Electrodeposition of CuI Thin Film for Perovskite Solar Cells

The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of-0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.

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Impact of K+ Doping on Modulating Majority Charge Carrier Type and Quality of Perovskite Thin Films by Two-step Solution Method for Solar Cells

Coatings ◽

10.3390/coatings9100647 ◽

2019 ◽

Vol 9 (10) ◽

pp. 647 ◽

Cited By ~ 1

Author(s):

Yujun Yao ◽

Xiaoping Zou ◽

Jin Cheng ◽

Tao Ling ◽

Chuangchuang Chang ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Charge Carrier ◽

Physical Properties ◽

Perovskite Solar Cells ◽

Tio2 Layer ◽

Perovskite Layer ◽

Majority Charge Carrier ◽

Majority Carrier

Traditional hetero-junction perovskite solar cells are composed of light-absorbing layers, charge carrier-transporting layers, and electrodes. Recently, a few papers on homo-junction perovskite solar cells have been studied. Here, we studied the effect of K+ doping on TiO2/PbI2 interface quality, perovskite film morphology, photo-physical properties, and majority carrier type. In particular, the K+ extrinsic doping can modulate the majority carrier type of the perovskite thin film. The study indicated that the interface between the perovskite layer and the TiO2 layer deteriorates with the increase of K+ doping concentration, affecting the electron transport ability from the perovskite film to the TiO2 layer and the photo-physical properties of the perovskite layer by K+ doping. In addition, the majority charge carrier type of perovskite thin films can be changed from n-type to p-type after K+ extrinsic doping, and the corresponding hole concentration increased to 1012 cm−3. This approach of modulating the majority charge carrier type of perovskite thin film will pave the way for the investigation of perovskite homo-junction by extrinsic doping for solar cells.

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Combustion Processed Nickel Oxide and Zinc Doped Nickel Oxide Thin Films as a Hole Transport Layer for Perovskite Solar Cells

Coatings ◽

10.3390/coatings11060627 ◽

2021 ◽

Vol 11 (6) ◽

pp. 627

Author(s):

Ponmudi Selvan Thiruchelvan ◽

Chien-Chih Lai ◽

Chih-Hung Tsai

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Nickel Oxide ◽

Perovskite Solar Cells ◽

Combustion Process ◽

Hole Transport ◽

Transport Layer ◽

Hole Transport Layer ◽

X Ray

Combustion processed nickel oxide (NiOx) thin film is considered as an alternative to the sol-gel processed hole transport layer for perovskite solar cells (PSCs). In this paper, NiOx thin film was prepared by the solution–combustion process at 250 °C, a temperature lower than the actual reaction temperature. Furthermore, the properties of the NiOx hole transport layer (HTL) in PSCs were enhanced by the incorporation of zinc (Zn) in NiOx thin films. X-ray diffraction and X-ray photoelectron spectroscopy results revealed that the formation of NiOx was achieved at lower annealing temperature, which confirms the process of the combustion reaction. The electrical conductivity was greatly improved with Zn doping into the NiOx crystal lattice. Better photoluminescence (PL) quenching, and low PL lifetime decay were responsible for better charge separation in 5% Zn doped NiOx, which results in improved device performance of PSCs. The maximum power conversion efficiency of inverted PSCs made with pristine NiOx and 5% Zn-NiOx as the HTL was 13.62% and 14.87%, respectively. Both the devices exhibited better stability than the PEDOT:PSS (control) device in an ambient condition.

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Inorganic and Lead-free CsBi3I10 Thin Film Solar cell Prepared by Single-source Thermal Evaporation

10.21203/rs.3.rs-201822/v1 ◽

2021 ◽

Author(s):

Huabin Lan ◽

Xingye Chen ◽

Ping Fan ◽

Guangxing Liang

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Band Gap ◽

Thermal Evaporation ◽

Perovskite Solar Cells ◽

Lead Free ◽

Single Source ◽

Thermal Evaporation Method ◽

Inorganic Lead

Abstract All inorganic lead-free halide perovskites have attracted much attention due to their non-toxic and good band gap. In this paper, we first prepared all inorganic lead-free perovskite CsBi3I10 thin films by single source thermal evaporation deposition. The results show that CsBi3I10 thin films prepared by single source thermal evaporation have layered structure, high purity hexagonal phase and high crystallinity, which are consistent with the theoretical calculation results. The surface of the thin film was compact and uniform, and had high homology with the crystal structure of the evaporation source material. After annealing, the crystallinity of the film was further improved. The band gap of the CsBi3I10 thin film calculated was 1.83 eV, Perovskite solar cells based on CsBi3I10 thin films exhibit an efficiency of up to 0.84%. These results indicate that the proposed single source thermal evaporation method has the potential to prepare high efficiency inorganic lead-free perovskite solar cells.

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Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques

Materials Science Forum ◽

10.4028/www.scientific.net/msf.561-565.1201 ◽

2007 ◽

Vol 561-565 ◽

pp. 1201-1204

Author(s):

Ji Cheng Zhou ◽

Jian Wu Yan

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Face Centered Cubic ◽

Temperature Coefficient Of Resistance ◽

Sputtering Power ◽

Polycrystalline Microstructure ◽

Face Centered ◽

Cr Film ◽

Resistance Value

The nano Ni-Cr thin-film samples with different composition have been fabricated by a double-target magnetron co-sputtering equipment, through controlling the sputtering power, the substrate rotate speed, and the substrate temperature, The results showed that the grains sizes with polycrystalline microstructure were not greater than 10 nm. The crystal microstructure of Ni-Cr thin-films is Face Centered Cubic (FCC). The dominant texture in the Ni-Cr film was Ni (111) under this sputtering condition. The lattice parameters of Ni crystal and the inter-planar distances of Ni (111) increased by Cr solid-soluble in Ni crystal. The surface morphology of the thin-film samples is smooth and compact. The TCR (temperature coefficient of resistance) value of specimen 3 was 84~130 ppm/k, which show the specimen 3 was the most stable.

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Structures and Properties of C60 & C70 Thin Films Fabricated by Organic MBE

MRS Proceedings ◽

10.1557/proc-247-321 ◽

1992 ◽

Vol 247 ◽

Cited By ~ 4

Author(s):

K. Tanigaki ◽

T. Ichihsdhi ◽

T. W. Ebbesen ◽

S. Kuroshima ◽

S. Iijima ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Alkali Halide ◽

Molecular Motion ◽

Face Centered Cubic ◽

Reversible Change ◽

Structures And Properties ◽

The Face ◽

Face Centered ◽

Substrate Temperatures

ABSTRACTThe C60/C70 thin film crystals have been fabricated on the (001) surface of alkali halide substrates, KC1, KBr, and NaCl, and their structures have been studied. The crystal structure analyses by TEM show that the hexagonal closed packing (hep) with lattice parameters of a=10.0 Å and c=16.3 Å and the face-centered cubic (fee) with a=14.2 Å coexist in the C60 thin film crystals. The C70 thin film crystals show an expanded lattice constant of a=10.5 Å from the view perpendicular to the stacking plane. The ratio of hep to fee is dependent on the kind of the substrates and on the substrate temperatures during the crystal growth. The observed reversible change in the Raman spectrum of the C60 thin films implies a rotational molecular motion in the thin film crystals.

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Electron diffraction detection of ordliking in annealed PbTe thin film

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100178227 ◽

1990 ◽

Vol 48 (4) ◽

pp. 1018-1019

Author(s):

Karimat El-Sayed

Keyword(s):

Thin Film ◽

Electron Diffraction ◽

Lead Telluride ◽

Structural Basis ◽

Face Centered Cubic ◽

X Ray ◽

Polycrystalline Thin Films ◽

Stage Process ◽

Diffraction Patterns ◽

Face Centered

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :

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A thiourea additive-based quadruple cation lead halide perovskite with an ultra-large grain size for efficient perovskite solar cells

Nanoscale ◽

10.1039/c9nr07377a ◽

2019 ◽

Vol 11 (45) ◽

pp. 21824-21833 ◽

Cited By ~ 9

Author(s):

Jyoti V. Patil ◽

Sawanta S. Mali ◽

Chang Kook Hong

Keyword(s):

Thin Films ◽

Grain Size ◽

Solar Cells ◽

Power Conversion Efficiency ◽

Conversion Efficiency ◽

Power Conversion ◽

Perovskite Solar Cells ◽

Inorganic Perovskite ◽

Halide Perovskite ◽

Lead Halide

Controlling the grain size of the organic–inorganic perovskite thin films using thiourea additives now crossing 2 μm size with >20% power conversion efficiency.

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NICROFER 5923 HMo-ALLOY 59

Alloy Digest ◽

10.31399/asm.ad.ni0430 ◽

1993 ◽

Vol 42 (5) ◽

Keyword(s):

Corrosion Resistance ◽

High Temperature ◽

Physical Properties ◽

Heat Treating ◽

Face Centered Cubic ◽

Low Carbon ◽

High Alloy ◽

Temperature Performance ◽

Cubic Structure ◽

Face Centered

Abstract NICROFER 5923 hMo, often called Alloy 59, was developed with extra low carbon and silicon contents and with a high alloy level of molybdenum to optimize its corrosion resistance. Nicrofer 5923hMo has a face-centered cubic structure. This datasheet provides information on composition, physical properties, elasticity, and tensile properties. It also includes information on high temperature performance as well as forming, heat treating, and joining. Filing Code: Ni-430. Producer or source: VDM Technologies Corporation.

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