Microstructure and Electrical Properties of Nano Ni-Cr Thin-Films Fabricated by Magnetron Co-Sputtering Techniques

2007 ◽  
Vol 561-565 ◽  
pp. 1201-1204
Author(s):  
Ji Cheng Zhou ◽  
Jian Wu Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Face Centered Cubic ◽  
Temperature Coefficient Of Resistance ◽  
Sputtering Power ◽  
Polycrystalline Microstructure ◽  
Face Centered ◽  
Cr Film ◽  
Resistance Value

The nano Ni-Cr thin-film samples with different composition have been fabricated by a double-target magnetron co-sputtering equipment, through controlling the sputtering power, the substrate rotate speed, and the substrate temperature, The results showed that the grains sizes with polycrystalline microstructure were not greater than 10 nm. The crystal microstructure of Ni-Cr thin-films is Face Centered Cubic (FCC). The dominant texture in the Ni-Cr film was Ni (111) under this sputtering condition. The lattice parameters of Ni crystal and the inter-planar distances of Ni (111) increased by Cr solid-soluble in Ni crystal. The surface morphology of the thin-film samples is smooth and compact. The TCR (temperature coefficient of resistance) value of specimen 3 was 84~130 ppm/k, which show the specimen 3 was the most stable.

Electrodeposition of CuI Thin Film for Perovskite Solar Cells

2020 ◽  
Vol 979 ◽  
pp. 180-184
Author(s):  
I. Karuppusamy ◽  
K. Ramachandran ◽  
S. Karuppuchamy
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Applied Voltage ◽  
Perovskite Solar Cells ◽  
Face Centered Cubic ◽  
Applied Potential ◽  
Cathodic Electrodeposition ◽  
Cubic Structure ◽  
Face Centered

The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of-0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.

THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING

2007 ◽  
Vol 21 (26) ◽  
pp. 4561-4574 ◽  
Author(s):  
JIANWU YAN ◽  
JICHENG ZHOU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Electron Spectroscopy ◽  
Thermal Process ◽  
Auger Electron ◽  
Rapid Thermal Process ◽  
X Ray ◽  
Sputtering Power ◽  
Resistance Stability

By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni – Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni – Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni – Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni – Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni – Cr thin films were discussed.

COMPOSITION CONTROL AND ITS ELECTRICAL PROPERTIES OF TaNx THIN FILMS

2010 ◽  
Vol 24 (09) ◽  
pp. 905-910 ◽  
Author(s):  
H. C. JIANG ◽  
C. J. WANG ◽  
W. L. ZHANG ◽  
X. SI
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sheet Resistance ◽  
Face Centered Cubic ◽  
Body Centered Cubic ◽  
Composition Control ◽  
Number Ratio ◽  
Dc Reactive Magnetron Sputtering ◽  
Face Centered ◽  
Nitrogen Contents

TaN thin films were deposited on Al 2 O 3 wafers by DC reactive magnetron sputtering. The composition control by nitrogen partial flux in the working gas and the electrical properties of the samples were investigated in detail. The results show that the atomic number ratio of Ta to N in the samples can be adjusted from 4 to 0.88, corresponding to the contents of N in the samples from 20 at.% to 53 at.%, by adjusting the nitrogen partial flux from 2% to 6%. The main phases in the TaN x thin films are hexagonal Ta 2 N , body centered cubic Ta 10 N and face centered cubic TaN at lower N contents (lower than 28 at.%). However, at higher N contents (higher than 28 at.%), orthorhombic Ta 3 N 5 phase gradually precipitates out from the samples, and the hexagonal Ta 2 N phase disappears. When the N contents in the samples are lower than 28 at.%, the sheet resistance and resistivity of TaN x thin films are all low. With further increase of the N contents, the sheet resistance and resistivity of TaN x thin films increase sharply. The sheet resistance and the resistivity of the samples can be adjusted from 17 Ω/sq. to 77 Ω/sq., from 344 μΩ ·cm to 1030 μΩ ·cm by adjusting the nitrogen contents, respectively. When the nitrogen contents in the samples are lower than 28 at.%, the TCR of the samples is less than 50 ppm/°C. With further increase of N contents, the TCR of the samples increases sharply up to a few hundred ppm/°C.

Preparation and Conductive Properties of Ag Thin Film by DC Magnetron Sputtering Method

2012 ◽  
Vol 217-219 ◽  
pp. 1068-1072
Author(s):  
Jian Guang Lin ◽  
Wei Xiang Weng ◽  
Wei Hui Huang ◽  
Hai Fang Zhou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Float Glass ◽  
Dc Magnetron Sputtering ◽  
Optimum Parameters ◽  
Sputtering Power ◽  
Sputtering Pressure

Ag thin films were prepared on the float-glass substrate by DC magnetron sputtering method. The relationship of surface morphology/electrical properties with technical conditions was investigated. The experimental results showed that sputtering power, sputtering pressure and substrate temperature had effects on the morphology and electrical properties of Ag thin films. The optimum parameters were obtained with sputtering power of 100 W，sputtering pressure of 0.4 Pa and substrate temperature of 130 °C. Under the optimum parameters, the deposited Ag thin film was smooth and its resistivity was as low as 1.96×10-8 Ω•m.

Structures and Properties of C60 & C70 Thin Films Fabricated by Organic MBE

1992 ◽  
Vol 247 ◽  
Author(s):  
K. Tanigaki ◽  
T. Ichihsdhi ◽  
T. W. Ebbesen ◽  
S. Kuroshima ◽  
S. Iijima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Alkali Halide ◽  
Molecular Motion ◽  
Face Centered Cubic ◽  
Reversible Change ◽  
Structures And Properties ◽  
The Face ◽  
Face Centered ◽  
Substrate Temperatures

ABSTRACTThe C60/C70 thin film crystals have been fabricated on the (001) surface of alkali halide substrates, KC1, KBr, and NaCl, and their structures have been studied. The crystal structure analyses by TEM show that the hexagonal closed packing (hep) with lattice parameters of a=10.0 Å and c=16.3 Å and the face-centered cubic (fee) with a=14.2 Å coexist in the C60 thin film crystals. The C70 thin film crystals show an expanded lattice constant of a=10.5 Å from the view perpendicular to the stacking plane. The ratio of hep to fee is dependent on the kind of the substrates and on the substrate temperatures during the crystal growth. The observed reversible change in the Raman spectrum of the C60 thin films implies a rotational molecular motion in the thin film crystals.

scholarly journals Effects of varying laser trimming geometries on thin film resistors

Circuit World ◽  
2017 ◽  
Vol 43 (1) ◽  
pp. 27-31
Author(s):  
Maria Alafogianni ◽  
Martin Birkett ◽  
Roger Penlington
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computer Simulation ◽  
Design Methodology ◽  
Performance Parameters ◽  
Temperature Coefficient Of Resistance ◽  
Content Type ◽  
Thin Film Resistors ◽  
Resistance Value ◽  
Modelling Process

Purpose This paper aims to study the effects of varying laser trim patterns on several performance parameters of thin film resistors such as the temperature coefficient of resistance (TCR) and target resistance value. Design/methodology/approach The benefits and limitations of basic trim patterns are taken into consideration, and the plunge cut, double plunge cut and the curved L-cut were selected to be modelled and tested experimentally. A computer simulation of the laser trim patterns has been developed for the modelling process of the resistors. The influence of the trim length and resistor dimensions on the TCR performance and resistance value of the resistors is investigated. Findings It is found that variation in trim length, within the range of 5 to 15 mm, can give significant increases in the TCR of the thin films. Thus, for the plunge cut, TCR can reach up to 11.51 ppm/oC, for the double plunge cut up to 14.34 ppm/oC and for the curved L-cut up to 5.11 ppm/oC. Originality/value Research on the effects of various laser trimming geometries on the TCR and target resistance accuracy is limited, especially for patterns such as the curved L-cut, which is investigated in this paper.

Electron diffraction detection of ordliking in annealed PbTe thin film

1990 ◽  
Vol 48 (4) ◽  
pp. 1018-1019
Author(s):  
Karimat El-Sayed
Keyword(s):  
Thin Film ◽  
Electron Diffraction ◽  
Lead Telluride ◽  
Structural Basis ◽  
Face Centered Cubic ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Stage Process ◽  
Diffraction Patterns ◽  
Face Centered

Lead telluride is an important semiconductor of many applications. Many Investigators showed that there are anamolous descripancies in most of the electrophysical properties of PbTe polycrystalline thin films on annealing. X-Ray and electron diffraction studies are being undertaken in the present work in order to explain the cause of this anamolous behaviour.Figures 1-3 show the electron diffraction of the unheated, heated in air at 100°C and heated in air at 250°C respectively of a 300°A polycrystalline PbTe thin film. It can be seen that Fig. 1 is a typical [100] projection of a face centered cubic with unmixed (hkl) indices. Fig. 2 shows the appearance of faint superlattice reflections having mixed (hkl) indices. Fig. 3 shows the disappearance of thf superlattice reflections and the appearance of polycrystalline PbO phase superimposed on the [l00] PbTe diffraction patterns. The mechanism of this three stage process can be explained on structural basis as follows :

scholarly journals Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 766
Author(s):  
Tihomir Car ◽  
Ivan Jakovac ◽  
Ivana Šarić ◽  
Sigrid Bernstorff ◽  
Maja Micetic
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Au Nanoparticle ◽  
Content Increase ◽  
Optical And Electrical Properties ◽  
Volume Percentage ◽  
Sputtering Deposition ◽  
Nanoparticle Formation ◽  
Al Content ◽  
Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

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