Sub-nm-Scale Depth Profiling of Nitrogen in NO- and N2-Annealed SiO2/4H-SiC(0001) Structures

We demonstrated an x-ray photoelectron spectroscopy (XPS)-based technique to reveal the detailed nitrogen profile in nitrided SiO2/4H-SiC structures with sub-nanometer-scale-resolution. In this work, nitric oxide (NO)- and pure nitrogen (N2)-annealed SiO2/4H-SiC(0001) structures were characterized. The measured results of NO-annealed samples with various annealing duration indicate that preferential nitridation just at the SiO2/SiC interfaces (~0.3 nm) proceeds in the initial stage of NO annealing and a longer duration leads to the distribution of nitrogen in the bulk SiO2 within few nanometers of the interface. The high-temperature N2 annealing was found to induce not only SiO2/SiC interface nitridation similarly to NO annealing but also SiO2 surface nitridation.

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Profiling of the SiO2 - SiC Interface Using X-ray Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-640-h3.7 ◽

2000 ◽

Vol 640 ◽

Cited By ~ 1

Author(s):

R. N. Ghosh ◽

S. Ezhilvalavan ◽

B. Golding ◽

S. M. Mukhopadhyay ◽

N. Mahadev ◽

...

Keyword(s):

High Temperature ◽

Photoelectron Spectroscopy ◽

Field Effect ◽

Depth Profiling ◽

Interfacial Region ◽

Thermally Grown Oxides ◽

X Ray ◽

Spatially Resolved ◽

Graphitic Layer ◽

Field Effect Devices

ABSTRACTThe implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO2/SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle ∼ 1×10−4 rad) that provides access to the SiO2/SiC interface via a surface sensitive probe such as xray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

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Interaction of nitric oxide with Ru(II) complexes of deuteroporphyrindimethylester derivatives

Journal of Porphyrins and Phthalocyanines ◽

10.1142/s1088424609000188 ◽

2009 ◽

Vol 13 (01) ◽

pp. 35-40 ◽

Cited By ~ 2

Author(s):

Rudy Martin ◽

Roberto Cao ◽

Ana M. Esteva ◽

Franz-Peter Montforts

Keyword(s):

Nitric Oxide ◽

Photoelectron Spectroscopy ◽

Gold Electrode ◽

Charge Transfer Band ◽

Bathochromic Shift ◽

Considerable Change ◽

Cathodic Peak ◽

X Ray ◽

Polycrystalline Gold ◽

Self Assembled

A new ruthenium(II) porphyrin disulphide derivative, [ Ru ( Pds )( CO )], was obtained from ruthenium(II)(carbonyl)deuteroporphyrin(IX), [ Ru ( DPdc )( CO )] and cystamine. The interaction of this complex with nitric oxide was studied spectrophotometrically and a bathochromic shift of the charge transfer band and considerable change in the α and β bands of the complex were observed. According to the IR spectrum, the product of this interaction is [ Ru ( DmDP )( NO +)( NO 2-)]. [ Ru ( Pds )( CO )] was then self-assembled on polycrystalline gold and characterized by X-ray photoelectron spectroscopy. [ Ru ( Pds )( CO )] was also self-assembled on gold electrode beads and its interaction with nitric oxide in aqueous solution was studied by cyclic voltammetry. A shift in the ruthenium redox process and a new irreversible cathodic peak at -0.59 V were observed, both indicating coordination of NO .

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Oxidation of Si(100) in nitric oxide at low pressures: An x-ray photoelectron spectroscopy study

Applied Physics Letters ◽

10.1063/1.119307 ◽

1997 ◽

Vol 70 (1) ◽

pp. 63-65 ◽

Cited By ~ 44

Author(s):

A. Kamath ◽

D. L. Kwong ◽

Y. M. Sun ◽

P. M. Blass ◽

S. Whaley ◽

...

Keyword(s):

Nitric Oxide ◽

Photoelectron Spectroscopy ◽

Spectroscopy Study ◽

X Ray ◽

Low Pressures

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Formation of GaN Self-Organized Nanotips by Nanomasking Effect

MRS Proceedings ◽

10.1557/proc-707-i3.52.1 ◽

2001 ◽

Vol 707 ◽

Author(s):

Harumasa Yoshida ◽

Tatsuhiro Urushido ◽

Hideto Miyake ◽

Kazumasa Hiramtsu

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Aspect Ratio ◽

Formation Mechanism ◽

High Aspect Ratio ◽

Photoelectron Spectroscopy ◽

Nanometer Scale ◽

Xps Analysis ◽

X Ray ◽

Self Organized

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

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Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-567-51 ◽

1999 ◽

Vol 567 ◽

Cited By ~ 1

Author(s):

Masayuki Suzuki ◽

Yoji Saito

Keyword(s):

Photoelectron Spectroscopy ◽

High Vacuum ◽

Oxide Films ◽

Silicon Surfaces ◽

Gaseous Mixtures ◽

X Ray ◽

Initial Stage ◽

Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

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Xps Analysis of the Sapphire Surface as a Function of High Temperature Vacuum Annealing

MRS Proceedings ◽

10.1557/proc-159-253 ◽

1989 ◽

Vol 159 ◽

Cited By ~ 5

Author(s):

E.D. Richmond

Keyword(s):

High Temperature ◽

Binding Energy ◽

Photoelectron Spectroscopy ◽

Vacuum Annealing ◽

Xps Analysis ◽

Chemical Changes ◽

Cleaning Procedure ◽

Sapphire Surface ◽

X Ray ◽

First Time

ABSTRACTFor the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.

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Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

Applied Spectroscopy ◽

10.1366/000370278774331468 ◽

1978 ◽

Vol 32 (2) ◽

pp. 175-177 ◽

Cited By ~ 12

Author(s):

L. Bradley ◽

Y. M. Bosworth ◽

D. Briggs ◽

V. A. Gibson ◽

R. J. Oldman ◽

...

Keyword(s):

Chemical Analysis ◽

Auger Electron Spectroscopy ◽

Photoelectron Spectroscopy ◽

Electron Spectroscopy ◽

Auger Electron ◽

Depth Profiling ◽

Ion Source ◽

X Ray ◽

Nitride Oxide ◽

Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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Carbon monoxide oxidation by nitric oxide on iridium (111) studied by x-ray and uv-photoelectron spectroscopy

Applications of Surface Science ◽

10.1016/0378-5963(77)90004-6 ◽

1977 ◽

Vol 1 (1) ◽

pp. 25-32 ◽

Cited By ~ 28

Author(s):

P.A. Zhdan ◽

G.K. Boreskov ◽

A.I. Boronin ◽

A.P. Schepelin ◽

W.F. Egelhoff ◽

...

Keyword(s):

Nitric Oxide ◽

Carbon Monoxide ◽

Photoelectron Spectroscopy ◽

Carbon Monoxide Oxidation ◽

X Ray ◽

Uv Photoelectron Spectroscopy

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CVD Boron Carbo-Nitride as Pore Sealant for Ultra Low-K Interlayer Dielectrics

MRS Proceedings ◽

10.1557/proc-863-b6.8 ◽

2005 ◽

Vol 863 ◽

Cited By ~ 1

Author(s):

P. Ryan Fitzpatrick ◽

Sri Satyanarayana ◽

Yangming Sun ◽

John M. White ◽

John G. Ekerdt

Keyword(s):

Photoelectron Spectroscopy ◽

Depth Profiling ◽

Chemical Vapor ◽

K Value ◽

X Ray ◽

Dimethylamine Borane ◽

The Stability ◽

Low K ◽

Secondary Ion ◽

Sims Depth Profiling

AbstractBlanket porous methyl silsesquioxane (pMSQ) films on a Si substrate were studied with the intent to seal the pores and prevent penetration of a metallic precursor during barrier deposition. The blanket pMSQ films studied were approximately 220 nm thick and had been etched and ashed. When tantalum pentafluoride (TaF5) is exposed to an unsealed pMSQ sample, X-ray photoelectron spectroscopy (XPS) depth profiling and secondary ion mass spectroscopy (SIMS) depth profiling reveal penetration of Ta into the pores all the way to the pMSQ / Si interface. Boron carbo-nitride films were grown by thermal chemical vapor deposition (CVD) using dimethylamine borane (DMAB) precursor with Ar carrier gas and C2H4 coreactant. These films had a stoichiometry of BC0.9N0.07 and have been shown in a previous study to have a k value as low as 3.8. BC0.9N0.07 films ranging from 1.8 to 40.6 nm were deposited on pMSQ and then exposed to TaF5 gas to determine the extent of Ta penetration into the pMSQ. Ta penetration was determined by XPS depth profiling and sometimes SIMS depth profiling. XPS depth profiling of a TaF5 / 6.3 nm BC0.9N0.07 / pMSQ / Si film stack indicates the attenuation of the Ta signal to < 2 at. % throughout the pMSQ. Backside SIMS of this sample suggests that trace amounts of Ta (< 2 at. %) are due to knock-in by Ar ions used for sputtering. An identical film stack containing 3.9 nm BC0.9N0.07 was also successful at inhibiting Ta penetration even with a 370°C post-TaF5 exposure anneal, suggesting the stability of BC0.9N0.07 to thermal diffusion of Ta. All BC0.9N0.07 films thicker than and including 3.9 nm prevented Ta from penetrating into the pMSQ.

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