel ◽  
Quentin Pujol D’Andrebo ◽  
...  
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
High Cycle Fatigue ◽  
Rapid Determination ◽  
The Self ◽  
Fatigue Properties ◽  
Cycle Fatigue ◽  
Heating Method ◽  
Self Heating

The determination of high cycle fatigue (HCF) properties of a material with standard method requires a lot of specimens, and could be really time consuming. The self-heating method has been developed in order to predict S–N–P curves (i.e., amplitude stress – number of cycles to failure – probability of failure) with only a few specimens. So the time-saving advantage of this method has been demonstrated on several materials, at room temperature. In order to reduce the cost and time of fatigue characterization at high temperature, the self-heating method is adapted to characterize HCF properties of a titanium alloy, the Ti-6Al-4V (TA6V), at different temperatures. So the self-heating procedure is adjusted to conduct tests with a furnace. Two dissipative phenomena can be observed on self-heating curves. Because of this, a two-scale probabilistic model with two dissipative mechanisms is used to describe them. The first one is observed for low amplitudes of cyclic loading, under the fatigue limit, and the second one for higher amplitudes where the mechanisms of fatigue damage are activated and are dissipating more energy. This model was developed on steel at room temperature. Even so, it is used to describe the self-heating curves of the TA6V at several temperatures.

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